1. Korean Patent Application filed 10-2022-0094203 “3진 신경망 가속기 소자 및 그 동작 방법” July 28, 2022.

2. Korean Patent Application filed 10-2021-0155661 “TCAM 소자 및 그 동작 방법” November 12, 2021.

3. Korean Patent Application filed 10-2021-0154777 “강유전체 메모리 소자 및 그 제조 방법” November 11, 2021.

4. Korean Patent Application filed 10-2021-0114033 “강유전체 메모리 소자 및 그 제조 방법” August 27, 2021.

5. Korean Patent Application filed 10-2021-0099069 “낸드 플래시 메모리 소자의 동작 방법” July 28, 2021.

6. Korean Patent Application filed 10-2021-0099068 “강유전체 메모리 소자 및 그 제조 방법” July 8, 2021.

7. Korean Patent Application No. 10-2368866 “Ferroelectric Memory Device and Method of Fabricating the same” February 24, 2022.

8. Korean Patent Application No. 10-2353462 “Ternary Inverter Device” January 17, 2022.

9. Korean Patent Application No. 10-2016-0159881 “Tunneling Field Effect Transistor (TFET) based Sensor with Multi Dielectric Gate Stack and Method of Fabricating the same” November 29, 2016.

10. Korean Patent Application No. 10-1657988 “MULTIPLEXED TUNNEL FIELD-EFFECT TRANSISTOR BIOSENSOR” October 9, 2016.

11. Korean Patent Application No. 10-1658037 “Method of Driving Active Display Device” October 9, 2016.

12. Korean Patent Application filed 10-2016-0031861 “Semiconductor Device with Air-Gap Underneath the Active Region and its Fabrication Method” March 17, 2016.

13. Korean Patent Application filed 10-2016-0031860 “Tunnel Field-Effect Transistor (TFET) with Asymmetric Channel and Gate Dielectric” March 17, 2016.

14. Korean Patent Application filed 10-2015-0160049 “Method of Initializing 3 Dimensional Non-Volatile Memory Device” November 14, 2015.

15. Korean Patent Application filed 10-2015-0155418 “Method of Initializing and Programing 3 Dimensional Non-Volatile Memory Device” November 5, 2015.

16. Korean Patent Application filed 10-2015-0154161 “Method of Initializing and Programing 3 Dimensional Non-Volatile Memory Device” November 3, 2015.

17. Korean Patent Application filed 10-2015-0018348 “TUNNEL FIELD-EFFECT TRANSISTOR WITH RAISED DRAIN REGION” February 6, 2015.

18. Korean Patent Application No.10-1195544 “FABRICATION METHOD OF THIN FILM TRANSISTOR WITH ROUNDED GATE,” October 23, 2012.

19. Korean Patent Application No. 10-1113885 “TWO BIT RRAM USING INVERTED STAGGERED THIN FILM TRANSISTOR STRUCTURE,” February 1, 2012.

20. Korean Patent Application filed 10-2010-0099542 “Transistors and Electronic Devices including the same,” October 12, 2010.

1. United States Patent No. 9947413B2, entitled “Method of Initializing and Programing 3D Non-Volatile Memory Device,” filed April 17, 2018.

2. United States Patent No. 10074435B2, entitled “Method of Initializing and Programing 3D Non-Volatile Memory Device,” filed September 11, 2018.

3. United States Patent No. 9685235B2, entitled “Method of Initializing and Driving 3D Non-Volatile Memory Device Using Time Varying Erase Signal,” filed September 5, 2017.

4. United States Patent No. 9824759B2, entitled “Non-Volatile Memory Devices, Memory Systems, and Methods of Operating the same” filed January 29, 2015.

5. United States Patent No. 9123817B2, entitled “Transistors and Electronic Devices including the same,” filed September 1, 2015.

6. United States Patent No. 9105235B2, entitled “Methods of Driving Active Display Device,” filed August 11, 2015.