INFRASTRUCTURE
Faculty in-charge : Dr. Anuradha M. Ashok
HRTEM Facility : JEOL JEM 2100 http://www.psgias.ac.in/facilities.html
SEM Facility : ZEISS EVO 18 http://www.psgias.ac.in/facilities.html
XRD Facility : PANALYTICAL EMPYREAN http://www.psgias.ac.in/facilities.html
The sample holder uses a unique balance contact mechanism, permitting measurement of high reproducibility. V-I plot measurement can be made to judge if the lead is in intimate contact with a set sample. The system automatically examines whether the contact of the probes with a sample ohmic or not, and finds and uses the best value of electric current to determine the resistivity of the sample without influence of heat transfer.Measurement is controlled by a computer, permitting automatic measurement with each temperature difference at a specified temperature and elimination of dark electromotive force.
Measurement technique Seebeck Coefficient : Static DC method
Electric Resistance : Four- Probe method
Seebeck Measurement System
Simultaneous Seebeck coefficient and electrical conductivity measurement System
Sample size : 2 to 4 mm square or diameter ~ 5 to 22 mm long
Measurement : It can measure a wide range of samples including semiconductors, oxides and metals
Temperature range : 50 deg C to 1000 deg C.
Simultaneous Thermal Analysis generally refers to the simultaneous application of Thermogravimetry (TGA) and Differential Scanning Calorimetry (DSC) to one and the same sample in a single instrument. The advantages of the instrument are: The test conditions are perfectly identical for the TGA and DSC signals (same atmosphere, gas flow rate, vapor pressure on the sample, heating rate, thermal contact to the sample crucible and sensor, radiation effect, etc.).
Simultaneous Thermal analyzer
Instrument : STA449 F3 Jupiter from Netzsch, Germany
Sample quantity : 5 mg
Atmosphere : Nitrogen, Air, Argon
Heat ramp : 20 K/min
Temperature : Upto 773 K (Aluminium crucible), 1473 K (Alumina crucible)
TGA : mass changes, temperature stability, oxidation/reduction behavior, decomposition, corrosion studies, compositional analysis and thermokinetics.
DSC : melting/crystallization behavior, solid-solid transitions, polymorphism, degree of crystallinity, glass transitions, cross-linking reactions, oxidative stability, purity determination, specific heat and thermokinetics.
Hall Effect Measurement Systems plot concentration versus temperature, mobility versus temperature, resistivity versus temperature, conductivity versus temperature, and Hall coefficient versus temperature. The HMS3000 & temperature controller HT55T5 includes software with I-V curve capability for checking the ohmic integrity of the user made sample contacts. The systems ramp to each user defined temperature, stabilize, makes the measurement and then plots the various temperature dependent material electrical properties.
TEMPERATURE Dependent Hall measurement
Instrument: HMS 3000/HT55T5 from Ecopia Corp, South Korea
Sample requirement: Thin film or bulk materials
Maximum thickness : 2 mm
Maximum Size : 1 x 1 cm
Conditions : I-V chactercteristics, uniformity of sample and peeloff test are mandatory
Features
· Low and high resistivity measurement capability, bulk and sheet carrier concentration and mobility, Hall coefficient in semiconductors
· DC measurement modes
· van der Pauw and Hall measurements
· Board system (room temperature to 673K)
Selenization/sulfurization is a process whereby a surface of a material is exposed to a selenium or sulphur containing atmosphere at high temperature. The surface reacts and forms a new compound incorporating either selenium or sulfur or a combination of the two. When Se is supplied in the gas phase (for example as H2Se or elemental Se) at high temperatures, the Se becomes incorporated into the film by absorption and subsequent diffusion.
SelenizATion Chamber
Furnace structure-Specifications
Compact 4inch RTP tube furnace
Heating Zone
12inch length with 4inch constant temperature zone: within +/-1°C uniformity.
Working Temperature
Max: 1000°C; Heating rate: 1000°C at 50°C/Sec and fast cooling
Heating elements
IR Heating Lamp; PID automatic controller for precise control of heating rate, cooling rate and dwell time
Quartz tube & sample holder
Quartz tube size -4.33inch Q.D*4.05inch 1.D*16.2inch length
Flowmeter
Gas flow adjust from 0-160ml/min
Gas Mixer
Four stainless steel valves are installed in side panels three gas flow meter to monitor the flow rate of each gas, 10-100ml/min, 16-160ml/min, 25-250ml/min
HIGH TEmperature Tubular furnace
Instrument: High Temperature Tubular Furnace, Ants Ceramics Pvt. Ltd.
Temperature: 13000C
Operating Temperature: Up to 12000C.
Sample Type: Powder (5 g), Pellet, Thin Film.
Atmospheric condition: Air, Nitrogen, Argon.
Features:
· operated by automatic temperature controller.
· samples can be heated with different atmospheric conditions such as Air, Nitrogen, Argon.
Muffle Furnace is box type heat treatment equipment used to change physical properties of samples at very high temperature. All materials (Nano to Bulk) can be prepared by the air atmosphere.
MUFFLE furnace
Instrument:Muffle Furnace,SwamEquip, Chennai.
Atmosphere: Air
Temperature: 13500 C
Operating Temperature: Up to 9000C.
Sample Type: Powder (10 g), Pellet, Thin Film
Atmospheric condition: Air
Manual hydraulic press producing a force about 15 tones uses to make high quality 13 mm Pallet used for IR/FTIR/XRF Solid Sampling.
hydraulic press
Pelletising the powders
Maximum pressure : 10 tones
Functional Material Laboratory services can be availed on charge basis.
Terms and Conditions
Prior registration with advance payment is essential to avail any of these facilities.
Appointment will be given as per queue and the allotted time for the slot will be informed through E-mail.
For a better analysis basic details about the sample should be given.
Before giving the sample for Hall measurement and Seebeck measurement analysis, it is suggested that the sample is characterized by other techniques such as XRD, SEM, AFM, TG etc.
No refund of the payment made in any case.