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FS75R12KE3

Manufacturer: Infineon

Product Category: IGBT Modules

RoHS: YES

Brand: Infineon Technologies

Product: IGBT Silicon Modules

Configuration: Hex

Collector- Emitter Voltage VCEO Max: 1200 V

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 105 A

Gate-Emitter Leakage Current: 400 nA

Maximum Operating Temperature: + 125 C

Package / Case: EconoPACK 2

Packaging: Tray

Maximum Gate Emitter Voltage: +/- 20 V

Minimum Operating Temperature: - 40 C

Mounting Style: Screw

Pd - Power Dissipation: 350 W

Factory Pack Quantity: 10

IGBT Modules 1200V 75A 3-PHASE