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FS50R12KE3 IGBT Modules 1200V 50A 3-PHASE ; FS50R12KE3

#FS50R12KE3 Infineon FS50R12KE3 New Infineon IGBT Modules 1200V 50A 3-PHASE, #FS50R12KE3

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FS50R12KE3

Manufacturer: Infineon

Product Category: IGBT Modules

RoHS: YES

Brand: Infineon Technologies

Product: IGBT Silicon Modules

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Kollektor-Emitter-Sperrspannung Collector-emitter voltage Tvj = 25°C VCES 1200 V

Kollektor-Dauergleichstrom Continuous DC collector current TC = 100°C, Tvj max = 175°C IC nom 50 A

Periodischer Kollektor-Spitzenstrom Repetitive peak collector current tP = 1 ms ICRM 100 A

Gesamt-Verlustleistung Total power dissipation TC = 25°C, Tvj max = 175°C Ptot 270 W

Gate-Emitter-Spitzenspannung Gate-emitter peak voltage VGES:±20V

Temperatur in Schaltbetrieb Temperature under switching conditions Tvj op-40~150°C

Gateladung gate charge VGE= -15V...+15V QG 0,47 µC IGES 400mA

Kollektor Emitter Reststrom collector emitter cut off current VCE= 1200V, VGE= 0V, Tvj= 25°C ICES 5mA

Gate Emitter Reststrom gate emitter leakage current VCE= 0V, VGE= 20V, Tvj= 25°C

Mounting M5 screw torque 3~6 N·m

Gewicht Weight 180 g

Betriebstemperatur operation temperature Tvj op -40~125 °C

Lagertemperatur storage temperature Tstg -40 - 125 °C