Patents

Patents

  • Thermoelectric module, construction material including the same, and method for manufacturing the thermoelectric module (Korea, 10-2109842, H. J. Lee, J. C. Baek, H. J. Choi, Y. H. Kim, M. J. Lee / May 06, 2020)

  • Resistance-switching stretch sensor including knitted conductive fibers (Korea, 10-1997327, M. J. Lee, A. J. Jo, S. J. Kim, H. J. Kim / July 01, 2019)

  • Metal oxide semiconductor thin film transistor having N-doped metal oxide semiconductor layer and manufacturing method thereof (Korea, 10-1884561, M. J. Lee, C. W. Kim, J. W. Park, Y. R. Lee / July 26, 2018)

  • Resistance-switching device having conductive fiber, fabric type resistance-switching device array having the same, memory and sensor having the device or the array (US, 15/213352, M. J. Lee, Y. D. Seo, C. W. Kim, M. S. Ko, A. J. Jo, Y. H. Kim, S. J. Kim, H. J. Kim / December 26, 2017)

  • The fabrication method of metal/carbon hybrid particles for coating the electromagnetic wave shielding fabric (Korea, 10-1771899, H. J. Choi, S. M. Lee, Y. J. Lee, S. B. Woo, H. J. Lee, Y. H. Kim, M. J. Lee / August 22, 2017)

  • Ambient gas sensor including resistance-switching device having conductive fiber (Korea, 10-1766152, M. J. Lee, A. J. Jo, H. J. Kim / August 01, 2017)

  • Stretch sensor including resistance-switching device having conductive fiber (Korea, 10-1766151, M. J. Lee, A. J. Jo, H. J. Kim, S. J. Kim / August 01, 2017)

  • Non-volatile memory device using variable resistance (Korea, 10-1720868, M. J. Lee, Y. D. Seo, C. W. Kim, M. S. Go, A. J. Jo / March 22, 2017)

  • Non-volatile memory device based on variable resistance (Korea, 10-1720867, M. J. Lee, Y. D. Seo, C. W. Kim, M. S. Go, A. J. Jo / March 22, 2017)

  • Transparant electrode containing silver nanowire-patterned layer and graphene layer, and manufacturing method thereof (Korea , 10-1682501, M. J. Lee, Y. J. Jo, C. W. Kim / November 29, 2016)

  • Method for manufacturing oxide semiconductor layer using sol-gel process including oxygen plasma treatment and oxide semiconductor layer manufactured thereby (Korea, 10-1460489, M. J. Lee, J. W. Park / November 05, 2014)

  • Manufacturing Method for Conductive Particle and Anisotropic Conductive Film Using This (Japan, 04485508, M. J. Lee, S J. Hong, W. G. Kim and J. I. Han / April 2, 2010)

  • Printed circuit board and Fabricating method thereof (Korea, 10-0757901, M. J. Lee, S. J. Hong, W. G. Kim, J. I. Han / September 5, 2007)

  • Method for fabricating conductive particle (Korea, 10-0765363, M. J. Lee, S. J. Hong, W. G. Kim, J. I. Han / October 2, 2007)

  • Manufacturing Method for Conductive Particle and Anisotropic Conductive Film Using The Same (US, 11/585863, M. J. Lee, S J. Hong, W. G. Kim and J. I. Han / May 2, 2007)

  • Method of forming conductive particle (Korea, 10-0699428, M. J. Lee, S. J. Hong, W. G. Kim, J. I. Han / March 19, 2007)

  • Method of fabricating anisotropic conductive film using electrospun (Korea, 10-0666124, M. J. Lee, S. J. Hong, W. G. Kim, J. I. Han / January 2, 2007)

  • Dry Process for ACF Ball Fabrication (China, 200610142711, M. J. Lee, S. J. Hong, W. G. Kim, J. I. Han / October 30, 2006)

  • Dry Process for ACF Ball Fabrication (EU, 06 123 112.2, M. J. Lee, S. J. Hong, W. G. Kim, J. I. Han / October 27, 2006)