Advanced nanostructuring and gradient phosphorus doping enhance p-Si photocathode performance for photoelectrochemical water splitting (If: 10.7)

Enhanced photoelectrochemical performance of black silicon via the introduction of a TiO2 passivation layer 

Fundamental origin of Si surface defects caused by laser irradiation and prevention of suboxide formation through high density ultrathin SiO2 (IF: 7.21)

Development of Eco-Friendly Ag Embedded Peroxo Titanium Complex solution based thin film and electrical behaviors of resistive random access memory 

TiO2 thin film growth research to improve photoelectrochemical water splitting efficiency

Production of silicon nanoparticles and surface modification through photochemical nanocatalysis reaction

Optimization of Si photocathode formation conditions through correlation between saw damage removal and black Si

Fabrication of low interface dipole layer on Al2O3/SiO2/Si structure by densification of interfacial layer 

Electrical Properties of TiN/TiO2/FTO Resistive Random-Access Memory Based on Peroxo Titanium Complex Sol Solution by Heat Treatment. Korean Journal of Materials Research, 32(9), 384-390.

Surface Defect Properties of Prime, Test-Grade Silicon Wafers. Korean Journal of Materials Research, 32(9), 396-402.

Dipole Formation and Electrical Properties According to SiO2 Layer Thickness at an Al2O3/SiO2 Interface, The Journal of Physical Chemistry C, 125(26), 14486-14492 

Development of eco-friendly thin film manufacturing process using poeroxo titanium complex solution and potential for resistive random access memory,Applied Surface Science, 150170 

Enhanced photoelectrochemical performance of Si/TiO2 with a high atomic density SiO2 buffer layer, Applied Surface Science, 556, 149712 

Preparation of ultra-thin TiO2 shell by peroxo titanium complex (PTC) solution-based green surface modification, and photocatalytic activity of homo-core/shell TiO2, Applied Surface Science, 540, 148399 

Improvement of Short-Circuit Current of Quantum Dot Sensitive Solar Cell Through Various Size of Quantum Dots, Korean Journal of Materials Research, 31, 16-22

Poly(methylmethacrylate) coating on quantum dot surfaces via photochemical reaction for defect passivation, Journal of Photochemistry and Photobiology A: Chemistry 376 (2019): 206-211 

Improved Interface and Electrical Properties by Inserting an Ultrathin SiO2 Buffer Layer in the Al2O3/Si Heterojunction, Advanced Functional Materials, 29(7), 1807271. 

Effect of Surfactant on the Dispersion Stability of Slurry for Semiconductor Silicon CMP, Journal of Korean Power Metallurgy Instit, 25, 395-401

Leakage Current Reduction of Ni-MILC Poly-Si TFT Using Chemical Cleaning Method, Korean Journal of Materials Research, 28(8), 440-444 

Removal of interface state density of SiO2/Si structure by nitric acid oxidation method, Korean Journal of Materials Research, 28(2), 118-123 

Structural and optical properties of ZnSe:Eu/ZnS quantum dots depending on interfacial residual europium, Applied Surface Science, 429, 225-230

An investigation into the effective surface passivation of quantum dots by a photo-assisted chemical method,AIP Advances, 8(1), 015017 

Enhancing the electrical properties of dye-sensitized solar cells by carbon-free titanium gel via a non-hydrolytic method, Journal of Photochemistry and Photobiology A: Chemistry, 351, 139-144 

Study on Surface-defect Passivation of InP System Quantum Dots by Photochemical Method, Joural of Korean Power Metallurgy Instit, 24, 489-493

Layered LiNi0.8Co0.1Mn0.1O2 Prepared through Calcination in Air with Preoxidized Precursor, Journal of The Electrochemical Society, 164(12), A2670 

Multimodal luminescence properties of surface-treated ZnSe quantum dots by Eu, Applied Surface Science, 415, 8-13 

Characterization of stainless steel surface processed using electrolytic oxidation and titanium complex ion solution, Applied Surface Science, 415, 161-165 

Densification of ∼5 nm-thick SiO2 layers by nitric acid oxidation, Applied Surface Science, 413, 92-98 

Size-Distribution Effects of TiO2 Nanopowders Synthesized by Chemical Vapor Condensation Method for Dye-Sensitized Solar Cells, Nanoscience and Nanotechnology Letters, 9(8), 1278-1281. 

Room-temperature processing of CdSe quantum dots with tunable sizes, Journal of Applied Physics, 121(22), 223102 

Lithium-silicate coating on Lithium Nickel Manganese Oxide (LiNi0.7Mn0.3O2) with a Layered Structure, Journal of Korean Powder Metallurgy Institute, 24, 87-95 

Surface Treatment Method for Long-term Stability of CdSe/ZnS Quantum Dots, Journal of Korean Powder Metallurgy Institute, 24, 1-5 

Improvement of Seaaling Property of Electrostatic Chuck by Applying Polysilazane Sealant, Journal of The Korean Institute of Surface Engineering, 49, 567-574

Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates, ACS applied materials & interfaces, 8(32), 20880-20884 

Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation, Applied Surface Science, 365, 376-379 

Low cost fabrication of blue luminescent silicon quantum dots using photo-induced chemical etching, Nanoscience and Nanotechnology Letters, 8(1), 86-89. 

The Preparation of Dye-Sensitized Solar Cell Paste Used the Peroxo Titanium Complex and Characteristics by Annealing Temperature, Journal of Korean Powder Metallurgy Institute, 22, 396-402  

Research Trend of Electrode Materials for Lithium Rechargeable Batteries, Journal of Korean Powder Metallurgy Institute, 21, 473-479

Surface Oxidation Behaviors of Cd-Rich CdSe Quantum Dot Phosphors at High Temperature, Journal of nanoscience and nanotechnology, 14(10), 8024-8027 

Improvements in the Bais Illumication Stability of Amorphous InGaZnO Thin-film Transistors by Using Thermal Treatments, Journal of the Korean Physical Society, 65, 151-155

Nitrogen-Doped TiO2 Nanoparticle-Carbon Nanofiber Composites as a Counter Electrode for Pt-Free Dye-Sensitized Solar Cells, ECS Solid State Letters, 3(8), M33 

Si nanoparticles fabricated from Si swarf by photochemical etching method, Journal of nanoparticle research, 16(3), 1-7 

Recycling of Silicon Sludge and its Optical Properties, Current Nanoscience, 10(1), 143-145 

Resistive switching characteristics of Au/P-doped NiO/Au segmented nanowires synthesized by electrochemical deposition, Japanese Journal of Applied Physics, 53(2), 024202 

Electrospun NiFe2O4 Nanofibers as High Capacity Anode Materials for Li-Ion Batteries, Nanoscience and Nanotechnology, 13, 7138-7141 

Investigation of Low-Cost, Simple Recycling Process of Waste Thermoelectric Modules Using Chemical Reduction, Bulletin of the Korean Chemical Society, 34(7), 2167-2170 

Effects of Size-Controlled TiO2 Nanopowders Synthesized by Chemical Vapor Condensation Process on Conversion, Journal of nanoscience and nanotechnology, 13(7), 4622-4626 

Enhancement of Photoelectric Efficiency in a Dye-sensitized Solar Cell Using Hollow TiO2 Nanoparticles as an Overlayer, Bulletin of the Korean Chemical Society, 34(6), 1853-1856 

Core-size-dependent properties of CdSe/CdS core/shell QDs, Materials Letters, 99, 14-17 

Surface Structure Chemical Transfer Method for Formation of Ultralow Reflectivity Si Surfaces, Journal of The Electrochemical Society, 160(8), H443 

Study on nitrogen-induced defects formation and annealing effects in TlInGaAsN alloy system, Journal of crystal growth, 368, 35-38 

Changes in Minority Carrier Lifetime of Hydrogen-Terminated Si Surfaces in Dry- andWet-Air, ECS Solid State Letters, 1(6), P89

Passivation of Si-based structures in HCN and KCN solutions, Applied surface science, 258(21), 8397-8405 

Study of density of interface states in MOS structure with ultrathin NAOS oxide, Open Physics, 10(1), 210-217 

X-ray photoelectron spectroscopy analysis of TlInGaAsN semiconductor system and their annealing-induced structural changes, Journal of Applied Physics, 108(12), 123524 

Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO2/Si and SiO2/SiC structures, Applied surface science, 256(19), 5744-5756 

On ultra-thin oxide/Si and very-thin oxide/Si structures prepared by wet chemical process, Applied surface science, 256(19), 5757-5764 

Ultrathin SiO2 layer with a low leakage current density formed with similar to 100% nitric acid vapor, Nanotechnology, 21(11), 115202 

Removal of charging on SiO2/Si structure during photoelectron spectroscopy measurements by metal overlayer, Journal of Electron Spectroscopy and Related Phenomena, 176(1-3), 8-12 

Low temperature formation of SiO2 thin films by nitric acid oxidation of Si (NAOS) and application to thin film transistor (TFT), Microelectronic engineering, 86(7-9), 1939-1941

Ultrathin SiO2 layer with an extremely low leakage current density formed in high concentration nitric acid, Journal of Applied Physics, 105(10), 103709 

Ultrathin SiO2 layer on atomically flat Si(111) surfaces with excellent electrical characteristics formed by nitric acid oxidation method, Applied Physics Letters, 93(7), 072101