My current Studying, Learning, Teaching, & Research Interests
Electronics domain
Semiconductor Device
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VLSI Circuit Design, ASIC, FPGA, Computer Architecture (RISC-V)
Click on this to know more about my study and research interests on VLSI Circuit Design, ASIC, FPGA, Computer Architecture (RISC-V)
Energy-Efficient Integrated Circuits, Adaptive Integrated Circuits (ICs) and IC sensors, Low Power Mixed-Signal ICs for a variety of applications, Neuromorphic VLSI design, Constrained Optimization Circuits, Beyond-CMOS devices, and Three-dimensional (3D) Integrated Circuits.
Spintronics domain
Spintronic Device
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Computational Simulation and Research on Magnetic Tunnel Junction (MTJ), Topological Insulators, Spin-Orbit Torque (SOT) and SOT Switching, and Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM).
Quantum Computing domain
Quantum Circuits
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My Previous Research Experience
Spintronics domain
Spintronic Material Modeling and Simulation based on First Principle Study calculation using Density Functional Theory (DFT)
Click on this to know more about my Previous Research Experience on Spintronic Material Modeling and Simulation based on First Principle Study calculation using Density Functional Theory (DFT)
Approximately for one and a half years, from my own interest on Spintronic Devices, I alone, without any advisor, supervisor, researcher guidance, or any help from the faculty members, managed to learn the Spintronic Materials Modeling & Simulation with DFT • DFT+U+V on Quantum ESPRESSO and other auxiliary tools such as: BURAI, VESTA, XCrySDen etc.
During the beginning of my 1st Year 2nd Semester undergraduate career, I started to learn and perform small tasks, on Spintronic Material Modelling and Simulation based on the First Principle Study calculation based on Density Functional Theory (DFT) and DFPT, DFT+U, and others, till, 2nd Year 1st Semester of my undergraduate career in BSc (Engg.) in EEE.
My primary focus was suitable material selection for Spintronic application and characteristic investigation of the materialistic properties, through developing a novel Transition Metal Dichalcogenide (TMD), or Transition Metal Oxides (TMO), or MXene, and by the First Principle Study calculation based on Density Functional Theory (DFT).