Journals

Filament-free memristors for computing

Nano Convergence 10, 58 (2023)

Sanghyeon Choi†, Taehwan Moon†, Gunuk Wang, J. Joshua Yang

Negative differential capacitance in ultrathin ferroelectric hafnia

Nature Electronics 6(5), 390-397 (2023)

Sanghyun Jo, Hyangsook Lee, Duk-Hyun Choe, Jung-Hwa Kim, Yun Seong Lee, Owoong Kwon, Seunggeol Nam, Yoonsang Park, Kihong Kim, Byeong Gyu Chae, Sangwook Kim, Seunghun Kang, Taehwan Moon, Hagyoul Bae, Jung Yeon Won, Dong-Jin Yun, Myoungho Jeong, Hyun Hwi Lee, Yeonchoo Cho, Kwang-Hee Lee, Hyun Jae Lee, Sangjun Lee, Kab-Jin Nam, Dongjin Jung, Bong Jin Kuh, Daewon Ha, Yongsung Kim, Seongjun Park, Yunseok Kim, Eunha Lee, Jinseong Heo

In operando optical tracking of oxygen vacancy migration and phase change in few nanometers ferroelectric HZO memories

Advanced Functional Materials 33(22), 2214970 (2023)

Atif Jan, Thomas Rembert, Sunil Taper, Joanna Symonowicz, Nives Strkalj, Taehwan Moon, Yun Seong Lee, Hagyoul Bae, Hyun Jae Lee, Duk‐Hyun Choe, Jinseong Heo, Judith MacManus‐Driscoll, Bartomeu Monserrat, Giuliana Di Martino

Parallel synaptic design of ferroelectric tunnel junctions for neuromorphic computing

Neuromorphic Computing and Engineering 3(2), 024001 (2023)

Taehwan Moon, Hyun Jae Lee, Seunggeol Nam, Hagyoul Bae, Duk-Hyun Choe, Sanghyun Jo, Yun Seong Lee, Yoonsang Park, J. Joshua Yang, Jinseong Heo

Wake-up and endurance characteristics in Hf0.5Zr0.5O2-based metal-ferroelectric-metal capacitor depending on the crystal orientation of the TiN bottom electrodes

IEEE Transactions on Electron Devices 70(4), 1983-1988 (2023)

Dong Hee Han, Ae Jin Lee, Min Kyeong Nam, Seungwoo Lee, Su Jin Choi, Youngjin Kim, Taehwan Moon*, Woojin Jeon*

Large remnant polarization and great reliability characteristics in W/HZO/W ferroelectric capacitors

Frontiers in Materials 9(18), 969188 (2022)

Shiva Asapu, James Nicolas Pagaduan, Ye Zhuo, Taehwan Moon, Rivu Midya, Dawei Gao, Jungmin Lee, Qing Wu, Mark Barnell, Sabyasachi Ganguli, Reika Katsumata, Yong Chen, Qiangfei Xia, J. Joshua Yang

Hybrid deep learning crystallographic mapping of polymorphic phases in polycrystalline Hf0.5Zr0.5O2 thin films

Small 18(18), 2107620 (2022)

Young-Hoon Kim, Sang-Hyeok Yang, Myoungho Jeong, Min-Hyoung Jung, Daehee Yang, Hyangsook Lee, Taehwan Moon, Jinseong Heo, Hu Young Jeong, Eunha Lee, Young-Min Kim

Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls

Materials Today 50, 8-15 (2021)

Duk-Hyun Choe, Sunghyun Kim, Taehwan Moon, Sanghyun Jo, Hagyoul Bae, Seung-Geol Nam, Yun Seong Lee, Jinseong Heo

Unveiling the origin of robust ferroelectricity in sub-2nm hafnium zirconium oxide films

ACS Applied Materials & Interfaces 13(30), 36499-36506 (2021)

Hyangwook Lee, Duk-Hyun Choe, Sanghyun Jo, Jung-Hwa Kim, Hyun Hwi Lee, Hyun-Joon Shin, Yeehyun Park, Seunghun Kang, Yeonchoo Cho, Seontae Park, Taehwan Moon, Deokjoon Eom, Mirine Leem, Yunseok Kim, Jinseong Heo, Eunha Lee, Hyoungsub Kim

Threshold voltage modulation in a transistor with a two-dimensional electron gas channel at the interface between Al2O3 and sub-5nm ZnO films

ACS Applied Electronic Materials 3(7), 3247-3255 (2021)

Hyun Jae Lee, Taehwan Moon, Sukin Kang, Woohyun Kim, Cheol Seong Hwang

Characterization of a 2D electron gas at the interface of atomic-layer deposited Al2O3/ZnO thin films for a field-effect transistor

Advanced Electronic Materials 7(1), 2000876 (2020)

Hyun Jae Lee, Taehwan Moon, Seung Dam Hyun, Sukin Kang, Cheol Seong Hwang

A comparative study on the ferroelectric performances in atomic layer deposited Hf0.5Zr0.5O2 thin films using tetrakis(ethylmethylamino) and tetrakis(dimethylamino) precursors

Nanoscale Research Letters 15, 72 (2020)

Baek Su Kim, Seung Dam Hyun, Taehwan Moon, Keum Do Kim, Young Hwan Lee, Hyeon Woo Park, Yong Bin Lee, Jangho Roh, Beom Yong Kim, Ho Hyun Kim, Min Hyuk Park, Cheol Seong Hwang

Origin of the threshold voltage shift in a transistor with a 2D electron gas channel at the Al2O3/SrTiO3 interface

Advanced Electronic Materials 6(6), 1901286 (2020)

Taehwan Moon†, Hyun Jae Lee†, Seung Dam Hyun, Baek Su Kim, Ho Hyun Kim, Cheol Seong Hwang

A comprehensive study on the mechanism of ferroelectric phase formation in hafnia-zirconia nanolaminates and superlattices

Applied Physics Reviews 6, 041403 (2019)

Min Hyuk Park, Han Joon Kim, Gwangyeop Lee, Jaehong Park, Young Hwan Lee, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Hyun Woo Park, Hye Jung Chang, Jung-Hae Choi, Cheol Seong Hwang

Transient negative capacitance effect in atomic-layer-deposited Al2O3/Hf0.3Zr0.7O2 bilayer thin film

Advanced Functional Materials 29(17), 1808228 (2019)

Keum Do Kim, Yu Jin Kim, Min Hyuk Park, Hyeon Woo Park, Young Jae Kwon, Yong Bin Lee, Han Joon Kim, Taehwan Moon, Young Hwan Lee, Seung Dam Hyun, Baek Su Kim, Cheol Seong Hwang

Nucleation-limited ferroelectric orthorhombic phase formation in Hf0.5Zr0.5O2 thin films

Advanced Electronic Materials 5(2), 1800436 (2019)

Young Hwan Lee, Seung Dam Hyun, Hae Jin Kim, Jun Shik Kim, Chanyoung Yoo, Taehwan Moon, Keum Do Kim, Hyeon Woo Park, Yong Bin Lee, Baek Su Kim, Jangho Roh, Min Hyuk Park, Cheol Seong Hwang

Diode property and positive temperature coefficient of resistance of Pt/Al2O3/Nb:SrTiO3

Advanced Electronic Materials 4(12), 1800388 (2018)

Taehwan Moon, Hyun Jae Lee, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Hyeon Woo Park, Yong Bin Lee, Baek Su Kim, Cheol Seong Hwang

Morphotropic phase boundary of Hf1-xZrxO2 thin films for dynamic random access memories

ACS Applied Materials & Interfaces 10(49), 42666-42673 (2018)

Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Cheol Seong Hwang

Dispersion in ferroelectric switching performance of polycrystalline Hf0.5Zr0.5O2 thin films

ACS Applied Materials & Interfaces 10(41), 35374-35384 (2018)

Seung Dam Hyun, Hyeon Woo Park, Yu Jin Kim, Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Young Jae Kwon, Taehwan Moon, Keum Do Kim, Yong Bin Lee, Baek Su Kim, Cheol Seong Hwang

Composition, microstructure, and electrical performance of sputtered SnO thin films for p-type oxide semiconductor

ACS Applied Materials & Interfaces 10(4), 3810-3821 (2018)

Seung Jun Lee, YounJin Jang, Han Joon Kim, Eun Suk Hwang, Seok Min Jeon, Jun Shik Kim, Taehwan Moon, Kyung-Tae Jang, Young-Chang Joo, Deok-Yong Cho, Cheol Seong Hwang

Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films

Nanoscale 10(2), 716-725 (2018)

Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Thomas Mikolajick, Uwe Schroeder, Cheol Seong Hwang

Voltage drop in a ferroelectric single layer capacitor by retarded domain nucleation

Nano Letters 17(12), 7796-7802 (2017)

Yu Jin Kim, Hyeon Woo Park, Seung Dam Hyun, Han Joon Kim, Keum Do Kim, Young Hwan Lee, Taehwan Moon, Yong Bin Lee, Min Hyuk Park, Cheol Seong Hwang

Scale-up and optimization of HfO2-ZrO2 solid solution thin films for the electrostatic supercapacitors

Nano Energy 29, 390-399 (2017)

Keum Do Kim, Young Hwan Lee, Taehong Gwon, Yu Jin Kim, Han Joon Kim, Taehwan Moon, Seung Dam Hyun, Hyeon Woo Park, Min Hyuk Park, Cheol Seong Hwang

Preparation and characterization of ferroelectric Hf0. 5Zr0. 5O2 thin films grown by reactive sputtering

Nanotechnology 28(30), 305703 (2017)

Young Hwan Lee, Han Joon Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Hyeon Woo Park, Yong Bin Lee, Min Hyuk Park, Cheol Seong Hwang

Research Update: Diode performance of the Pt/Al2O3/two-dimensional electron gas/SrTiO3 structure and its time-dependent resistance evolution

APL Materials 5(4), 042301 (2017)

Taehwan Moon, Hae Jun Jung, Yu Jin Kim, Min Hyuk Park, Han Joon Kim, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Hyeon Woo Park, Sang Woon Lee, Cheol Seong Hwang

Time-dependent negative capacitance effects in Al2O3/BaTiO3 bilayers

Nano Letters 16(7), 4375-4381 (2016)

Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Cheol Seong Hwang

Giant negative electrocaloric effects of Hf0.5Zr0.5O2 thin films

Advanced Materials 28(36), 7956-7961 (2016)

Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Cheol Seong Hwang

Effect of Zr content on the wake-up effect in Hf1-xZrxO2 films

ACS Applied Materials & Interfaces 8(24), 15466-15475 (2016)

Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Young Hwan Lee, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Franz Fengler, Uwe Schroeder, Cheol Seong Hwang

Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors

Scientific reports 6, 20825 (2016)

Seul Ji Song, Yu Jin Kim, Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Taehwan Moon, Keum Do Kim, Jung-Hae Choi, Zhihui Chen, Anquan Jiang, Cheol Seong Hwang

Frustration of negative capacitance in Al2O3/BaTiO3 bilayer structure

Scientific reports 6, 19039 (2016)

Yu Jin Kim, Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Taehwan Moon, Keum Do Kim, Doo Seok Jeong, Hiroyuki Yamada, Cheol Seong Hwang

Ferroelectricity in undoped-HfO 2 thin films induced by deposition temperature control during atomic layer deposition

Journal of Materials Chemistry C 4(28), 6864-6872 (2016)

Keum Do Kim, Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Young Hwan Lee, Seung Dam Hyun, Taehong Gwon, Cheol Seong Hwang

Two-step polarization switching mediated by a nonpolar intermediate phase in Hf 0.4 Zr 0.6 O 2 thin films

Nanoscale 8(29), 13898-13907 (2016)

Min Hyuk Park, Han Joon Kim, Young Hwan Lee, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Cheol Seong Hwang

A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2 films by pulse-switching measurement

Nanoscale 8(3), 1383-1389 (2016)

Han Joon Kim, Min Hyuk Park, Yu Jin Kim, Young Hwan Lee, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Cheol Seong Hwang

Interfacial charge-induced polarization switching in Al2O3/Pb(Zr,Ti)O3 bi-layer

Journal of Applied Physics 118(22), 224105 (2015)

Yu Jin Kim, Min Hyuk Park, Woojin Jeon, Han Joon Kim, Taehwan Moon, Young Hwan Lee, Keum Do Kim, Seung Dam Hyun, Cheol Seong Hwang

Study on the size effect in Hf0. 5Zr0. 5O2 films thinner than 8 nm before and after wake-up field cycling

Applied Physics Letters 107(19), 192907 (2015)

Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Young Hwan Lee, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Cheol Seong Hwang

Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric HfxZr1−xO2 films

Nano Energy 12, 131-140 (2015)

Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Cheol Seong Hwang

Ferroelectricity and antiferroelectricity of doped thin HfO2-based films

Advanced Materials 27(11), 1811-1831 (2015)

Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim,  Johannes Mueller, Alfred Kersch, Uwe Schroeder, Thomas Mikolajick, Cheol Seong Hwang

Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films

Journal of Materials Chemistry C 3(24), 6291-6300 (2015)

Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Cheol Seong Hwang

Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer

Applied Physics Letters 105(19), 192903 (2014)

Han Joon Kim, Min Hyuk Park, Yu Jin Kim, Young Hwan Lee, Woojin Jeon, Taehong Gwon, Taehwan Moon, Keum Do Kim, Cheol Seong Hwang

Thin HfxZr1-xO2 films: A new lead-free system for electrostatic supercapacitors with large energy storage density and robust thermal stability

Advanced Energy Materials 4(16), 1400610 (2014)

Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Cheol Seong Hwang

Effect of the annealing temperature of thin Hf0.3Zr0.7O2 films on their energy storage behavior

Physica Status Solidi-Rapid Research Letters 8(10), 857-861 (2014)

Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Cheol Seong Hwang

Study on the degradation mechanism of the ferroelectric properties of thin Hf0.5Zr0.5O2 films on TiN and Ir electrodes

Applied Physics Letters 105(7), 072902 (2014)

Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Cheol Seong Hwang

Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2 films on TiN bottom and TiN or RuO2 top electrodes

Physica Status Solidi-Rapid Research Letters 8(6), 532-535 (2014)

Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Woojin Jeon, Taehwan Moon, Cheol Seong Hwang

The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

Applied Physics Letters 104(7), 072901 (2014)

Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Cheol Seong Hwang