Through low-temperature transport measurements, we show that moiré ferroelectricity in a 2.1° twisted bilayer WSe₂ can remotely influence graphene transport. Graphene functions as a quantum sensing layer, revealing nonlocal resistance signatures tied to inversion symmetry breaking, Berry curvature effects, and domain wall dynamics — paving the way for engineered ferroelectric and quantum devices. 

Moiré-engineered lattices in twisted WSe₂ enable robust ferroelectric polarization at the atomic scale, making them ideal for non-volatile memory devices. We demonstrate a moiré ferroelectric FET with strong hysteresis, near-ideal subthreshold swing, and fast switching dynamics — highlighting its promise for low-power, steep-slope logic and next-generation memory technologies. 

Twist angle engineering in bilayer WSe₂ enables precise control over light–matter interactions and excitonic complexes. At intermediate misorientations, we observe robust biexcitons and charged biexcitons, alongside tunable exciton dynamics via electrostatic doping, highlighting twisted bilayers as a powerful platform for nonlinear optics and second-harmonic generation (SHG).