Electronics Devices Laboratory
General information about the Laboratory: According to present curriculum B-Tech (ECE) 3rd Semester students perform experiments on Electronics Devices Laboratory.
Electronics Devices Laboratory (EC 391)
Course Outcomes:
CO 1: Ability to verify the working of different diodes, transistors, CRO probes, measuring instruments and to identify the procedure of doing the experiment.
CO 2: Ability to understand the characteristics of Diode and Zener Diode and how to determine different parameters under forward and reverse bias conditions.
CO 3: Ability to understand the characteristics of BJT and FET and how to determine different parameters for designing purpose.
CO 4: Ability to understand properties of photoelectric devices.
CO 5: Ability to measure and record the experimental data, analyze the results, and prepare a formal laboratory report.
Lists of experiments performed :
1. Identifying and study of different components like resistor, capacitors, diodes, LED, Transistors, FET (JFET & MOSFET) etc.
2. Study of different instruments used in the laboratories like, power supply, Oscilloscope, Multi-meter etc.
3. CHARACTERISTICS OF PN JUNCTION DIODE
a. To Plot the Volt Ampere Characteristics of PN Junction Diode under Forward and Reverse Bias Conditions.
b. To find the Cut-in voltage, Static Resistance, Dynamic Resistance for Forward Bias & Reverse Bias.
4. CHARACTERISTICS OF ZENER DIODE & LOAD REGULATION
a. To Obtain the Forward Bias and Reverse Bias characteristics of a Zener diode.
b. Find out the Zener Break down Voltage from the Characteristics.
c. To Obtain the Load Regulation Characteristics.
5. COMMON BASE BIPOLAR TRANSISTOR CHARACTERISTICS
a. To plot the Input and Output characteristics of a transistor connected in Common Base Configuration and to find the h – parameters from the characteristics.
6. COMMON EMITTER BIPOLAR TRANSISTOR CHARACTERISTICS
a. To plot the Input and Output characteristics of a transistor connected in Common Emitter Configuration and to find the h – parameters from the characteristics.
7. DESIGN SELF BIAS BJT CIRCUIT.
8. JFET DRAIN & TRANSFER CHARACTERISTICS (COMMON SOURCE)
a. Drain characteristics.
b. Transfer Characteristics.
c. To find rd, gm, and μ from the characteristics.
9. Study Characteristics of Photo transistor.
10. Study Characteristics of LED & LDR.
Lists of experiments performed beyond the syllabus:
Study of Half wave and Full wave Rectifier circuits with and without filter.
Study of C-V characteristics of a MOS structure by appropriate software.
Study of Drain characteristics and Transfer characteristics of a MOSFET and hence determine the FET parameters like drain resistance, transconductance & amplification factor by appropriate software.
Facility available in the laboratory:
Advanced Digital Multimeter
Digital panel meter.
3 channel power supply
Open Door Access: Total working hours
Fully air conditioned Lab
Major Equipment:
DC regulated Power Supply
10 MHz Function Generator