Material fabrication is an important part to tailor the characteristic of the material. Thin film deposition is an integral part to study the junction property and to further proceed for device application. Chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer epitaxy, molecular beam epitaxy, sputtering, or laser ablation have been successfully employed to deposit single and polycrystalline forms of SiC thin films on substrate. Each technique has its own merits and limitations. In comparison to other coating techniques CVD gives a uniform and crack free coating on simple and complex surfaces.

The low temperature, low pressure single source precursor CVD method for realization of SiC- based MEMS and SiC-coated Si MEMS have several key advantages over the conventional CVD SiC deposition method such as (1) high quality polycrystalline films at low temperatures . (2) The use of single precursor insures the stoichiometry of the CVD reactor base feed gas, eliminating the need for an elaborate gas handling system. (3) No pre-carbonization step is needed for deposition on Si and SiO₂. Our work is mainly focused on the deposition of carbon rich coating (SiC) at different temperatures by CVD process at low pressure and temperature using liquid polycarbosilane(LPCS) as single precursors on silicon substrate.

Thin film deposition by chemical vapour deposition technique was carried out using polymer precursors for schottky diode fabrication and its various electrical and optical characterizations. Defects are an integral part of the thin film deposition and these defects will intern effect the electrical and optical properties. We also aim at identifying the interfacial defects using EPR (Electron Paramagnetic Resonance) technique and explain the electrical and optical properties based on these.