由豐富無毒元素構成的CZTSSe薄膜，是極具潛力的下一代太陽能吸收層材料。 CZTSSe thin films are composed of earth-abundant, non-toxic elements. They are considered promising next-generation solar absorbers. 

原子級薄的TMDs材料展現獨特光電子特性，為新穎2D半導體器件提供平臺。 TMD materials are atomically thin semiconductors with unique optoelectronic properties. They provide a platform for novel 2D semiconductor devices. 

簡單化合物Sb₂(S,Se)₃具有優良穩定性與適中能隙，是新型薄膜太陽能吸收層材料。 Sb₂(S,Se)₃ is a simple compound with excellent stability and a suitable bandgap. These qualities make it a promising new thin-film solar absorber. 

氧化亞銅（Cu₂O）為廉價寬帶隙p型半導體，可應用於太陽能光電與光催化。 Cu₂O is a low-cost, wide-bandgap p-type semiconductor. It has applications in solar photovoltaics and photocatalysis. 

Bi₂O₂Se為新穎的層狀2D半導體，具有高遷移率並適用於高速光電元件。 Bi₂O₂Se is a novel layered 2D semiconductor noted for its high mobility. It is well-suited for high-speed optoelectronic devices. 

SnS 為地球豐富且無毒的層狀半導體，兼具優異光吸收與低熱導特性，適用於薄膜太陽能與熱電能量轉換。 SnS is an earth-abundant, non-toxic layered semiconductor with strong light absorption and low thermal conductivity, enabling applications in thin-film photovoltaics and thermoelectrics. 

g-C₃N₄ 以可見光驅動光催化反應，實現太陽能轉換與燃料生成。g-C₃N₄ enables visible-light-driven photocatalysis for solar fuel conversion. 

Ga₂O₃ 為超寬能隙氧化物半導體，適用於高功率電子元件與深紫外光偵測應用。 Ga₂O₃ is an ultra-wide-bandgap oxide semiconductor for high-power electronics and deep-UV photodetection.