Outcomes

Devices Developed and their Performance

3D-Cylindrical-GAA-nTFET based on asymmetrical spacer width with drain underlap

3D Cyl GAA-TFET

3D-Cylindrical-GAA-nTFET based on asymmetrical spacer width

3D-Cylindrical -GAA-nTFET based on Ge-source

A Cross-sectional view and 3-D view of Drain Underlap (DU) Cyl-GAA-TFET based on Ge-Source overlapped with hetero-spacer (HTS) dielectric

Transfer characteristics for the case of Si and Ge-GAA-TFET

Transfer characteristics of DU GAA-TFET and DG-TFET based on Si/Ge Source overlapped with hetero and homo spacer dielectric at VG=1.5 V.

Transfer characteristic of AU, SU-Cyl-GAA with LSW/FSW of TFET

Simulated electric field strengths in the case of AS and SS-GAA-TFET

Publications

  1. Ankur Beohar, Nandakishor Yadav, Ambika Prasad Shah and Santosh Kumar Vishvakarma, “Analog/RF characteristics of a 3D Cyl underlap GAA-TFET based on a Ge-Source using fringing field engineering for low power applications,” Springer Journal of Computational Electronics, vol. 17, no. 4, Dec. 2018, pp 1650–1657. [PDF]

  2. Ankur Beohar, Nandakishor Yadav, and Santosh Kumar Vishvakarma, “Analysis of Trap Assisted Tunneling in Asymmetrical Underlap 3D-Cylindrical GAA-TFET based on Hetero Spacer Engineering for Improved Device Reliability,” IET Micro & Nano Letters, vol. 12, no. 12, Dec. 2017, pp. 982-986. [PDF]

  3. Ankur Beohar and Santosh Kumar Vishvakarma, “Performance Enhancement of Asymmetrical Underlap 3D Cylindrical GAA-TFET with low Spacer Width,” IET Micro & amp; Nano Letters, vol. 11, no. 8, May 2016, pp. 443-445. [PDF]

  4. Santosh Kumar Vishvakarma, Ankur Beohar, Vikas Vijayvargiya and Priyal Trivedi, “Analysis of DC and Analog/RF performance on Cyl GAA-TFET using distinct device geometry,” IOP Science, Journal of Semiconductor, vol. 38, no.7, July 2017, pp. 074003 (1-5). [PDF]

  5. Ankur Beohar, Santosh Kumar Vishvakarma, “Performance Enhancement of 3D Cylindrical (Cyl) Gate All Around (GAA) Tunnel Field Effect Transistor (TFET) With Asymmetrical Spacer Width,” 18th International Workshop on Physics of Semiconductor Devices (IWPSD), IISc, Bangalore, India, Dec. 7th -10th, 2015.

  6. Ankur Beohar, Ambika Prasad Shah, Nandakishor Yadav, and Santosh Kumar Vishvakarma, "Design of 3D Cylindrical GAA-TFET Based on Germanium Source with Drain Underlap for Low Power Applications,” 13th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), National Tsing Hua University, Hsinchu, Taiwan, Oct. 18th -20th, 2017. [PDF]

  7. Nandakishor Yadav, Ambika Prasad Shah, Ankur Beohar and Santosh Kumar Vishvakarma, “Source Drain Gaussian Doping Profile Analysis for High ON Current of InGaAs Based HEMT,” 13th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), National Tsing Hua University, Hsinchu, Taiwan, Oct. 18th - 20th, 2017. [PDF]

  8. Ambika Prasad Shah, Nandakishor Yadav, Ankur Beohar and Santosh Kumar Vishvakarma, “Subthreshold Darlington Pair Based NBTI Sensor for Reliable CMOS Circuits,” 13th IEEE International Conference on EDSSC, National Tsing Hua University, Hsinchu, Taiwan, Oct. 18th -20th, 2017. [PDF]

  9. Ambika Prasad Shah, Nandakishor Yadav, Ankur Beohar and Santosh Kumar Vishvakarma, “On-Chip NBTI Sensor Circuits for Stable and Reliable CMOS Circuits”, 31st International Conference on VLSI Design, Pune, Maharashtra, India, Jan. 6th-11th, 2018.

  10. Nandakishor Yadav, Ankur Beohar, Ambika Prasad Shah, and Santosh Kumar Vishvakarma, “Analytical Single Trap-Induced Threshold Voltage shift Modeling for Asymmetric high-k spacer FinFET; 4th International Conference on Production & amp; Industrial Engineering (CPIE), NIT Jalandhar, Punjab, Dec. 19th-21th, 2016.