Investigation of Analog/RF and Digital Performance of Cylindrical Gate (ClyG) Gate-All-Around (GAA) Tunnel Field Effect Transistor (TFET) for Ultra Low Power Applications
Aim
Design and development of 3D Cylindrical Gate GAA TFET for Ultra Low Power Applications
Objectives
The motto of this proposal was to design a cylindrical gate (CylG) gate-all-around (GAA) based tunnel field-effect transistor (TFET) device using TCAD.
To optimize CylG GAA TFET by reduction of bandgap at the tunnel junction for improvement in ON current and subthreshold swing.
Analytical model of drain current and estimation of various capacitances associated with the device
Overall performance of the CylG GAA TFET has to be studied in terms of analog /RF and digital performance using EDA and TCAD tools.
3D Cyl GAA-TFET
Duration of the Project: 3.5 Years (1st October 2014 - 31st March 2018) Project Cost: INR 35.13 Lakhs
Funding Agency
India