Investigation of Analog/RF and Digital Performance of Cylindrical Gate (ClyG) Gate-All-Around (GAA) Tunnel Field Effect Transistor (TFET) for Ultra Low Power Applications

Aim

Design and development of 3D Cylindrical Gate GAA TFET for Ultra Low Power Applications

Objectives

  • The motto of this proposal was to design a cylindrical gate (CylG) gate-all-around (GAA) based tunnel field-effect transistor (TFET) device using TCAD.

  • To optimize CylG GAA TFET by reduction of bandgap at the tunnel junction for improvement in ON current and subthreshold swing.

  • Analytical model of drain current and estimation of various capacitances associated with the device

  • Overall performance of the CylG GAA TFET has to be studied in terms of analog /RF and digital performance using EDA and TCAD tools.

3D Cyl GAA-TFET

Duration of the Project: 3.5 Years (1st October 2014 - 31st March 2018) Project Cost: INR 35.13 Lakhs

Funding Agency

India