The motto of this proposal was to design a cylindrical gate (CylG) gate-all-around (GAA) based tunnel field-effect transistor (TFET) device using TCAD.

To optimize CylG GAA TFET by reduction of bandgap at the tunnel junction for improvement in ON current and subthreshold swing.

Analytical model of drain current and estimation of various capacitances associated with the device

Overall performance of the CylG GAA TFET has to be studied in terms of analog /RF and digital performance using EDA and TCAD tools.