Cornell Superconductor / Semiconductor Quantum Device Group
Superconductors exhibit macroscopic quantum effects. Superconductor/semiconductor heterostructures of high crystalline perfection offer a playground for a new generation of devices for quantum computation. Our group investigates such heterostructures to solve the key hurdles towards realistic quantum computing devices. These heterostructures offer the potential to identify and eliminate sources of decoherence and errors holding back the potential of quantum computation.
Our papers in this area in chronological order:
2022
374 APL Materials Structural and electronic properties of NbN/GaN junctions grown by molecular beam epitaxy
361 IEEE Trans. Magnetics Epitaxial ferrimagnetic Mn4N thin films on GaN by Molecular Beam Epitaxy
2021
354 Science Advances Momentum-resolved electronic structure and band-offsets in an epitaxial NbN/GaN superconductor/semiconductor heterojunction
339 Science Advances An All-Epitaxial Nitride Heterostructure with Concurrent Quantum Hall Effect and Superconductivity
334 Phys. Rev. Materials An unexplored MBE growth mode reveals new properties of superconducting NbN
2020
330 APL GaN/AlGaN 2DEGs in the quantum regime: Magnetotransport and photoluminescence to 60 Tesla
325 APL Epitaxial niobium nitride superconducting nanowire single-photon detectors
313 Optical Materials Express Epitaxial Superconducting Tunnel Diodes for Energy Resolved Light Detection
301 PSS(a) MBE of Transition Metal Nitrides for Superconducting Device Applications
2019
268 JJAP The new nitrides: layered, ferroelectric, magnetic, metallic and superconducting nitrides to boost the GaN photonics and electronics eco-system
265 APEX Thickness dependence of superconductivity in ultrathin NbS2
2018
249 Nature GaN/NbN epitaxial semiconductor/superconductor heterostructures