Cornell Semiconductor UV Laser Group
Our papers in this area in chronological order
2022
368 AIP Advances Optically pumped deep-UV multimode lasing in AlGaN double-heterostructure grown by MBE
2021
340 APL MBE growth and donor doping of coherent ultrawide bandgap AlGaN alloy layers on single-crystal AlN substrates
2020
327 Optics Express Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy
317 APL Light-Emitting Diodes With AlN Polarization-Induced Buried Tunnel Junctions: A Second Look
316 APL Bottom Tunnel Junction Blue Light-Emitting Field-Effect Transistors
315 APL Surface control and MBE growth diagram for homoepitaxy on single-crystal AlN substrates
312 SPIE Proceedings Monolithically p-down nitride laser diodes and LEDs obtained by MBE using buried tunnel junction design
309 APL Molecular Beam Homoepitaxy on bulk AlN enabled by aluminum-assisted surface cleaning
297 ECS Journal SST Nitride LEDs and Lasers with Buried Tunnel Junctions
296 Optics Letters GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy
295 Optics Express Enhanced injection efficiency and light output in bottom tunnel-junction LEDs
2019
291 DRC Efficient InGaN p-Contacts for deep-UV Light Emitting Diodes
283 Science A polarization-induced 2D Hole Gas in undoped Gallium Nitride Quantum Wells
272 JJAP Blue (In, Ga) N light-emitting diodes with buried n+–p+ tunnel junctions by plasma-assisted molecular beam epitaxy
271 JAP Polarization control in nitride quantum well light emitters enabled by bottom tunnel-junctions
267 APL Bandgap narrowing and Mott transition in Si-doped Al0.7Ga0.3N
2018
245 APL 234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes
2017
243 CLEO Tunnel-junction p-contact sub-250 nm deep-UV LEDs
239 DRC High-temperature p-type polarization doped AlGaN cladding for sub-250 nm deep-UV quantum well LEDs by MBE
233 APL Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures
227 APL Physics and Polarization Characteristics of 298 nm AlN-delta-GaN Quantum Well UV LEDs
223 APL MBE-grown 232-270 nm deep-UV LEDs using monolayer-thin binary GaN/AlN quantum heterostructures
2016
222 APL Deep-UV Emission from Ultra-Thin GaN/AlN Heterostructures
208 JJAP Sub-230 nm deep-UV emission from GaN quantum disks in AlN grown by a modified Stranski-Krastanov mode
2015
202 DRC Deep-UV LEDs using polarization-induced doping: Electroluminescence at cryogenic temperatures
2014
158 APL Tunnel-Injection Quantum Dot deep-UV LEDs with Polarization-Induced Doping in III-Nitride Heterostructures
2013
133 APL Tunnel-injection GaN quantum-dot ultraviolet light-emitting diodes
2011
92 APL N-Polar III-nitride quantum well light emitting diodes with polarization-induced doping
79 Phys. Stat. Sol. Polarization Engineering in Group-III Nitride Heterostructures: New Opportunities for Device Design
77 JAP Green luminescence of InGaN nanowires grown on Silicon substrates by MBE
2010
64 Phys. Stat. Sol. Short-period AlN/GaN p-type superlattices: Hole transport usage in p-n Junctions
60 Science Polarization Induced Hole Doping in Wide Bandgap Uniaxial Semiconductor Heterostructures
2009
59 Phys. Rev. Lett. Polarization Induced Zener Tunnel Junctions in Wide Bandgap Heterostructures
2008
47 DRC Polarization Induced Graded AlGaN pâ€n Junction grown by MBE
2006
22 JAP Compositional modulation and optical emission in AlGaN epitaxial films
17 APL Carrier transport and confinement in polarization-induced 3-D electron slabs: Importance of alloy scattering
16 APL Electron mobility in graded AlGaN alloys
2002
6 APL Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys