Layered and 2D materials such as graphene, chalcogenides and hBN and related families offer new physical properties in new geometric form factors. We are investigating these properties and the potential use of 2D materials in new generations of devices. We have proposed and demonstrated a few new devices with 2D materials (and some 1D too!). We are developing ways to control materials growth and doping to realize exciting devices that are held back due to the relative immaturity of layered materials control compared to established ones.
Our papers in this area in chronological order
2021
352 Phys. Rev. B Ultrafast nonlinear phonon response of few-layer hexagonal boron nitride
2020
300 Chalcogenide Layered 2D selenides and tellurides grown by MBE
2019
287 npj2Dmaterials Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors
273 Phys. Rev. Materials Rotationally aligned hexagonal boron nitride on sapphire by high-temperature molecular beam epitaxy
268 JJAP The new nitrides: layered, ferroelectric, magnetic, metallic and superconducting nitrides to boost the GaN photonics and electronics eco-system
265 APEX Thickness dependence of superconductivity in ultrathin NbS2
2018
248 TED A New Holistic Model of 2-D Semiconductor FETs
246 JCG MBE growth of few-layer 2H-MoTe2 on 3D substrates
2017
228 Nano Lett. Hot electron transistor with van der Waals base-collector heterojunction and high-performance GaN emitter
221 IEDM Two-dimensional heterojunction interlayer tunnel FET (Thin-TFET): From theory to applications
2016
218 DRC Fermi level tunability of a novel 2D crystal: Tin Diselenide (SnSe2)
215 JMM Structural Properties of (Sn,Mn)Se2 - a New 2D Magnetic Semiconductor with Potential for Spintronic Applications
213 Nature Rev. Materials Two-Dimensional Semiconductors for Transistors
212 Sc. Rep. Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth
211 ACS Nano Scanning Tunneling Microscopy and Spectroscopy of Air Exposure Effects on MBE-Grown WSe2 Monolayers and Bilayers
210 APL Materials Room temperature weak ferromagnetism in SnxMn1-xSe2 2D films grown by molecular beam epitaxy
206 JMR Controllable growth of layered selenide and telluride heterostructures and superlattices using MBE
195 Nano Lett. Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment
190 2D Materials Comprehensive structural and optical characterization of MBE-grown MoSe2 on graphite, CaF2, and graphene
186 JEDS 2-dimensional heterojunction interlayer tunneling FETs (Thin-TFETs)
184 2D Materials Carrier statistics and quantum capacitance effects on mobility extraction in 2D crystal FETs
183 APL Synthesized multiwall MoS2 nanotube and nanoribbon FETs
182 APL Materials Graphene nanoribbon FETs on wafer-scale epitaxial graphene on SiC substrates
2014
181 Nature Materials 2D Crystal Semiconductors: Intimate Contacts (News & Views)
178 DRC Vertical heterojunction of MoS2 and WSe2
177 DRC Lateral transport in two-dimensional heterojunction interlayer tunneling field effect transistor (Thin-TFET)
175 APL Exfoliated MoTe2 Field-Effect Transistors
171 APL High-performance photocurrent generation from 2D WS2 FETs
166 Phys. Rev. X Charge Scattering and Mobility in Atomically Thin Semiconductors
165 APL High-Voltage Field-Effect Transistors with Wide-Bandgap Ga2O3 Nanomembranes
164 Phys. Rev. X A Computational Study of Metal-Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors
160 JAP Single particle transport in two-dimensional heterojunction interlayer tunneling field-effect transistor (THIN-TFET)
154 JVST Electronic transport properties of top-gated epitaxial graphene nanoribbon field-effect transistors on SiC wafers
2013
152 IEDM High-Performance Few-Layer-MoS2 Field-Effect-Transistor with Record Low Contact-Resistance
151 IEDM Novel Logic Devices based on 2D Crystal Semiconductors: Opportunities and Challenges
147 ACS Nano High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems
146 IEEE Proceedings Tunneling Transistors based on Graphene and 2D Crystals
145 IEEE Proceedings Graphene reconfigurable THz optoelectronics
144 APL Interband tunneling in 2D crystal semiconductors
143 Nano Lett. Role of metal contacts in designing high-performance n-type WSe2 FETs
141 APL Graphene as transparent electrode for direct observation of hole photoemission from silicon to oxide
140 J. Low. Temp. Phys. Electrical noise and transport properties of graphene
139 ACS Nano Exciton dynamics in suspended monolayer and few-layer MoS2 2D crystals
136 TED SymFET: A proposed symmetric graphene tunneling field-effect transistor
135 APL Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors
132 Opt. Exp. Terahertz imaging employing graphene modulator arrays
2012
130 Nature Comm. High-Mobility, Low-Power Thin-Film Transistors based on multilayer MoS2 crystals
129 Nature Comm. Broadband Graphene Terahertz Modulators enabled by Intraband Transitions
128 IEDM Multilayer Transition Metal Dichalcogenide Channel Thin-Film Transistors
127 IEDM A Computational Study of Metal Contacts to Beyond-Graphene 2D Semiconductor Materials
121 APL Efficient THz electro-absorption modulation employing graphene plasmonic structures
120 Int. J. Circ. Theory Graphene nanoribbon FETs for digital electronics: experiment and modeling
118 Adv. Mat. High-Detectivity Multilayer MoS2 Phototransistors with Spectral Response from UV to IRĂ‚
116 Nano Lett. Extraordinary control of THz beam reflectance in Graphene electro-absorption modulators
115 APL Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy
113 APL Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior
111 APL Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene
105 JVST Fabrication of Top-Gated Epitaxial Graphene Nano-Ribbon FETs using Hydrogen-silsesquioxane (HSQ)
103 JAP Single-Particle Tunneling in Doped Graphene-Insulator-Graphene Junctions
2011
100 IJHSES FET THz detectors operating in the quantum capacitance limited region
99 DRC Sub-10 nm Epitaxial Graphene Nanoribbon FETs
96 DRC RF performance projections for 2D Graphene Transistors: Role of Parasitics at the Ballistic transport limit
91 Phys. Rev. B High-field transport in two-dimensional graphene
90 APL Unique prospects of graphene-based THz modulators
88 Phys. Rev. B Dielectric-environment mediated renormalization of many-body effects in a one-dimensional electron gas
87 Nano Lett. Ă‚ Studies of Intrinsic Hot Phonon Dynamics in Suspended Graphene by Transient Absorption Microscopy
86 Phys. Rev. Lett. Thermally-limited current carrying ability of graphene nanoribbons
2010
70 DRC Device Characteristics of single-layer Graphene FETs grown on Copper
66 Phys. Rev. B Effect of high-K dielectrics on charge transport in graphene-based field-effect transistors
63 JAP Temperature-dependence of hydrodynamic instabilities in 1-dimensional electron flow in semiconductors
62 APL Quantum Transport in Graphene Nanoribbons patterned by Metal Masks
2009
57 DRC High Field Transport Properties of 2D and Nanoribbon Graphene FETs
56 DRC Gigahertz Operation of Epitaxial Graphene Transistors
55 JAP Hydrodynamic instability of confined two-dimensional electron flow in semiconductors
52 JAP A Theory for the High-Field Current Carrying Capacity of 1D Semiconductors
2008
50 EDL Graphene Nanoribbon Tunnel Transistors
49 DRC Current-carrying Capacity of Long & Short Channel 2D Graphene Transistors
48 Phys. Rev. B Mobility in Semiconducting Graphene Nanoribbons: Phonon, Impurity, and Edge Roughness Scattering
45 APL Zener Tunneling in Semiconducting Nanotube and Graphene Nanoribbon p-n Junctions
35 Nano Lett. Photocurrent Polarization Anisotropy of Randomly Oriented Nanowire Networks
2007
32 JAP Tailoring the carrier mobility in semiconductor nanowires by remote dielectrics
29 Nano Lett. Polarization-sensitive photodetectors based on solution-synthesized semiconductor nanowire-based quantum-wire solids
28 APL Carrier Statistics and Quantum Capacitance in Graphene Sheets and Ribbons
27 JAP Hydrodynamic instability of one-dimensional electron flow in semiconductors
24 JAP Polarization anisotropy, frequency dependent emission, and transport properties of dielectrophoretically aligned CdSe nanowire arrays
23 Phys. Rev. Lett. Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering
2006
21 DRC Field-effect transistors and photodetectors based on solution-synthesized nanowires
15 J. Electr. Mat. Ultrathin CdSe Nanowire FETs and their Optical Properties