Complex Oxide Semiconductor Lab. - Facilities

Complex Oxide Semiconductor Lab.

Facilities

Pulsed Laser Deposition Chamber #1 with High Pressure RHEED

Model : High pressure RHEED PLD system
Base pressure: <1.0×10-8 Torr
Mass Flow Controllers (MFC) : Ar, O2 gas line
Deposition temperature : 300 K < T < 1100 K
Targets : 4 channel target rotator

Pulsed Laser Deposition Chamber #2

Model : Pulsed Laser Deposition System
Base pressure: <1.0×10-8 Torr
Mass Flow Controllers (MFC) : Ar, O2 gas line
Deposition temperature : 300 K < T < 1100 K
Targets : 4 channel target rotator

Eximer Laser (KrF: 248nm)

Model : PLD COMpex 250 (KrF Excimer Laser)
Wavelength : 248 nm
Pulse Energy : 750 mJ
max. Repetition Rate : 50 Hz
Pulse Duration (FWHM) : 20 ns

Hall effect measurement system

Model : Hall effect measurement system HMS-5000
Magnetic Flux Density : 0.51 Tesla
Temperature : 80 K ~ 350 K
Measurable sample size : 5x5 mm ~ 20x20 mm, thickness is 2 mm or less

AFM

Model : AFM NX-10
Van der Waals force, Lennard-jones potential
Mode : Contact mode/Non-contact mode/Tapping mode

Furnace

Model : Programmable High-Temp. Muffle furnaces FSC-02
Temperature Range : 500 ~ 1450 °C
Capacity : 1.9 Lit

Complex Oxide Semiconductor Lab./Department of Semiconductor Engineering, Gachon University,

1342 Seongnamdaero, Sujeong-Gu, Seongnam-Si, Gyeonggi-Do, 13120, Republic of Korea (College of Semiconductor, Room 6-17)

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