Facilities
Facilities
Pulsed Laser Deposition Chamber with High Pressure RHEED
Pulsed Laser Deposition Chamber #1 with High Pressure RHEED
Base pressure: <1.0×10-7 Torr
Mass Flow Controllers (MFC) : Ar, O2 gas line
Deposition temperature : up to 850 °C
Multiple Target Carousel Unit (up to 4 targets)
Pulsed Laser Deposition Chamber
Pulsed Laser Deposition Chamber #2
Base pressure: <1.0×10-7 Torr
Mass Flow Controllers (MFC) : Ar, O2 gas line
Deposition temperature : up to 850 °C
Multiple Target Carousel Unit (up to 4 targets)
Eximer Laser (KrF: 248nm)
Model : Excimer Laser (COMpex 205F)
Wavelength : 248 nm
Pulse Energy : 750 mJ
max. Repetition Rate : 50 Hz
Pulse Duration (FWHM) : 20 ns
Hall effect measurement system
Model : Hall Effect Measurement System (HMS-5000)
Magnetic Field : 0.55 Tesla
Temperature : 80 K ~ 350 K
Measurable sample size : 5x5 mm ~ 20x20 mm, thickness is 2 mm or less
Atomic Force Microscopy
Model : Atomic Force Microscopy (Park Systems: NX-10)
Mode : Contact mode/Non-contact mode/Tapping mode
Furnace
Model : Programmable High-Temp. Muffle furnaces (FSC-02)
Temperature Range : 500 ~ 1450 °C
Capacity : 1.9 Lit
Complex Oxide Semiconductor Lab./Department of Semiconductor Engineering, Gachon University,
1342 Seongnamdaero, Sujeong-Gu, Seongnam-Si, Gyeonggi-Do, 13120, Republic of Korea (College of Semiconductor, Room 6-17)