N. Ladplee, A. Pimpin, W. Srituravanich and N. Damrongplasit, "Volumetric Measurement of Rectangular Parcel Box Using LiDAR Depth Camera for Dimensioning and 3D Bin Packing Applications," 2022 IEEE International Conference on Consumer Electronics-Asia (ICCE-Asia), 2022, pp. 1-4, doi: 10.1109/ICCE-Asia57006.2022.9954650.
K. Sakunkawinkorn, S. Sopitpan, N. Tansangworn and N. Damrongplasit, "Towards Digital Twin Implementation of an Automatic Sorting Machine," 2022 IEEE International Conference on Consumer Electronics-Asia (ICCE-Asia), 2022, pp. 1-4, doi: 10.1109/ICCE-Asia57006.2022.9954656.
P. Supanirattisai, K. U-Yen, A. Pimpin, W. Srituravanich and N. Damrongplasit, "Smart Agriculture Monitoring and Management System using IoT-enabled Devices based on LoRaWAN," 2022 37th International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC), 2022, pp. 679-682.
J. Sakpatitha, N. Damrongplasit, A. Pimpin, T. Palaga, W. Srituravanich, "Development of Microneedle Patches for Insulin Delivery," IEEE 3rd Eurasia Conference on Biomedical Engineering, Healthcare and Sustainability (ECBIOS), 2021, pp. 16-18.
S. Yarnchalothorn, N. Damrongplasit, S. Chumkamon, and E. Hayashi, “Real-Time Instance Segmentation and Point Cloud Extraction for Japanese Food,” Society of Instrument and Control Engineers of Japan (SICE), Sept 2020.
C. Banchajarurat, K. Saengprachatanarug, N. Damrongplasit, and C. Ratanasumawong, “Volume estimation of cassava using consumer-grade RGB-D camera,” Thai Society Agricultural Engineering (TSAE), July 2020.
P. Zheng, Y. B. Liao, N. Damrongplasit, M. H. Chiang, W. C. Hsu and T. J. K. Liu, "Comparison of 10 nm GAA vs. FinFET 6-T SRAM performance and yield," 2014 Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, 2014, pp. 1-2.
N. Xu, H. Takeuchi, N. Damrongplasit, R.J. Stephenson, M. Hytha, N. Cody, R.J. Mears, T.-J. King Liu, "Oxygen-inserted SegFET: A candidate for 10-nm node system-on-chip applications," 2014 Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, 2014, pp. 1-2.
Y. B. Liao, Meng-Hsueh Chiang, N. Damrongplasit, Tsu-Jae King Liu and Wei-Chou Hsu, "6-T SRAM cell design with gate-all-around silicon nanowire MOSFETs," 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Hsinchu, 2013, pp. 1-2.
N. Xu, M. Hytha, H. Takeuchi, R.J. Stephenson, X. Huang, N. Cody, N. Damrongplasit, R.J. Mears, T.-J. King Liu, “Effectiveness of Quasi-Confinement Technology for Improving P-Channel Si and Ge MOSFET Performance,” IEEE Silicon Nanoelectronics Workshop (SNW), Kyoto, Japan, pp.13-14, 2013.
N. Damrongplasit, L. Zamudio and S. Balasubramanian, "Threshold voltage and DIBL variability modeling for SRAM and analog MOSFETs," 2012 Symposium on VLSI Technology (VLSIT), Honolulu, HI, 2012, pp. 187-188.
N. Xu, N. Damrongplasit, H. Takeuchi, R.J. Stephenson, N.W. Cody, A. Yipton, X. Huang, M. Hytha, R.J. Mears, T.-J. King Liu, "MOSFET performance and scalability enhancement by insertion of oxygen layers," 2012 International Electron Devices Meeting, San Francisco, CA, 2012, pp. 6.4.1-6.4.4.
R.J. Mears, N. Xu, N. Damrongplasit, H. Takeuchi, R.J. Stephenson, N.W. Cody, A. Yipton, X. Huang, M. Hytha, T.-J. King Liu, "Simultaneous carrier transport enhancement and variability reduction in Si MOSFETs by insertion of partial monolayers of oxygen," 2012 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, 2012, pp. 1-2.
R. Cherdchusakulchai, S. Thoumrungroje, T. Tungpanjasil, A. Pimpin, W. Srituravanich and N. Damrongplasit, "Contactless Body Measurement System Using Single Fixed-Point RGBD Camera Based on Pose Graph Reconstruction," in IEEE Access, vol. 12, pp. 84363-84373, 2024, doi: 10.1109/ACCESS.2024.3414658.
A. Pimpin, W. Srituravanich, G. Phanomchoeng, N. Damrongplasit, "Position Feedback-Control of an Electrothermal Microactuator Using Resistivity Self-Sensing Technique," Sensors 2024, 24, 3328. https://doi.org/10.3390/s24113328
N. Damrongplasit, L. Zamudio, T. J. K. Liu and S. Balasubramanian, "Threshold Voltage and DIBL Variability Modeling Based on Forward and Reverse Measurements for SRAM and Analog MOSFETs," in IEEE Transactions on Electron Devices, vol. 62, no. 4, pp. 1119-1126, April 2015.
P. Zheng, Y. B. Liao, N. Damrongplasit, M. H. Chiang and T. J. K. Liu, "Variation-Aware Comparative Study of 10-nm GAA Versus FinFET 6-T SRAM Performance and Yield," in IEEE Transactions on Electron Devices, vol. 61, no. 12, pp. 3949-3954, Dec. 2014.
W. C. Lien, N. Damrongplasit, J. H. Paredes, D. G. Senesky, T. J. K. Liu and A. P. Pisano, "4H-SiC N-Channel JFET for Operation in High-Temperature Environments," in IEEE Journal of the Electron Devices Society, vol. 2, no. 6, pp. 164-167, Nov. 2014.
N. Xu, H. Takeuchi, N. Damrongplasit, R.J. Stephenson, X. Huang, N.W. Cody, M. Hytha, R.J. Mears, T.- J. King Liu, "Extension of Planar Bulk n-Channel MOSFET Scaling With Oxygen Insertion Technology," in IEEE Transactions on Electron Devices, vol. 61, no. 9, pp. 3345-3349, Sept. 2014.
Y. B. Liao, M. H. Chiang, N. Damrongplasit, W. C. Hsu and T. J. K. Liu, "Design of Gate-All-Around Silicon MOSFETs for 6-T SRAM Area Efficiency and Yield," in IEEE Transactions on Electron Devices, vol. 61, no. 7, pp. 2371-2377, July 2014.
N. Damrongplasit, S. H. Kim, C. Shin and T. J. K. Liu, "Impact of Gate Line-Edge Roughness (LER) Versus Random Dopant Fluctuations (RDF) on Germanium-Source Tunnel FET Performance," in IEEE Transactions on Nanotechnology, vol. 12, no. 6, pp. 1061-1067, Nov. 2013.
N. Damrongplasit, N. Xu, H. Takeuchi, R.J. Stephenson, X. Huang, M. Hytha, R.J. Mears, T.-J. King Liu "Comparative Study of Uniform Versus Supersteep Retrograde MOSFET Channel Doping and Implications for 6-T SRAM Yield," in IEEE Transactions on Electron Devices, vol. 60, no. 5, pp. 1790-1793, May 2013.
N. Damrongplasit, S. H. Kim and T. J. K. Liu, "Study of Random Dopant Fluctuation Induced Variability in the Raised-Ge-Source TFET," in IEEE Electron Device Letters, vol. 34, no. 2, pp. 184-186, Feb. 2013.
N. Damrongplasit, C. Shin, S. H. Kim, R. A. Vega and T. J. King Liu, "Study of Random Dopant Fluctuation Effects in Germanium-Source Tunnel FETs," in IEEE Transactions on Electron Devices, vol. 58, no. 10, pp. 3541-3548, Oct. 2011.