Publications
*equal contribution
#correspondence
Manuscript submitted/under revision
T. D Ngo*, J.-J. Lee*, H. Bae, J.-H. Park, W. J. Yoo, M. S. Choi#, "Opposite synaptic plasticity in oxidation-layer-controlled 2D materials-based memristors for mimicking heterosynaptic plasticity", Under review.
B. S. Y. Kim#, T. D. Ngo, Y. Hassan, S. Chae, S.-G. Yoon, M. S. Choi#, "Advances and applications of oxidized two-dimensional transition metal dichalcogenides", Under review.
H. Park, H. Shin, H. Choi, N. Ali, B. Kim, M. S. Choi#, W. J. Yoo#, "Doping-free p-type electrical contacts for vertical CFET based on monolayer 2D metals", Manuscript in preparation.
2024
36. Double-Side Doped 2D TMD FET Channel
K. Lee*, B. S. Y. Kim*, M. S. Choi, N. Ali, H. Shin, D. Yue, G.-H. Kim, J. Hone, W. J. Yoo
ACS Applied Electronic Materials, 6(5), 3894-3900 (2024)
35. Plasma and Gas based Semiconductor Technologies for 2D Materials with Computational Simulation & Electronic Applications
C. Kim*, M. Kim*, S. Kim, M. Kang, M. S. Choi#, H.-U. Kim#
Advanced Electronic Materials, 10(6), 2300835 (2024)
34. Investigating the impact of oxygen surface plasma treatments on the structural and electrical properties of graphene
W. Lee, S. Kim, T. Lee, Y. Hwang, S. Lee, Y. Hassan, A. V. Hoang, E.-T. Kim, M. S. Choi#
Applied Science and Convergence Technology, 33, 7-12 (2024)
33. Analysis of p-type doping in graphene induced by monolayer oxidized TMDs
T. Huynh*, T. D. Ngo*, H. Choi, M. S. Choi, W. Lee, T. D. Nguyen, T. T. Tran, K. Lee, J. Y. Hwang, J. Kim, W. J. Yoo
ACS Applied Materials & Interfaces, 16, 3694 (2024)
2023
32. Self-Aligned Top-Gate Structure in High-Performance 2D p-FETs via van der Waals Integration and Contact Spacer Doping
T. D. Ngo, T. Huynh, T. Taniguchi, K. Watanabe, M. S. Choi#, W. J. Yoo#
Nano Letters, 23, 11345-11352 (2023)
31. Machine Learning-based Prediction of Atomic Layer Control for MoS2 via Reactive Ion Etcher
C. Kim, S. Lee, M. Kim, M. S. Choi, T. Kim, H.-U. Kim
Applied Science and Convergence Technology, 32, 106-109 (2023)
Featured as the cover article and the best paper
30. Modulation of Contact Resistance of Dual-Gated MoS2 FETs Using Fermi-Level Pinning-Free Antimony Semi-Metal Contacts
T. D. Ngo, T. Huynh, H. Jung, F. Ali, J. Jeon, M. S. Choi#, W. J. Yoo#
Advanced Science, 10, 2301400 (2023)
29. Ambipolar charge-transfer graphene plasmonic cavities
B. S. Y. Kim*, A. Sternbach*, M. S. Choi*, Z. Sun, F. L. Ruta, Y. Shao, A. McLeod, L. Xiong, Y. Dong, T. S. Chung, A. Rajendran, S. Liu, A. Nipane, S. H. Chae, A. Zangiabadi, X. Xu, A. J. Millis, P. J. Schuck, C. R. Dean, J. C. Hone, D. N. Basov
Nature Materials, 22, 838-843 (2023) [arxiv link]
28. Boosting hole migration through oxygen species–functionalized graphene interlayer for PEDOT:PSS-based optoelectronic devices with enhanced efficiency and long-term durability
U. Baeck, N. D. Nguyen, M. S. Choi, J. Kim, J. Y. Lee, Y.-S. Kim, J. K. Kim
Applied Surface Science, 615, 156383 (2023)
27. Effects of oxygen plasma treatment on Fermi-level pinning and tunneling at the metal interface of WSe2 FETs
K. Lee, T. D. Ngo, S. Lee, H. Shin, M. S. Choi, J. Hone, W. J. Yoo
Advanced Electronic Materials, 9, 2200955 (2023)
2022
26. Self-Powered 2D MoS2/WOx/WSe2 Heterojunction Photodetector Realized by Oxygen Plasma Treatment
H. Shin, M. Taqi, F. Ali, S. Lee, M. S. Choi, C. Kim, B.-H. Lee, X. Liu, J. Sun, B. Oh, W. J. Yoo
Advanced Materials Interfaces, 9, 2201785 (2022)
25. Selective electron beam patterning of oxygen doped WSe2 for seamless lateral junction transistors
T. D. Ngo*, M. S. Choi*, M. Lee, F. Ali, Y. Hassan, N. Ali, S. Liu, C. Lee, J. Hone, W. J. Yoo
Advanced Science, 9, 2202465 (2022)
24. Recent progress in 1D contacts for 2D material-based devices
M. S. Choi*, N. Ali*, T. D. Ngo, H. Choi, B. Oh, H. Yang, W. J. Yoo
Advanced Materials, 34, 2202408 (2022)
23. Fermi-level pinning dependent 2D semiconductor devices: challenges and prospects
X. Liu*, M. S. Choi*, E. Hwang, W. J. Yoo, J. Sun
Advanced Materials, 34, 218425 (2022)
22. Anomalously persistent p-type behavior of WSe2 field-effect transistors by oxidized edge-induced Fermi-level pinning
T. D. Ngo*, M. S. Choi*, M. Lee, F. Ali, W. J. Yoo
Journal of Materials Chemistry C, 10, 846-853 (2022)
2021
21. High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide
M. S. Choi*, A. Nipane*, B. S. Y. Kim*, M. E. Ziffer, I. Datta, A. Borah, Y. Jung, B. Kim, D. Rhodes, A. Jindal, Z. A. Lamport, M. Lee, A. Zangiabadi, Maya N. Nair, T. Taniguchi, K. Watanabe, I. Kymissis, A. N. Pasupathy, M. Lipson, X. Zhu, W. J. Yoo, J. Hone, J. T. Teherani
Nature Electronics, 4, 731-739 (2021) Featured as the cover article
20. Analytical measurements of contact resistivity in two-dimensional WSe2 field-effect transistors
I. Moon*, M. S. Choi*, S. Lee, A. Nipane, J. Hone, W. J. Yoo
2D Materials, 8, 045019 (2021)
19. Chemical dopant-free doping by annealing and electron beam irradiation on 2D materials
M. S. Choi*, M. Lee*, T. D. Ngo, J. Hone, W. J. Yoo
Advanced Electronic Materials, 7, 2100449 (2021) Featured as the frontispiece
18. Low-resistance p-type ohmic contacts to ultra-thin WSe2 by using a monolayer dopant
A. Borah, A. Nipane, M. S. Choi, J. Hone, J. T. Teherani
ACS Applied Electronic Materials, 3, 2941-2947 (2021)
17. Damage-free atomic layer etch of WSe2: A platform for fabricating clean 2D devices
A. Nipane*, M. S. Choi*, P. J. Sebastian, K. Yao, A. Borah, P. Deshmukh, Y. Jung, B. Kim, A. Rajendran, K. W.C. Kwock, A. Zangiabadi, P. J. Schuck, V. M. Menon, W. J. Yoo, J. Hone, J. T. Teherani
ACS Applied Materials and Interfaces, 13, 1930-1942 (2021)
16. Electrical characterization of 2D materials-based field-effect transistors
S. B. Mitta*, M. S. Choi*, A. Nipane*, F. Ali, C. Kim, J. T. Teherani, J. Hone, W. J. Yoo
2D Materials, 8, 012002 (2021)
~2019
15. Transferred via contacts as a platform for ideal two-dimensional transistors
Y. Jung*, M. S. Choi*, A. Nipane, A. Borah, B. Kim, A. Zangiabadi, T. Taniguchi, K. Watanabe, W. J. Yoo, J. Hone, J. T. Teherani
Nature Electronics, 2(5), 187-194 (2019) Featured as the cover article
14. Homogeneous molybdenum disulfide tunnel diode formed via chemical doping
X. Liu*, D. Qu*, M. S. Choi, C. Lee, H. Kim, W. J. Yoo
Applied Physics Letters, 112(18), 183103 (2018)
13. Electrically Driven Reversible Phase Changes in Layered In2Se3 Crystalline Film
M. S. Choi*, B. Cheong*, C. H. Ra*, S. Lee, J. Bae, S. Lee, G. Lee, C. Yang, J. Hone, W. J. Yoo
Advanced Materials, 29(42) 1703568 (2017)
12. Fermi level pinning at electrical metal contacts of monolayer molybdenum dichalcogenides
C. Kim*, I. Moon*, D. Lee, M. S. Choi, F. Ahmed, S. Nam, Y. Cho, H. Shin, S. Park, W. J. Yoo
ACS Nano, 11(2), 1588-1596 (2017)
11. High Electric Field Carrier Transport and Power Dissipation in Multilayer Black Phosphorus Field Effect Transistor with Dielectric Engineering
F. Ahmed, Y. D. Kim, M. S. Choi, X. Liu, D. Qu, Z. Yang, J. Hu, I. P. Herman, J. Hone, W. J. Yoo
Advanced Functional Materials, 27(4), 1604025 (2017)
10. Effects of plasma treatment on surface properties of ultrathin layered MoS2
S. Kim*, M. S. Choi*, D. Qu, C. H. Ra, X. Liu, M. Kim, Y. J. Song, W. J. Yoo
2D materials, 3(3), 035002 (2016)
9. Effects of Plasma Treatment on Contact Resistance and Sheet Resistance of Graphene FET
C. H. Ra, M. S. Choi, D. Lee, W. J. Yoo
Journal of Korean Institute of Surface Engineering, 49(2), 152-158 (2016)
8. Passivated ambipolar black phosphorus transistors
D. Yue, D. Lee, Y. D. Jang, M. S. Choi, H. J. Nam, D. Jung, W. J. Yoo
Nanoscale, 8(25), 12773-12779 (2016)
7. Carrier transport at the metal-MoS2 interface
F. Ahmed, M. S. Choi, X. Liu, W. J. Yoo
Nanoscale, 7(20), 9222-9228 (2015)
6. Lateral MoS2 p-n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics
M. S. Choi, D. Qu, D. Lee, X. Liu, K. Watanabe, T. Taniguchi, W. J. Yoo
ACS Nano, 8(9), 9332-9340 (2014)
5. Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors
H. Li, D. Lee, M. S. Choi, D. Qu, X. Liu, C. H. Ra, W. J. Yoo
Scientific Reports, 4, 4041 (2014)
4. High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure
S. H. Lee*, M. S. Choi*, J. Lee, C. H. Ra, X. Liu, E. Hwang, J. H. Choi, J. Zhong, W. Chen, W. J. Yoo
Applied Physics Letters, 104(5), 053103 (2014)
3. Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures
G. Lee*, Y. Yu*, X. Cui, N. Petrone, C. Lee, M. S. Choi, D. Lee, C. Lee, W. J. Yoo, K. Watanabe, T. Taniguchi, C. Nuckolls, P. Kim, J. Hone
ACS Nano, 7(8), 7931-7936 (2013) Featured as the cover article
2. Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
M. S. Choi*, G. Lee*, Y. Yu*, D. Lee, S. H. Lee, P. Kim, J. Hone, W. J. Yoo
Nature communications, 4, 1624 (2013)
1. Plasma treatments to improve metal contacts in graphene field effect transistor
M. S. Choi, S. H. Lee, W. J. Yoo
Journal of Applied Physics, 110(7), 073305 (2011)
patents
유원종, 오병두, 최민섭, 신호성, "적외선 검지소자 및 그 제조방법", 대한민국 특허 출원 (10-2022-0117583), 2022.09.19.
J. Hone, J. T. Teherani, A. Nipane, M. S. Choi, Y. Jung, A. Borah, “Systems and methods for universal degenerate p-type doping with monolayer tungsten oxyselenide (TOS)”, Patent application publication in the USA (Pub. No. US 2021/0328021), 2021.10.21.
최민섭, 유원종, 곡덕순, 라창호, 유효지, 이승환, 이지아, “2차원 물질을 이용한 수평형 다이오드를 포함하는 전자소자 제조방법”, 대한민국 특허 등록 (10-2216542), 2021.02.09.
최준희, 유원종, 이승환, 최민섭, 유효지, 이지아, “터널링 소자 및 그 제조방법”, 대한민국 특허 등록 (10-2100415), 2020.04.07.
M. S. Choi, W. J. Yoo, D. Qu, C. H. Ra, X. Liu, S. H. Lee, J. Lee, “Electronic device including laterally arranged P-type and N-type regions in a two dimensional (2D) material layer and method of manufacturing the same”, Patent registration in the USA (US9647166B2), 2017.05.09.
유원종, 김형섭, 류정진, 문인용, 이창민, 최민섭, “인버터 소자 및 이의 제조 방법”, 대한민국 특허 등록 (10-1693663), 2017.01.02.
J. H. Choi, W. J. Yoo, S. H. Lee, M. S. Choi, X. Liu, J. Lee, “Tunneling device and method of manufacturing the same”, Patent registration in the USA (US9269775B2), 2016.02.23.
심전자, 유원종, 이화민, 최민섭, 최재영, “2차원 소재 적층 플렉서블 광센서”, 대한민국 특허 등록 (10-1532310), 2015.06.23.