Publication  期刊

206. Structural, Light Emitting, and Photoelectrical Properties of Multilayered 2D Mixed Alloys of Gallium Monochalcogenides
Ching-Hwa Ho*, Luthviyah Choirotul Muhimmah

Materials Science & Engineering R-Reports, Vol. 161, p. 100867, 2024.12. (EI/SCI, IF 31.6)

205. Axially-Polarized Excitonic Series and Anisotropic van der Waals Stacked Heterojunction in a Quasi-1D Layered Transition-Metal Trichalcogenide
Adzilah Shahna Rosyadi, Ying-Xuan Lin, Yu-Hung Peng, Ching-Hwa Ho*

Advanced Science, Vol. 11, Iss. 38, p. 2406781, 2024.10. (EI/SCI, IF 14.3)

204. Manipulating Ferroelectric Polarization and Spin Polarization of 2D CuInP2S6 Crystals for Photocatalytic CO2 Reduction
Chun-Hao Chiang, Cheng-Chieh Lin, Yin-Cheng Lin, Chih-Ying Huang, Cheng-Han Lin, Ying-Jun Chen, Ting-Rong Ko, Heng-Liang Wu, Wen-Yen Tzeng, Sheng-Zhu Ho, Yi-Chun Chen*, Ching-Hwa Ho*, Cheng-Jie Yang, Zih-Wei Cyue, Chung-Li Dong, Chih-Wei Luo, Chia-Chun Chen*, Chun-Wei Chen*

Journal of The American Chemical Society, Vol. 146, Iss. 33, pp. 23278-23288, 2024.07. (EI/SCI, IF 14.4)

203. Structural, Optical and Electrical Properties in Multilayer SnS2(1-x)Se2(x) Compounds for Energy, Thermoelectric and Photocatalytic Application
Thalita Maysha Herninda, Zi-Ying Chen, Ching-Hwa Ho*

Materials Today Advances, Vol. 22, p. 100498, 2024.06. (EI/SCI, IF 8.1) 

202. Light Emission, Structure-Phase Evolution, and Photocatalytic Behavior in Full-Series Multilayered GaTe1−xSx (0 ≤ x ≤ 1) with Direct-Transition Edge
Luthviyah Choirotul Muhimmah, Yu-Hung Peng, Ching-Hwa Ho*

Materials Today Advances, Vol. 21, p. 100450, 2024.03. (EI/SCI, IF 8.1) 

201. Phosphorus-Doped Multilayer In6Se7: The Study of Structural, Electrical, and Optical Properties for Junction Device
Yu-Hung Peng, Luthviyah Choirotul Muhimmah, Ching-Hwa Ho*

JACS Au, Vol. 4, Iss. 1, pp. 58-71, 2024.01. (EI/SCI, IF 8.5) (selected as a cover story page) 

200. Engineering 2D Material Exciton Lineshape with Graphene/h-BN Encapsulation
S. Y. Woo, F. Shao, A. Arora, R. Schneider, N. Wu, A. J. Mayne, Ching-Hwa Ho, M. Och, C. Mattevi, A. Reserbat-Plantey, A´ lvaro Moreno, H. H. Sheinfux, K. Watanabe, T. Taniguchi, S. M. de Vasconcellos, F. H. L. Koppens, Z. Niu, O. St´ephan, M. Kociak, F. J. Garc´ıa de Abajo, R. Bratschitsch, A. Koneˇcna´, L. H. G. Tizei

Nano Letters, Vol. 24, No. 12, pp. 3678-3685, 2024.03. (EI/SCI, IF 9.6) 

199. Cathodoluminescence Emission and Electron Energy Loss Absorption from a 2D Transition Metal Dichalcogenide in van der Waals Heterostructures
N. Bonnet, J. Baaboura, F. Castioni, S. Y. Woo, Ching-Hwa Ho, K. Watanabe, T. Taniguchi, L. H. G. Tizei, T. Coenen

Nanotechnology, Vol. 35, No. 40, p. 405702, 2024.07. (EI/SCI, IF 2.9) 

198. Visible White-Light Emission and Carrier Dynamics Observed in Full-Series GaSe1-xSx (0 ≤ x ≤ 1) Multilayers
Ching-An Chuang, Feng-Han Yu, Bo-Xian Yeh, Anna Milatul Ummah, Adzilah Shahna Rosyadi, Ching-Hwa Ho*

Advanced Optical Materials, Vol. 11, Iss. 23, p. 2301032, 2023.12. (EI/SCI, IF 8.0) 

197. Structural, Opto-electrical, and Band-edge Properties of Full-series Multilayer SnS1-xSex (0 ≤ x ≤ 1) Compounds with Strong In-plane Anisotropy
Thalita Maysha Herninda, Chin En Hsu, Hung-Chung Hsueh*, Ching-Hwa Ho*

Materials Today Advances, Vol. 18, p. 100379, 2023.06. (EI/SCI, IF 8.1) 

196. Silicon-van der Waals Heterointegration for CMOS-compatible Logic-in-memory Design
M.-P. Lee, C. Gao, M.-Y. Tsai, C.-Y. Lin, F.-S. Yang, H.-Y. Sung, C. Zhang, W. Li, J. Li, J. Zhang, K. Watanabe, T. Taniguchi, K. Ueno, K. Tsukagoshi, Ching-Hwa Ho, J. Chu, P.-W. Chiu, M. Li, W.-W. Wu, and Y.-F. Lin

Science Advances, Vol. 9, No. 49, p. eadk1597, 2023.12. (EI/SCI, IF 11.7) 

195. Structure, Property and Magneto-Optical Interaction of Wide-Band-Gap Layered Magnetism near the Néel Temperature with Antiferromagnetic to Paramagnetic Transition
Anna Milatul Ummah, Yu-Hung Peng, Ching-Hwa Ho*

FlatChem, Vol. 41, p. 100536, 2023.09. (EI/SCI, IF 5.9) 

194. A reconfigurable transistor and memory based on a two dimensional heterostructure and photoinduced trapping
Meng-Yu Tsai, Chia-Tse Huang, Che-Yi Lin, Mu-Pai Lee, Feng-Shou Yang, Mengjiao Li, Yuan-Ming Chang, Kenji Watanabe, Takashi Taniguchi, Ching-Hwa Ho, Wen-Wei Wu, Mahito Yamamoto, Jiunn-Lin Wu, Po-Wen Chiu, Yen-Fu Lin

Nature Electronics, Vol. 6, pp. 755-764, p. eadk1597, 2023.10. (EI/SCI, IF 33.7) 

193. Biexciton and Singlet Trion Upconvert Exciton Photoluminescence in a MoSe2 Monolayer Supported by Acoustic and Optical K-Valley Phonon
Joanna Jadczak, Joerg Debus, Justyna Olejnik, Ching-Hwa Ho, Kenji Watanabe, Takashi Taniguchi, Leszek Bryja

The Journal of Physical Chemistry Letters, Vol. 14, No. 39, pp. 8702-8708, 2023.09. (EI/SCI, IF 4.8) 

192. Near-Infrared to Red-Light Emission and Carrier Dynamics in Full Series Multilayer GaTe1-xSex (0 ≤ x ≤ 1) with Structural Evolution
Luthviyah Choirotul Muhimmah, Yu-Hong Peng, Feng-Han Yu, Ching-Hwa Ho*

npj 2D Materials and Applications, Vol. 7, p. 3 (14 pp), 2023.01. (EI/SCI, IF 9.1) 

191. Van der Waals Heterostructure Mid-Infrared Emitters with Electrically Controllable Polarization States and Spectral Characteristics
Po-Liang Chen, Tian-Yun Chang, Pei-Sin Chen, Alvin Hsien-Yi Chan, Adzilah Shahna Rosyadi, Yen-Ju Lin, Pei-Yu Huang, Jia-Xin Li, Wei-Qing Li, Chia-Jui Hsu, Neil Na, Yao-Chang Lee, Ching-Hwa Ho, Chang-Hua Liu

ACS Nano, Vol. 17, No. 11, pp.10181-10190, 2023.05. (EI/SCI, IF 15.8) 

190. Resonant Exciton Scattering Reveals Raman Forbidden Phonon Modes in Layered GeS
Joanna Jadczak, Janusz Andrzejewski, Joerg Debus, Ching-Hwa Ho, Leszek Bryja

The Journal of Physical Chemistry Letters, Vol. 14, No. 17, pp. 3986-3994, 2023.04. (EI/SCI, IF 4.8) 

189. Formation of van der Waals Stacked p-n Homojunction Optoelectronic Device of Multilayered ReSe2 by Cr Doping
Adzilah Shahna Rosyadi, Alvin Hsien-Yi Chan, Jia-Xin Li, Chang-Hua Liu, Ching-Hwa Ho*

Advanced Optical Materials, Vol. 10, Iss. 13, p. 2200392, 2022.07. (EI/SCI, IF 8.0) 

188. Internal Built-In Electric Fields at Organic Inorganic Interfaces of 2D Ruddlesden Popper Perovskite Single Crystals
Cheng-Chieh Lin, Kai-Di Yang, Min-Chuan Shih, Shao-Ku Huang, Tzu-Pei Chen, Hung-Chang Hsu, Ching-An Chuang, Chih-Ying Huang, Lucas Wang, Chia-Chun Chen, Ching-Hwa Ho*, Ya-Ping Chiu*, Chun-Wei Chen*

ACS Applied Materials and Interfaces, Vol. 14, Iss. 17, pp. 19818-19825, 2022.05. (EI/SCI, IF 8.3) 

187. Rydberg Polaritons in ReS2 Crystals
A. Coriolano, L. Polimeno, M. Pugliese, A. Cannavale, D. Trypogeorgos, A. Di Renzo, A. Rizzo, D. Ballarini, G. Gigli, V. Maiorano, A. S. Rosyadi ,C. A. Chuang, Ching-Hwa Ho, L. De Marco, D. Sanvitto, M. De Giorgi

Science Advances, Vol. 8, Iss. 47, p. eadd8857, 2022.11. (EI/SCI, IF 11.7) 

186. Van der Waals Heterostructure Photodetectors with Bias-Selectable Infrared Photoresponses
Tian-Yun Chang, Po-Liang Chen, Pei-Sin Chen, Wei-Qing Li, Jia-Xin Li, Ming-Yuan He, Jen-Te Chao, Ching-Hwa Ho, Chang-Hua Liu

ACS Applied Materials and Interfaces, Vol. 14, Iss. 28, pp. 32665−32674, 2022.07. (EI/SCI, IF 8.3) 

185. Upconversion photoluminescence excitation reveals exciton-trion and exciton-biexciton coupling in hBN/WS2/hBN van der Waals heterostructures
Ewa Żuberek, Martyna Majak1, Jakub Lubczyński, Joerg Debus, Kenji Watanabe, Takashi Taniguchi, Ching-Hwa Ho, Leszek Bryja and Joanna Jadczak

Scientific Reports, Vol. 12, p. 13699, 2022.08. (EI/SCI, IF 3.8) 

184. Molybdenum disulfide homogeneous junction diode fabrication and rectification characteristics
Wei Li, Jeng-Yu Ke, Yun-Xuan Ou-Yang, Ying-Xuan Lin, Ching-Hwa Ho, Kuei-Yi Lee, Shunjiro Fujii, Shin-ichi Honda, Hideaki Okado and Masamichi Naitoh

Japanese Journal of Applied Physics, Vol. 61, p. 086504, 2022.07. (EI/SCI, IF 1.5) 

183. An All Two-dimensional Vertical Heterostructure Graphene/CuInP2S6/MoS2 for Negative Capacitance Field Effect Transistor
Adeel Liaqat , Yiheng Yin, Sabir Hussain, Wen Wen, Juanxia Wu, Yuzheng Guo*, Chunhe Dang, Ching-Hwa Ho*, Zheng Liu, Peng Yu, Zhihai Cheng, and Liming Xie*

Nanotechnology, Vol. 33, No. 12, p. 125703, 2022.03. (EI/SCI, IF 2.9) 

182. Thermoreflectance Characterization of the Band-Edge Excitons Observed in Multilayered CuInP2S6
Ching-Hwa Ho*, Shiun-Fang Hu, Hong-Wei Chang

FlatChem, Vol. 29, p. 100290, 2021.09. (EI/SCI, IF 5.9) 

181. The Band-Edge Excitons Observed in Few-Layer NiPS3
Ching-Hwa Ho*, Tien-Yao Hsu, L. C. Muhimmah

npj 2D Materials and Applications, Vol. 5, p. 8 (10 pp), 2021.01. (EI/SCI, IF 9.1) 

180. Upconversion of Light into Bright Intra-Valley Excitons via Dark Inter-Valley Excitons in hBN-Encapsulated WSe2 Monolayers
Joanna Jadczak, Mikhail Glazov, Joanna Kutrowska-Girzycka, Janina J. Schindler, Joerg Debus, Ching-Hwa Ho, Kenji Watanabe, Takashi Taniguchi, Manfred Bayer, and Leszek Bryja

ACS Nano, Vol. 15, Iss. 12, pp. 19165-19174, 2021.12. (EI/SCI, IF 15.8) 

179. Dual Phase Two-Color Emission Observed in van der Waals GaTe Planes
L. C. Muhimmah and Ching-Hwa Ho*

Applied Surface Science, Vol. 542, p 148593, 2021.03. (EI/SCI, IF 6.3) 

178. The Study of Optical Properties of III2-VI3 Defect Semiconductor Group Compounds Ga2S3, Ga2Se3, In2S3 and In2Se3
Ching-Hwa Ho*, X. R. Lai, C. A. Chuang, W. L. Kuo, K. K. Tiong

Advanced Photonics Research, Vol. 2, p. 2000110 (8pp), 2021.03. (EI/SCI, IF 3.7) 

177. Photoactive Electro-controlled Visual Perception Memory for Emulating Synaptic Metaplasticity and Hebbian Learning
Meng Yu Tsai, Ko Chun Lee, Che Yi Lin, Yuan Ming Chang, Kenji Watanabe, Takashi Taniguchi, Ching Hwa Ho, Chen Hsin Lien, Po Wen Chiu, and Yen Fu Lin

Advanced Functional Materials, Vol. 31, p. 2105345, 2021.07. (EI/SCI, IF 18.5) 

176. Pressure induced structural phase crossover of a GaSe epilayer grown under screw dislocation driven mode and its phase recovery
N. Q. Diep, S. K. Wu, C. W. Liu, S. H. Huynh, W. C. Chou, C. M. Lin, D. Z. Zhang, and C. H. Ho

Scientific Reports, Vol. 11, p. 19887, 2021.10. (EI/SCI, IF 3.8) 

175. Probing of negatively charged and neutral excitons in monolayer MoS2
J. Jadczak, J. Kutrowska-Girzycka, M. Bieniek, T. Kazimierczuk, P. Kossacki, J. J. Schindler, J. Debus, K. Watanabe, T. Taniguchi, C. H. Ho, A. Wojs, P. Hawrylak and L. Bryja

Nanotechnology, Vol. 32, No. 14, p. 145717 (10 pp), 2021.04. (EI/SCI, IF 2.9) 

174. Carrier-capture-assisted Optoelectronics Based on van der Waals Materials to Imitate Medicine-acting Metaplasticity
Qianfan Nie, Caifang Gao, Feng-Shou Yang, Ko-Chun Lee, Che-Yi Lin, Xiang Wang, Ching-Hwa Ho, Chen-Hsin Lien, Shu-Ping Lin, Mengjiao Li, Yen-Fu Lin, Wenwu Li, Zhigao Hu and Junhao Chu

npj 2D Materials and Applications, Vol. 5, p. 60 (9 pp), 2021.06. (EI/SCI, IF 9.1) 

173. Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van derWaals hBN/WSe2/hBN Heterostructure by Photoluminescence Excitation Experiments
J. Jadczak, J. Kutrowska-Girzycka, J. J. Schindler, J. Debus, K. Watanabe, T. Taniguchi, Ching-Hwa Ho, L. Bryja

Materials, Vol. 14, No. 2, p. 399 (12 pp), 2021.01. (EI/SCI, IF 3.1) 

172. Inverse Paired-pulse Facilitation in Neuroplasticity based on Interface boosted Charge Trapping Layered Electronics
K. C. Lee, M. Li, Y. H. Chang, S. H. Yang, C. Y. Lin, Y. M. Chang, F. S. Yang, K. Watanabe, T. Taniguchi, C. H. Ho, C. H. Lien, S. P. Lin, P. W. Chiu, Y. F. Lin

Nano Energy, Vol. 77, p. 105258, 2020.11. (EI/SCI, IF 16.8) 

171. Multilayer GaSe/InSe Heterointerface-Based Devices for Charge Transport and Optoelectronics
Y. Y. Lu, C. R. Guo, H. L. Yeh, H. W. Chen, C. C. Kuo, J. H. Hsu, J. Jhou, Y. T. Huang, S. H. Hsieh, C. H. Chen, C. H. Ho, R. Sankar, and F. C. Chou

ACS Appl. Nano Mater., Vol. 3, Iss. 12, pp. 11769-11776, 2020.12. (EI/SCI, IF 5.3) 

170. High-Responsivity Broad-Band Sensing and Photoconduction Mechanism in Direct-Gap α-In2Se3 Nanosheet Photodetectors
A. Manickam, H. F. Hsie, F. C. Liu, C. Y. Chen, K. Y. Lee, L. C. Chao, C. H. Ho, R. S. Chen

Nanotechnology, Vol. 31, No. 46, p. 465201, 2020.11. (EI/SCI, IF 2.9) 

169. Tuning Interface Barrier in 2D BP/ReSe2 Heterojunctions in Control of Optoelectronic Performances and Energy Conversion Efficiencies
Che-Chi Shih, Ming-Huei Huang, Chi-Kai Wan, Wen-Bin Jian*, Kimitoshi Kono, Yen-Fu Lin, and Ching-Hwa Ho*

ACS Photonics, Vol. 7, Iss. 10, pp. 2886-2895, 2020.10. (EI/SCI, IF 6.5) 

168. Ga2Se3 Defect Semiconductor: The Study of Direct Band Edge and Optical Properties
Ching-Hwa Ho*

ACS Omega, Vol. 5, Iss. 29, pp. 18527-18534, 2020.07. (EI/SCI, IF 3.7) 

167. Oxidation-boosted Charge Trapping in Ultra-sensitive van der Waals Materials for Artificial Synaptic Features
Feng-Shou Yang, Mengjiao Li, Mu-Pai Lee, I-Ying Ho, Jiann-Yeu Chen, Haifeng Ling, Yuanzhe Li, Jen-Kuei Chang, Shih-Hsien Yang, Yuan-Ming Chang, Ko-Chun Lee, Yi-Chia Chou, Ching-Hwa Ho, Wenwu Li, Chen-Hsin Lien, and Yen-Fu Lin

Nature Communications, Vol. 11, p. 2972, 2020.06. (EI/SCI, IF 14.7) 

166. Study of Structural, Thermoelectric, and Photoelectric Properties of Layered Tin Monochalcogenides SnX (X=S, Se) for Energy Application
Ching-Hwa Ho*, Wen-Yao Lin, Liang-Chiun Chao, Kuei-Yi Lee, Jun Ingaki, Hung-Chung Hsueh*

ACS Applied Energy Materials, Vol. 3, Iss. 5, pp. 4896-4905, 2020.05. (EI/SCI, IF 5.4) 

165. Optical and Thermoelectric Properties of Surface-Oxidation Sensitive Layered Zirconium Dichalcogenides ZrS2-xSex (x=0, 1, 2) Crystals Grown by Chemical Vapor Transport
Thalita Maysha Herninda, Ching-Hwa Ho*

Crystals, Vol. 10, No. 4, p. 327, 2020.04. – A 10 Years Journey Issue. (EI/SCI, IF 2.4)
XRD patterns of ZrS2 and ZrSSe accepted by ICDD in JCPDS PDF 110437 & 110439.  

164. Nanowire-Grids Polarization and Polarized Excitonic Emission Observed in Multilayer GaTe
Ching-Hwa Ho*, Mei-Chan Chiou, Thalita Maysha Herninda

The Journal of Physical Chemistry Letters, Vol. 11, No. 3, pp. 608-617, 2020.02. (EI/SCI, IF 4.8) 

163. Multifunctional full-visible-spectrum optoelectronics based on a van der Waals heterostructure
S. H. Yang, K. C. Lee, M. Y. Tsai, Y. M. Chang, C. Y. Lin, F. S. Yang, K. Watanabe, T. Taniguchi, C. H. Lien, C. H. Ho, M. Li, Y. F. Lin, Y. C. Lai

Nano Energy, Vol. 66, p. 104107, 2019.12. (EI/SCI, IF 16.8) 

162. High-Mobility InSe Transistors: the Nature of Charge Transport
T. H. Tsai, F. S. Yang, P. H. Ho, Z. Y. Liang, C. H. Lien, C. H. Ho, Y. F. Lin, P. W. Chiu

ACS Applied Materials & Interfaces, Vol. 11, No. 39, pp. 35969-35976, 2019.09. (EI/SCI, IF 8.3) 

161. Temperature-dependent Ultraviolet Photoluminescence in Hierarchical Zn, ZnO and ZnO/Zn Nanostructures
H. S. Chou, K. D. Yang, S. H. Xiao, Ranjit A. Patil, C. C. Lai, W. C. V. Yeh, C. H. Ho, Y. Liou, and Y. R. Ma

Nanoscale, Vol. 11, No. 28, pp. 13385-13396, 2019.06. (EI/SCI, IF 5.8) 

160. Few-layer ReS2(1-x)Se2x nanoflakes for noise-like pulse generation in mode-locked ytterbium-doped fiber laser
M. Ma, W. Wen, Y. Zhang, C. Dou, J. Wang, L. Xie, C. H. Ho, Z. Wei

Journal of Materials Chemistry C, Vol. 7, No. 23, pp. 6900-6904, 2019.06. (EI/SCI, IF 5.7) 

159. Effect of Cr on The Structure and Property of Mo1-xCrxSe2 (0 ≤ x ≤ 0.2) and Cr2Se3
Ching-Hwa Ho*, Xiang-Ru Lai

ACS Applied Electronic Materials, Vol. 1, No. 3, pp. 370-378, 2019.03. (EI/SCI, IF 4.3) 

158. Analog Circuit Applications Based on all-2D Ambipolar ReSe2 Field-Effect Transistors
K. C. Lee, S. H. Yang, Y. S. Sung, Y. M. Chang, C. Y. Lin, F. S. Yang, M. Li, K. Watanabe, T. Taniguchi, Ching-Hwa Ho*, C. H. Lien*, Y. F. Lin*

Advanced Functional Materials, Vol. 29, Iss. 22, p. 1809011, 2019.05. (EI/SCI, IF 18.5)

157. Complete-Series Excitonic Dipole Emissions in Few Layer ReS2 and ReSe2 Observed by Polarized Photoluminescence Spectroscopy
Ching-Hwa Ho*, Zhan-Zhi Liu

Nano Energy, Vol. 56, pp. 641-650, 2019.029. (EI/SCI, IF 16.8) 

156. Ternary ReS2(1-x)Se2x alloy saturable absorber for passively Q-switched and Mode-locked Erbium-doped all-fiber lasers
C. Dou, W. Wen, J. Wang, M. Ma, L. Xie, Ching-Hwa Ho, Z. Wei

Photonics Research, Vol. 7, No. 3, pp. 283-288, 2019.03. (EI/SCI, IF 6.6) 

155. (Cover-Inside) InSe Tribotronic Transistors: Low-Voltage Operational, Low-Power Consuming, and High Sensitive Tactile Switch Based on 2D Layered InSe Tribotronics (Adv. Funct. Mater. 19/2019)
M. Li, F. S. Yang, Y. C. Hsiao, C. Y. Lin, H. M. Wu, S. H. Yang, H. R. Li, C. H. Lien, Ching-Hwa Ho, H. J. Liu, W. Li, Y. F. Lin, Y. C. Lai

Advanced Functional Materials, Vol. 29, No. 19, p. 1970125, 2019.05. (EI/SCI, IF 18.5) 

154. Low-Voltage Operational, Low-Power Consuming, and High Sensitive Tactile Switch Based on 2D Layered InSe Tribotronics
M. Li, F. S. Yang, Y. C. Hsiao, C. Y. Lin, H. M. Wu, S. H. Yang, H. R. Li, C. H. Lien, Ching-Hwa Ho, H. J. Liu, W. Li, Y. F. Lin, Y. C. Lai

Advanced Functional Materials, Vol. 29, No. 19, p. 1809119, 2019.05. (EI/SCI, IF 18.5) 

153. High Mobilities in Layered InSe Transistors with Indium Encapsulation Induced Surface Charge Doping
M. Li, C. Y. Lin, S. H. Yang, Y. M. Chang, J. K. Chang, F. S. Yang, C. Zhong, W. B. Jian, C. H. Lien, Ching-Hwa Ho, H. J. Liu, R. Huang, W. Li, Y. F. Lin, J. Chu

Advanced Materials, Vol. 30, Iss. 44, p. 1803690, 2018.11. (EI/SCI, IF 27.4) 

152. In-Plane Axially Enhanced Photocatalysis by Re4 Diamond Chains in Layered ReS2
P. S. Parasuraman, J. H. Ho, M. H. Lin, C. H. Ho*

The Journal of Physical Chemistry C, Vol. 122, No. 32, pp. 18776-18784, 2018.08. (EI/SCI, IF 3.3) 

151. The Study of Near-Band-Edge Property in Oxygen-Incorporated ZnS for Acting as an Efficient Crystal Photocatalyst
M. H. Lin, P. S. Parasuraman, C. H. Ho*

ACS Omega, Vol. 3, Iss. 6, pp. 6351-6359, 2018.06. (EI/SCI, IF 3.7) 

150. Dynamic Tungsten Diselenide Nanomaterials: Supramolecular Assembly-Induced Structural Transition over Exfoliated Two-Dimensional Nanosheets
A. A. Muhabie, C. H. Ho, B. T. Gebeyehu, S. Y. Huang, C. W. Chiu, J. Y. Lai, D. J. Lee, C. C. Cheng

Chemical Science, Vol. 8, pp. 2733-2739, 2018.06. (EI/SCI, IF 7.6) 

149. Curvature-dependent flexible light emissions from layered gallium selenide crystals
C. A. Chuang, M. H. Lin, B. X. Yeh, C. H. Ho*

RSC Advances, Vol. 8, pp. 2733-2739, 2018.01. (EI/SCI, IF 3.9) 

148. Ultra-efficient ultraviolet and visible light sensing and ohmic contacts in high-mobility InSe nanoflake photodetectors fabricated by focused-ion beam technique
H. W. Yang, H. F. Hsieh, R. S. Chen, C. H. Ho, K. Y. Lee, L. C. Chao

ACS Applied Materials & Interfaces, Vol. 10, No. 6, pp. 5740-5749, 2018.01. (EI/SCI, IF 8.3) 

147. Temperature dependence of direct and indirect band gaps 5 of Bi13I2S18 hexagonal rod crystals
Y. H. Chen, C. H. Ho*

Materials Chemistry and Physics, Vol. 206, pp. 71-75, 2018.02. (EI/SCI, IF 4.6) 

146. Polarization photoelectric conversion in layered GeS
H. C. Hsueh*, J. X. Li, C. H. Ho*

Advanced Optical Materials, Vol. 6, Iss. 4, p. 1701194, 2018.02. (EI/SCI, IF 8.0) 

145. Interplay between Cr dopants and vacancy clustering in the structural and optical properties of WSe2
C. H. Ho*, W. H. Chen, K. K. Tiong, K. Y. Lee, A. Gloter, A. Zobelli, O. Stéphan, L. H. G. Tizei*

ACS Nano, Vol. 11, No. 11, pp. 11162-11168, 2017.11. (EI/SCI, IF 15.8) 

144. Optical study of high quality c-ZnS crystal for UV photodiode and photoelectrochemical applications
M. H. Lin, P. S. Parasuraman, Ching-Hwa Ho*, J. H. Ho, L. C. Chao, and K. Y. Lee

ChemistrySelect, Vol. 2, Iss. 8, pp. 9391-9395, 2017.10. (EI/SCI, IF 1.9) 

143. Cleavage tendency of anisotropic two-dimensional materials: ReX2 (X=S, Se) and WTe2
Haifeng Wang, Erfu Liu, Yu Wang, Bo Wan, Ching-Hwa Ho, F. Miao, and X. G. Wan

Physical Review B, Vol. 96, p. 165418 (7pp), 2017.10. (EI/SCI, IF 3.2) 

142. Synthesis and Optical Characterization of Oxygen-Incorporated ZnS(1-x)Ox For UV-Visible Color Palette Light-Emission Matter
Min-Han Lin and Ching-Hwa Ho*

ACS Omega, Vol. 2, No. 8, pp. 4514-4523, 2017.08. (EI/SCI, IF 3.7) 

141. High-Mobility InSe Transistors: The Role of Surface Oxides
Po-Hsun Ho, Yih-Ren Chang, Yu-Cheng Chu, Min-Ken Li, Che-An Tsai, Wei-Hua Wang, Ching-Hwa Ho, Chun-Wei Chen, and Po-Wen Chiu

ACS Nano, Vol. 11, No. 7, pp. 7362-7370, 2017.07. (EI/SCI, IF 15.8) 

140. Direct and indirect light emissions from the layered ReS2-xSex (0≦x≦2)
C. H. Ho*, Z. Z. Liu, and M. H. Lin

Nanotechnology, Vol. 28, No. 23, p. 235203 (9pp), 2017.06. (EI/SCI, IF 2.9) .

139. Direct identification of monolayer rhenium diselenide by an individual electron diffraction pattern
Z. Fei, B. Wang, C. H. Ho, F. Lin, J. Yuan, Z. Zhang, C. Jin

Nano Research, Vol. 10, No. 7, pp. 2535-2544, 2017.07. (EI/SCI, IF 9.5) 

138. Structure and opto-thermo electronic property of a newly (Bi(Bi2S3)9I3)2/3 hexagonal nano-/micro- rod
C. H. Ho*, Y. H. Chen, Y. K. Kuo, and C. W. Liu

Chemical Communications, Vol. 53, pp. 3741-3744, 2017.04. (EI/SCI, IF 4.3) 

137. The study of flexible emission and photoconductivity in 2D layered InSe toward an applicable 1000-nm light emitter and absorber
C. A. Chuang, M. H. Lin, B. X. Yeh, Y. J. Chu, and C. H. Ho*

Applied Physics A, Vol. 123, p. 197 (7pp), 2017.03. (EI/SCI, IF 2.5) 

136. Pressure-induced metallization and superconducting phase in ReS2
D. Zhou, Y. Zhou, C. Pu, X. Chen, P. Lu, X. Wang, C. An, Y. Zhou, F. Miao, C. H. Ho, J. Sun, Z. Yang, D. Xing

npj Quantum Materials (NPG), Vol. 2, p. 19 (7pp+SI), 2017.03. (EI/SCI, IF 5.4) 

135. Polarized band-edge emission and dichroic optical behavior in thin multilayer GeS
C. H. Ho* and J. X. Li

Advanced Optical Materials (Communication), Vol. 5, Iss. 3, p. 1600814, 2017.02. (EI/SCI, IF 8.0) 

134. Anisotropic spectroscopy and electrical properties of 2D ReS2(1–x)Se2x alloys with distorted 1T structure
W. Wen, Y. Zhu, X. Liu, H.-P. Hsu, Z. Fei, Y. Chen, X. Wang, M. Zhang, K.-H. Lin, F.-S. Huang, Y.-P. Wang, Y.-S. Huang, C. H. Ho, P.-H. Tan, C. Jin, and L. Xie

Small, Vol. 13, p. 1603788, 2017.03. (EI/SCI, IF 13.0) 

133. Optical and Photodetector Properties of Stripe-Like InS Crystal
C. H. Ho*, Y. H. Chen, J. H. Ho

RSC Advances (Communication), Vol. 6, Iss. 99, pp. 97445-97448, 2016.10. (EI/SCI, IF 3.9) 

132. Optical characterization of structural quality in the formation of In2O3 thin-film nanostructures
C. H. Chan, M. H. Lin, L. C. Chao, K. Y. Lee, L. C. Tien, and C. H. Ho*

Journal of Physical Chemistry C, Vol. 120, No. 38, pp. 21983-21989, 2016.09. (EI/SCI, IF 3.3) 

131. Synthesis and optical characterization of high-quality ZnS substrate for optoelectronics and UV solar-energy conversion
C. H. Ho*, and M. H. Lin

RSC Advances, Vol. 6, Iss. 84, pp. 81053-81059, 2016.08. (EI/SCI, IF 3.9) 

130. Disorder engineering and conductivity dome in ReS2 with electrolyte gating
D. Ovchinnikov, F. Gargiulo, A. Allain, D. J. Pasquier, D. Dumcenco, C. H. Ho, O. V. Yazyev, A. Kis

Nature Communications, Vol. 7, p. 12391 (7pp+SI), 2016.08. (EI/SCI, IF 14.7) 

129. Synthesis of In2S3 and Ga2S3 crystals for oxygen sensing and UV photodetection
C. H. Ho*, M. H. Lin, Y. P. Wang, and Y. S. Huang

Sensors and Actuators A: Physical, Vol. 245, pp. 119-126, 2016.07. (EI/SCI, IF 4.1) 

128. Thickness-dependent carrier transport and optically-enhanced transconductance gain in III-VI multilayer InSe
C. H. Ho*

2D Materials, Vol. 3, No. 2, p. 025019 (12pp), 2016.06. (EI/SCI, IF 4.5) 

127. Observation of near-band-edge photoluminescence and UV photoresponse in near-stoichiometric Zn2SnO4 nanowires
L. C. Tien, S. J. Yang, Y. H. Chen, and C. H. Ho

Materials Research Express, Vol. 3, p. 066201 (11pp), 2016.06. (EI/SCI, IF 1.8) 

126. Optical Characterization of Strong UV Luminescence Emitted from the Excitonic Edge of Nickel Oxide Nanotowers
C. H. Ho*, Y. M. Kuo, C. H. Chan and Y. R. Ma

Scientific Reports (NPG), Vol. 5, p. 15856 (7pp+SI), 2015.10. (EI/SCI, IF 3.8) 

125. Single-Layer ReS2: Two-Dimensional Semiconductor with Tunable In-Plane Anisotropy
Y. C. Lin, H. P. Komsa, C. H. Yeh, T. Björkman, Z. Y. Liang, C. H. Ho, Y. S. Huang, P. W. Chiu, A. V. Krasheninnikov, K. Suenaga

ACS Nano, Vol. 9, No. 11, pp. 11249-11257, 2015.11. (EI/SCI, IF 15.8) - WOS highly cited

124. Bending Photoluminescence and Surface Photovoltaic Effect on Multilayer InSe 2D Microplate Crystals
Ching-Hwa Ho* and Y. J. Chu

Advanced Optical Materials, Vol. 3, Iss. 12, pp. 1750-1758, 2015.12. (EI/SCI, IF 8.0)

123. Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors
E. Liu, Y. Fu, Y. Wang, Y. Feng, H. Liu, X. Wan, W. Zhou, B. Wang, L. Shao, C. H. Ho, Y. S. Huang, Z. Cao, L. Wang, A. Li, J. Zeng, F. Song, X. Wang, Y. Shi, H. Yuan, H. Y. Hwang, Y. Cui, F. Miao, and D. Xing

Nature Communications, Vol. 6, p. 6991 (7pp+SI), 2015.05. (EI/SCI, IF 14.7) - WOS highly cited

122. Optical-memory switching and oxygen detection based on the CVT grown γ- and α-phase In2Se3
Ching-Hwa Ho*, M. H. Lin, and C. C. Pan

Sensors and Actuators B: Chemical, Vol. 209, pp. 811-819, 2015.03. (EI/SCI, IF 8.0) 

121. Polarized optical sensing and band edge transitions in Ag(In0.5Al0.5)S2
Ching-Hwa Ho*, C. C. Pan, and Y. S. Huang

Applied Physics Express, Vol. 8, Iss. 2, p. 025801 (4pp), 2015.02. (EI/SCI, IF 2.3)

120. Structural property and optical band edge of Ag(In0.5Al0.5)S2
Ching-Hwa Ho* and C. C. Pan

Journal of Materials Science: Materials in Electronics, Vol. 26, Iss. 6, pp. 3766-3771, 2015.05. (EI/SCI, IF 14.7)

119. Surface sensing and optical behavior of Al-based silver chalcopyrites
Chia-Chi Pan and Ching-Hwa Ho*

Journal of Electronic Materials, Vol. 44, No. 3, pp. 984-990, 2015.01. (EI/SCI, IF 2.2)

118. Influence of rhenium on the structural and optical properties of molybdenum disulfide
M. Sigiro, Y. S. Huang, C. H. Ho*, Y. C. Lin, and K. Suenaga

Japanese Journal of Applied Physics, Vol. 54, No. 4S, p. 04DH05, 2015.04. (EI/SCI, IF 1.5)

117. Photoluminescence mechanisms of metallic Zn nanospheres, semiconducting ZnO nanoballoons, and metal-semiconductor Zn/ZnO nanospheres
J. H. Lin, R. A. Patil, R. S. Devan, Z. A. Liu, Y. P. Wang, Ching-Hwa Ho, Y. Liou, and Y. R. Ma

Scientific Reports (NPG), Vol. 4, p. 06967 (8pp+SI), 2014.11. (EI/SCI, IF 3.8)

116. Large-area nanoscale farmland-like surfaces of onedimensional NbO2 nanorods with multi-growth directions: Studies on the purple-blue photoluminescence and low-field electron emissions
J. H. Lin, R. A. Patil, M. A. Wu, L. G. Yu, K. D. Liu, W. T. Gao, R. S. Devan, C. H. Ho, Y. Liou, and Y. R. Ma

Journal of Materials Chemistry C, Vol. 2, Iss. 41, pp. 8667-8672, 2014.11. (EI/SCI, IF 5.7)

115. Transport properties in semiconducting NbS2 nanoflakes
Y. H. Huang, C. C. Peng, R. S. Chen, Y. S. Huang, and C. H. Ho

Applied Physics Letters, Vol. 105, Iss. 9, p. 093106 (4pp), 2014.09. (EI/SCI, IF 3.5)

114. Optically decomposed near-band-edge structure and excitonic transitions in Ga2S3
Ching-Hwa Ho* and H. H. Chen

Scientific Reports (NPG), Vol. 4, p. 06143 (9pp+SI), 2014.08. (EI/SCI, IF 3.8)

113. Optical behavior and structural property of CuAlS2 and AgAlS2 wide-band-gap chalcopyrites
Ching-Hwa Ho* and C. C. Pan

Applied Optics, Vol. 53, Iss. 22, pp. E7-E13, 2014.08. (EI/SCI, IF 1.7)

112. Amorphous effect on the advancing of wide-range absorption and structural-phase transition in γ-In2Se3 polycrystalline layers
Ching-Hwa Ho*

Scientific Reports (NPG), Vol. 4, p. 04764 (8pp), 2014.04. (EI/SCI, IF 3.8)

111. Piezoreflectance study of near band edge excitonic-transitions of mixed-layered crystal Mo(SxSe1-x)2 solid solutions
Y. J. Wu, P. H. Wu, J. Jadczak, Y. S. Huang, C. H. Ho, H. P. Hsu, and K. K. Tiong

Journal of Applied Physics, Vol. 115, Iss. 22, p. 223508 (6pp), 2014.06. (EI/SCI, IF 2.7)

110. Formation and stability of point defects in monolayer rhenium disulfide
S. Horzum, D. Cakır, J. Suh, S. Tongay, Y. S. Huang, Ching-Hwa Ho, J. Wu, H. Sahin, and F. M. Peeters

Physical Review B, Vol. 89, p. 155433 (7pp), 2014.04. (EI/SCI, IF 3.2)

109. Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling
S. Tongay, H. Sahin, C. H. Ko, A. Luce, W. Fan, K. Liu, J. Zhou, Ying-Sheng Huang, Ching-Hwa Ho, J. Y. Yan, D. F. Ogletree, S. Aloni, J. Ji, S. S. Li, J. B. Li, F. M. Peeters, and J. Wu

Nature Communications, Vol. 5, p. 3252 (6pp), 2014.02. (EI/SCI, IF 14.7) - WOS highly cited

108. Structural phase transition and erasable optically memorized effect in layered γ-In2Se3 crystals
Ching-Hwa Ho*, Y. C. Chen, and C. C. Pan

Journal of Applied Physics, Vol. 115, Iss. 3, p. 033501 (6pp), 2014.01. (EI/SCI, IF 2.7) - WOS highly cited

107. Thickness-tunable band gap modulation in γ-In2Se3
Ching-Hwa Ho* and Y. C. Chen

RSC Advances (Communication), Vol. 3, Iss. 47, pp. 24896-24899, 2013.12. (EI/SCI, IF 3.9)

106. NIR and UV enhanced photon detector made by diindium trichalcogenides
Ching-Hwa Ho* and Y. P. Wang

Optical Materials Express, Vol. 3, No. 9, pp. 1420-1427, 2013.09. (EI/SCI, IF 2.8)

105. Practical and user-friendly circuits and system design for signals’ sensing and generation
Ching-Hwa Ho* and J. H. Ho

Circuits and Systems, Vol. 4, No. 5, pp. 387-392, 2013.09. (New journal, ISSN online: 2513-1293) 

104. The Study of Optical Band Edge Property of Bismuth Oxide Nanowires α-Bi2O3
Ching-Hwa Ho*, C. H. Chan, Y. S. Huang, L. C. Tien, and L. C. Chao

Optics Express, Vol. 21, No. 10, pp. 11965-11972, 2013.05. (EI/SCI, IF 3.2) 

103. Surface Oxide Effect on Optical Sensing and Photoelectric Conversion of α-In2Se3 Hexagonal Microplates
Ching-Hwa Ho*, C. H. Lin, Y. P. Wang, Y. C. Chen, S. H. Chen, and Y. S. Huang

ACS Applied Materials & Interfaces, Vol. 5, Iss. 6, pp. 2269-2277, 2013.03. (EI/SCI, IF 8.3) 

102. Optical properties of wide-band-gap chalcopyrite CuAl(Se0.5S0.5)2 evaluated by thermoreflectance spectroscopy
Ching-Hwa Ho* and C. C. Pan

Optical Materials Express, Vol. 3, No. 4, pp. 480-488, 2013.04. (EI/SCI, IF 2.8) 

101. Structural and band-edge properties of Cu(AlxIn1-x)S2 (0≦x≦1) series chalcopyrite semiconductors
Ching-Hwa Ho*, C. C. Pan, J. R. Cai, G. T. Huang, D. O. Dumcenco, Y. S. Huang, K. K. Tiong, and C. C. Wu

Solid State Phenomena, Vol. 194, pp. 133-138, 2013. (EI/SCI, 2005 IF 0.493) 

100. Dichroic electro-optical behavior of rhenium sulfide layered crystal
Ching-Hwa Ho*

Crystal Structure Theory and Applications, Vol. 2, pp. 65-69, 2013.06. (New journal, ISSN online: 2169-2505) 

99. Optical Characterization of InAlAs/InGaAs Metamorphic High-Electron Mobility Transistor Structures with Tensile and Compressive Strain
C. H. Chan, Ching-Hwa Ho*, M. K. Chen, Y. S. Lin, Y. S. Huang and W. C. Hsu

Thin Solid Films, Vol. 529, pp. 217-221, 2013.02. (EI/SCI, IF 2.0) 

98. Composition dependent band gaps of single crystal Cu2ZnSn(SxSe1-x)4 solid solutions
Y. P. Wang, S. Levcenco, D. O. Dumcenco, Y. S. Huang, Ching-Hwa Ho, and K. K. Tiong

Solid State Phenomena, Vol. 194, pp. 139-143, 2013. (EI/SCI, 2005 IF 0.493) 

97. Direct vapor transport synthesis of ZnGa2O4 nanowires with superior photocatalytic activity
L. C. Tien, C. C. Tseng, Y. L. Chen, and C. H. Ho

Journal of Alloys and Compounds, Vol. 555, pp. 325-329, 2013.04. (EI/SCI, IF 5.8) 

96. Characterization of nitrogen doped p-type ZnO thin films prepared by reactive ion beam sputter deposition
L. C. Chao, J. W. Chen, H. C. Peng, and C. H. Ho

Surface and Coatings Technology, Vol. 231, pp. 492-495, 2013.09. (EI/SCI, IF 5.3) 

95. Thermoelectric properties of Pb1-xCdxSe crystals grown by vertical Bridgman method
H. J. Gau, Y. J. Chiou, C. C. Wu, Y. K. Kuo, and Ching-Hwa Ho

Solid State Phenomena, Vol. 194, pp. 148-152, 2013. (EI/SCI, 2005 IF 0.493) 

94. The study of rapid thermal annealing on arsenic-doped ZnO for p-type ZnO formation
Y. J. Chen, H. W. Jen, M. S. Wong, Ching-Hwa Ho, J. H. Liang, J. T. Liu, J. H. Pang

Journal of Crystal Growth, Vol. 362, pp. 193-196, 2013.01. (EI/SCI, IF 1.7) 

93. Cathodoluminescence and field emission properties of β-Ga2O3 nanobelts
L. C. Tien, C. C. Tseng, and Ching-Hwa Ho

Journal of Electronic Materials, Vol. 41, No. 11, pp. 3056-3061, 2012.11. (EI/SCI, IF 2.2) 

92. The study of below and above band-edge imperfection states in In2S3 solar energy material
Ching-Hwa Ho*

Physica B: Condensed Matter, Vol. 407, pp. 3052-3055, 2012.08. (EI/SCI, IF 2.8) 

91. Influence of anionic substitution on the electrolyte electroreflectance study of band edge transitions in single crystal Cu2ZnSn(SxSe1-x)4 solid solutions
S. Levcenco, D. Dumcenco, Y. P. Wang, Y. S. Huang, Ching-Hwa Ho, E. Arushanov, V. Tezlevan, K. K. Tiong

Optical Materials, Vol. 34, Iss. 8, pp. 1362-1365, 2012.06. (EI/SCI, IF 3.8) 

90. Surface sensing behavior and band-edge properties of AgAlS2: Experimental observations in optical, chemical and thermoreflectance spectroscopy
Ching-Hwa Ho* and C. C. Pan

AIP Advances, Vol. 2, Iss. 2, p. 022123 (14pp), 2012.06. (EI/SCI, IF 1.4) 

89. Nitrogen doping effect on optical property of gallium oxide nanowires
Ching-Hwa Ho*, L. C. Tien, and Y. Y. Ho

ECS Journal of Solid State Science and Technology, Vol. 1, Iss. 2, pp. 78-81, 2012.07. (EI/SCI, IF 1.8) 

88. Optical characterization of band edge property of In6S7 compound
Ching-Hwa Ho*, Y. P. Wang, and Y. S. Huang

Applied Physics Letters, Vol. 100, Iss. 13, p. 131905 (4pp), 2012.03. (EI/SCI, IF 3.5) 

87. Room-temperature wide-range photoluminescence and semiconducting characteristics of two-dimensional pure metallic Zn nanoplates
J. H. Lin, Y. J. Huang, Y. P. Su, C. A. Liu, R. S. Devan, Ching-Hwa Ho, Y. P. Wang, H. W. Lee, C. M. Chang, Y. Liou, and Y. R. Ma

RSC Advances, Vol. 2, pp. 2123-2127, 2012.02. (EI/SCI, IF 3.9) 

86. Direct-Optical Observation of Band edge Excitons, Band Gap and Fermi Level in Degenerate Semiconducting-Oxide Nanowires In2O3
Ching-Hwa Ho*, C. H. Chan, L. C. Tien, and Y. S. Huang

Journal of Physical Chemistry C, Vol. 115, Iss. 50, pp. 25088-25096, 2011.12. (EI/SCI, IF 3.3) 

85. Enhanced photoelectric-conversion yield in niobium incorporated In2S3 with intermediate band
Ching-Hwa Ho*

Journal of Materials Chemistry, Vol. 21, Iss. 28, pp.10518 10524, 2011.07. (IF 6.626) 

84. Electronic structure and optical property of As2(Te1-xSx)3 and As2(Te1-xSex)3 crystals
Ching-Hwa Ho*

Journal of Alloys and Compounds, Vol. 509, Iss. 26, pp.7198-7204, 2011.06. (EI/SCI, IF 5.8)
[此成果被引用收錄於粉末 X-ray資料庫 JCPDS] 

83. Temperature dependent crystal-field splitting and band-edge characteristic in Cu(AlxIn1-x)S2 (0≦x≦1) series solar energy materials
Ching-Hwa Ho*

Journal of The Electrochemical Society, Vol. 158, No. 5, pp. H554-H560, 2011.03. (EI/SCI, IF 3.1) 

82. Single crystal growth and characterization of copper aluminum indium disulphide chalcopyrites
Ching-Hwa Ho*

Journal of Crystal Growth, Vol. 317, pp. 52-59, 2011.02. (EI/SCI, IF 1.7)

81. Optical characterization of electronic structure of CuInS2 and CuAlS2 chalcopyrite crystals
C. H. Ho*, S. F. Lo, P. C. Chi, C. C. Wu, Y. S. Huang, and K. K. Tiong

Solid State Phenomena, Vol. 170, pp. 21-24, 2011.04. (EI/SCI, 2005 IF 0.493)

80. Synthesis of β-Ga2O3 Nanowires as a Broadband Emitter
L. C. Tien, C. H. Ho, X. T. Yao, and J. R. Cai

Applied Physics A, Vol. 102, No. 1, pp. 105 to 108, 2011.01. (EI/SCI, IF 2.5)

79. Polarization dependent Raman active modes study of the Mo1-xWxS2 mixed layer crystals
D. O. Dumcenco, Y. C. Su, Y. P. Wang, K. Y. Chen, Y. S. Huang, C. H. Ho, and K. K. Tiong

Chinese Journal Physics, Vol. 49, No.1, pp. 270-277, 2011.02. (EI/SCI, IF 4.6)

78. Microstructures and thermoelectric properties of (Bi2Te3)1-x/(CdTe)x composites
H. J. Gau, W. R. Hwang, C. C. Wu , Y. K. Kuo, and C. H. Ho

Solid State Phenomena, Vol. 170, pp. 41-46, 2011.04. (EI/SCI, 2005 IF 0.493)

77. Enhanced Photocatalytic Activity in β-Ga2O3 Nanobelts
L. C. Tien, W. T. Chen, and C. H. Ho

Journal of American Ceramic Society, Vol. 94, No. 9, pp. 3117-3122, 2011.09. (EI/SCI, IF 3.5)

76. Piezoreflectance and Raman characterization of Mo1-xWxS2 layered mixed crystals
D. O. Dumcenco, Y. C. Su, Y. P. Wang, K. Y. Chen, Y. S. Huang, C. H. Ho, K. K. Tiong

Solid State Phenomena, Vol. 170, pp. 55-59, 2011.04. (EI/SCI, 2005 IF 0.493)

75. Thermoreflectance characterization of β-Ga2O3 thin-film nanostrips
Ching-Hwa Ho*, Chiao-Yeh Tseng, and Li-Chia Tien

Optics Express, Vol. 18, pp. 16360-16369, 2010.08. (EI/SCI, IF 3.2)

74. Temperature dependent photoconductivity in β-In2S3 single crystals
Ching-Hwa Ho*, Y. P. Wang, C. H. Chan, Y. S. Huang, C. H. Li

Journal of Applied Physics, Vol. 108, p. 043518 (4pp), 2010.08. (EI/SCI, IF 2.7)

73. Growth and characterization of near-band-edge transitions in  In2S3 single crystals
Ching-Hwa Ho*

Journal of Crystal Growth, Vol. 312, pp. 2718-2723, 2010.09. (EI/SCI, IF 1.7)

72. Thermoreflectance characterization of the band-edge excitonic transitions in CuAlS2 ultraviolet solar-cell material
Ching-Hwa Ho*

Applied Physics Letters, Vol. 96, p. 061902 (3pp), 2010.02. (EI/SCI, IF 3.5)

71. Polarized-thermoreflectance study of the band-edge transitions in Cu(Al0.5In0.5)S2 solar-energy related crystal
Ching-Hwa Ho*, and Guan-Tzu Huang

Optics Express, Vol. 18, pp. 3820-3827, 2010.02. (EI/SCI, IF 3.2)

70. Electronic structure and E1 excitons of CuInS2 energy-related crystals studied by temperature-dependent thermoreflectance spectroscopy
Ching-Hwa Ho*, Sheng-Feng Lo, and Ping-Chen Chi

Journal of The Electrochemical Society, Vol. 157, No. 2, pp. H219-H226, 2010.02. (EI/SCI, IF 3.1)

69. The study of surface photoconductive response in indium sulfide crystals
Y. P. Wang, Ching-Hwa Ho*, and Y. S. Huang

Journal of Physics D: Applied Physics, Vol. 43, No. 41, p. 415301 (5pp), 2010.10. (EI/SCI, IF 3.1)

68. Nitrogen-doped ZnO prepared by capillaritron reactive ion beam sputtering deposition
L. C. Chao, Y. R. Shih, Y. K. Li, J. W. Chen, J. D. Wu, and C. H. Ho

Applied Surface Science, Vol. 256, pp. 4153-4156, 2010.04. (EI/SCI, IF 6.3)

67. Effect of temperature on lateral growth of ZnO grains grown by MOCVD
Y. J. Chen, Y. Y. Shih, C. H. Ho, J. H. Du, and Y. P. Fu

Ceramics International, Vol. 36, pp. 69 73, 2010.01. (EI/SCI, IF 5.1)

66. Optical investigation of band-edge structure and built-in electric field of AlGaN/GaN heterostructures by means of thermoreflectance, photoluminescence, and contactless electroreflectance spectroscopy
Ching-Hwa Ho*, and Jheng-Wei Lee

Optics Letters, Vol. 34, pp. 3604-3606, 2009.12. (EI/SCI, IF 3.1)

65. High room-temperature photoluminescence of one-dimensional Ta2O5 nanorod arrays
R. S. Devan, W. D. Ho, C. H. Chen, H. W. Shiu, Ching-Hwa Ho, C. L. Cheng, S. Y. Wu, Y. Liou, and Y. R. Ma

Nanotechnology, Vol. 20, p. 445708 (5pp) , 2009.10. (EI/SCI, IF 2.9)

64. Temperature-dependent photoreflectance and photoluminescence characterization of the subband structure and built-in electric field of GaAs/GaInAs graded-channel high electron mobility transistor structures
Ching-Hwa Ho*, J. S. Li, and Y. S. Lin

Semiconductor Science & Technology, Vol. 24, p. 035013 (8pp) , 2009.02. (EI/SCI, IF 1.9)

63. Optical anisotropy of near band-edge transitions in zinc oxide nanostructures
C. H. Ho*, J. S. Li, Y. J. Chen, C. C. Wu, Y. S. Huang, and K. K. Tiong

Journal of Alloys and Compounds, Vol. 480, pp. 50-53, 2009.07. (EI/SCI, IF 6.2)

62. Structural and luminescent property of gallium chalcogenides GaSe1-xSx layer compounds
C. H. Ho*, S. T. Wang, Y. S. Huang, and K. K. Tiong

Journal of Materials Science: Materials in Electronics, Vol. 20, pp. 207-210, 2009.01. (EI/SCI, IF 2.8)

61. Optical and electrical characteristics of GaAs/InGaAs quantum-well device
K. C. Hsu, C. H. Ho,* and Y. S. Lin,* Y. H. Wu, R.T. Hsu, and K.W. Huang

Journal of Alloys and Compounds, Vol. 471, pp. 567-569, 2009.03. (EI/SCI, IF 6.2)

60. Mechanism of Well-Oriented Dense ZnO Film Formation by MOCVD
Y. J. Chen, C. H. Ho, H. Y. Lai and J. H. Du

JOM, Vol. 61, pp. 23-27, 2009.06. (EI/SCI, IF 2.6)

59. In-plane anisotropic electrical and optical properties of gold-doped rhenium disulphide
C. H. Liang, K. K. Tiong, Y. S. Huang, D. Dumcenco, and C. H. Ho

Journal of Materials Science: Materials in Electronics, Vol. 20, pp. 476-479, 2009.01. (EI/SCI, IF 2.8)

58. Thermoelectric properties of Zn–Sb alloys doped with In
H. J. Gau, J. L. Yu, C. C. Wu, Y. K. Kuo, and C. H. Ho

Journal of Alloys and Compounds, Vol. 480, pp. 73 75, 2009.07. (EI/SCI, IF 6.2)

57. Optical properties of rheniumdiselenide single crystals doped with transition metals
D. O. Dumcenco, Y. M. Chen, Y. S. Huang, and C. H. Ho

Moldavian Journal of The Physical Sciences, Vol. 8, No. 3-4, pp. 271-278, 2009.07.

. 

52. Band-edge properties of layered germanium dichalcogenides
C. H. Ho*, and S. T. Wang

Physical Review B, Vol. 76, p. 073315 (4pp), 2007.08. (EI/SCI, IF 3.7)

49. Dichroic optical and electrical properties of rhenium dichalcogenides layer compounds
C. H. Ho*, M. H. Hsieh, C. C. Wu, Y. S. Huang, and K. K. Tiong

Journal of Alloys and Compounds, Vol. 442, pp. 245-248, 2007.09. (EI/SCI, IF 6.2)