1.Influence of Mn, Fe, Co, and Cu Doping on the Photoelectric Properties of 1T HfS2 Crystals
DY Lin, YT Shih, WC Tseng, CF Lin, HZ Chen
Materials 15 (1), 173 (2021)
2.Polarization Properties of InGaN Vertical-Cavity Surface-Emitting Laser With Pipe Distributed Bragg Reflector
Y Ke, CJ Wang, GY Shiu, YY Chen, YS Lin, H Chen, J Han, CF Lin
IEEE Transactions on Electron Devices 69 (1), 201-204 (2021)
3.InGaN Resonant Microcavity With n+-Porous-GaN/p+-GaN Tunneling Junction
CF Lin, YT Zhang, CJ Wang, YY Chen, GY Shiu, J Han
IEEE Electron Device Letters 42 (11), 1631-1633 (2021)
4.Humidity Sensing and Photodetection Based on Tin Disulfide Nanosheets
DY Lin, HP Hsu, HS Hu, YC Yang, CF Lin, W Zhou
Crystals 11 (9), 1028 (2021)
5.InGaN resonant-cavity light-emitting diodes with porous and dielectric reflectors
CJ Wang, Y Ke, GY Shiu, YY Chen, YS Lin, H Chen, CF Lin
Applied Sciences 11 (1), 8 (2020)
6.The biennial TACT international thin films conference (TACT 2019)
DS Wuu, YY Chang, JS Fang, CK Chung, JJ Wu, CF Lin, YL Kuo, YC Lin,JJ Huang
Thin Solid Films 709, 138210 (2020)
7.Deep-UV porous AlGaN distributed Bragg reflectors for deep ultraviolet light-emitting diodes and laser diodes
CJ Wu, CY Kuo, CJ Wang, WE Chang, CL Tsai, CF Lin, J Han
ACS Applied Nano Materials 3 (1), 399-402 (2020)
8.Anisotropic properties of pipe-GaN distributed Bragg reflectors
CJ Wu, YY Chen, CJ Wang, GY Shiu, CH Huang, HJ Liu, H Chen, YS Lin,CF Lin,J Han
Nanoscale Advances 2 (4), 1726-1732 (2020)
9..PbI2 Single Crystal Growth and Its Optical Property Study
DY Lin, BC Guo, ZY Dai, CF Lin, HP Hsu
Crystals 9 (11), 589 (2019)
10.Photon-recycling in ultraviolet GaN-based photodiodes with porous AlGaN distributed Bragg reflectors
CJ Wu, GJ Wang, CH Kao, ZJ Yang, H Chen, YS Lin, CF Lin, J Han
ACS Applied Nano Materials 2 (8), 5044-5048 (2019)
11.Fabrication of GaOx Confinement Structure for InGaN Light Emitter Applications
YY Chen, YC Jhang, CJ Wu, H Chen, YS Lin, CF Lin
Crystals 8 (11), 418 (2018)
12.Bendable InGaN light-emitting nanomembranes with tunable emission wavelength
CF Lin, CL Su, HM Wu, YY Chen, BS Huang, KL Huang, BC Shieh, HJ Liu,J Han
ACS applied materials & interfaces 10 (43), 37725-37731 (2018)
13.Incorporation of carbon nanotube and graphene in ZnO nanorods-based hydrogen gas sensor
WC Huang, HJ Tsai, TC Lin, WC Weng, YC Chang, JL Chiu, JJ Lin,CF Lin,YS Lin,H Chen
Ceramics International 44 (11), 12308-12314 (2018)
14.Doping with Nb enhances the photoresponsivity of WSe2 thin sheets
DY Lin, JJ Jheng, TS Ko, HP Hsu, CF Lin
AIP Advances 8 (5), 055011 (2018)
15.Recent development of fabrication technologies of nitride LEDs for performance improvement
RH Horng, DS Wuu, CF Lin, CF Lai
Nitride Semiconductor Light-Emitting Diodes (LEDs), 209-241 (2018)
16.GaN/AlGaN ultraviolet light-emitting diode with an embedded porous-AlGaN distributed Bragg reflector
GJ Wang, BS Hong, YY Chen, ZJ Yang, TL Tsai, YS Lin, CF Lin
Applied Physics Express 10 (12), 122102 (2017)
17.85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering
TY Wang, CT Tasi, CF Lin, DS Wuu
Scientific Reports 7 (1), 1-8 (2017)
18.Ultraviolet GaN light-emitting diodes with porous-AlGaN reflectors
FH Fan, ZY Syu, CJ Wu, ZJ Yang, BS Huang, GJ Wang, YS Lin, H Chen, ...
Scientific reports 7 (1), 1-8 (2017)
19.Fabrication of thin-film nitride-based light-emitting diodes
RH Horng, DS Wuu, CF Lin
Handbook of Solid-State Lighting and LEDs, 677-690 (2017)
20.High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer
TS Ko, DY Lin, CF Lin, CW Chang, JC Zhang, SJ Tu
Journal of Crystal Growth 464, 175-179 (2017)
21.InGaN light-emitting diodes with an embedded nanoporous GaN distributed bragg reflectors
GY Shiu, KT Chen, FH Fan, KP Huang, WJ Hsu, JJ Dai, CF Lai, CF Lin
Scientific Reports 6 (1), 1-8 (2016)
22.Optical Properties of nanoporous GaN structure transformed from GaN epitaxial layer
CF Lin, GY Shiu, WJ Hsu
2016 Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) (2016)
23.InGaN light emitting diodes with a nanopipe layer formed from the GaN epitaxial layer
WJ Hsu, KT Chen, WC Huang, CJ Wu, JJ Dai, SH Chen, CF Lin
Optics Express 24 (11), 11601-11610 (2016)
24.ZnO nanoflakes on silver wires with antibacterial effects
SC Huang, KM Hsieh, TW Chang, YC Chen, CTR Yu, TC Lu, CF Lin,TY Yu,TT Wang,H Chen
Ceramics international 42 (6), 7848-7851 (2016)
25.Characterizations of zinc oxide nanorods incorporating a graphene layer as antibacterial nanocomposites on silicon substrates
H Chen, YY He, MH Lin, SR Lin, TW Chang, CF Lin, CTR Yu, ML Sheu,CB Chen,YS Lin
Ceramics International 42 (2), 3424-3428 (2016)
26.Mesoporous GaN for Photonic Engineering Highly Reflective GaN Mirrors as an Example
C Zhang, SH Park, D Chen, DW Lin, W Xiong, HC Kuo, CF Lin, H Cao,J Han
ACS photonics 2 (7), 980-986 (2015)
27.InGaN light-emitting diodes with embedded nanoporous GaN distributed Bragg reflectors
BC Shieh, YC Jhang, KP Huang, WC Huang, JJ Dai, CF Lai, CF Lin
Applied Physics Express 8 (8), 082101 (2015)
28.Fabrication of current confinement aperture structure by transforming a conductive GaN: Si epitaxial layer into an insulating GaOx layer
CF Lin, WC Lee, BC Shieh, D Chen, D Wang, J Han
ACS Applied Materials & Interfaces 6 (24), 22235-22242 (2014)
29.Current steering effect of GaN nanoporous structure
CF Lin, JH Wang, PF Cheng, WP Tseng, FH Fan, KC Wu, WC Lee, J Han
Thin solid films 570, 293-297 (2014)
30.InGaN light-emitting diodes with multiple-porous GaN structures fabricated through a photoelectrochemical etching process
KP Huang, KC Wu, FH Fan, WP Tseng, BC Shieh, SH Chen, CF Lin
ECS Journal of Solid State Science and Technology 3 (10), R185 (2014)
31.Fabrication of InGaN light-emitting diodes with embedded air-gap disks using laser-drilling and electrochemical processes
CF Lin, YH Tseng, WC Lee, WJ Hsu, YL Chen, SH Park, J Han
Applied Physics Express 7 (7), 076501 (2014)
32.Current Confinement Effect of InGaN Devices by Forming Photoelectrochemical-Oxidized GaN Nanoporous Structures
CF Lin, WC Lee, YL Chen, YH Tseng, JJ Dai, J Han
ECS Transactions 61 (4), 251 (2014)
33.InGaN light-emitting diodes with band-pass-filter-like GaN: Si nanoporous structures
KP Huang, KC Wu, PF Cheng, WP Tseng, BC Shieh, CF Lin, B Leung,J Han
Journal of Physics D: Applied Physics 47 (14), 145101 (2014)
34.Light emitting diode and fabricating method thereof
YK Fu, RH Jiang, YH Fang, BC Chen, CF Lin
US Patent 8,604,488 (2013)
35.Enhanced luminescence efficiency of Ag nanoparticles dispersed on indium tin oxide for polymer light-emitting diodes
SH Chen, YR Li, CF Yu, CF Lin, PC Kao
Optics Express 21 (22), 26236-26243 (2013)
36.Reducing a piezoelectric field in InGaN active layers by varying pattern sapphire substrates
CF Lin, KT Chen, WP Tseng, BC Shieh, CH Hsieh
IEEE transactions on electron devices 60 (12), 4180-4184 (2013)
37.Characterization of the well-aligned ZnO nanorod structure on a pulsed laser deposited AlZnO seed layer
CF Lin, MS Lin, CC Chen, PH Tsai, FH Wang
Surface and Coatings Technology 231, 161-165 (2013)
38.Fabricated InGaN membranes through a wet lateral etching process
KC Wu, KP Huang, PF Cheng, WP Tseng, YC Huang, RH Jiang, JH Wang, ...
Applied Physics Express 6 (8), 086501 (2013)
39.InGaN-based solar cells with a tapered GaN structure
CF Lin, KT Chen, SH Chen, CC Yang, WC Huang, TH Hsieh
Journal of crystal growth 370, 97-100 (2013)
40.Characterization of InGaN-based photovoltaic devices by varying the indium contents
CF Huang, WY Hsieh, BC Hsieh, CH Hsieh, CF Lin
Thin Solid Films 529, 278-281 (2013)
41.InGaN Light-Emitting Diode with a Photochemically Oxidized GaN Nanorod Structure
CC Yang, CF Lin, J Ren-Hao, BC Shieh, PF Cheng, WP Tseng, JJ Dai
ECS Journal of Solid State Science and Technology 2 (4), R65 (2013)
42.Separating InGaN membranes from GaN/sapphire templates through a crystallographic-etch-limited process
RH Jiang, CF Lin, YC Huang, FH Fan, KC Wu, JH Wang, PF Cheng,CC Yang
Rsc Advances 3 (32), 13446-13450 (2013)
43.InGaN Light-Emitting Diode with a Nanoporous/Air-Channel Structure
RH Jiang, CF Lin, CC Yang, FH Fan, YC Huang, WP Tseng, PF Cheng,KC Wu,JH Wang
Applied Physics Express 6 (1), 012103 (2012)
44.Chemical modification of Nitzschia panduriformis's frustules for protein and viral nanoparticle adsorption
MC Wu, JJP Coca, GRL Chang, SY Suen, CF Lin, HN Chou, SY Lai,MY Wang
Process Biochemistry 47 (12), 2204-2210 (2012)
45.Direct-grown air-void structure in the InGaN light-emitting diodes
CC Yang, CF Lin, KT Chen, RH Jiang, CM Lin
IEEE electron device letters 33 (12), 1738-1740 (2012)
46.Solution-processed Li–Al layered-double-hydroxide platelet structures for high efficiency InGaN light emitting diodes
CF Lin, PH Tsai, ZY Lin, JY Uan, CM Lin, CC Yang, BC Shieh
Optics Express 20 (105), A669-A677 (2012)
47.InGaN light-emitting diodes with embedded roughened structure in the GaN/sapphire interface formed using laser decomposition process
CF Lin, WC Huang, SH Chen, TH Hsieh, PH Tsai, TY Yu, CC Yang
ECS Journal of Solid State Science and Technology 1 (2), R62 (2012)
48.Nitride-Based Light-Emitting Diodes with a Radiated-Cone-Shaped Structure at GaN/Sapphire Interface
CF Lin, SH Chen, TY Yu, CM Lin, BC Shieh, KT Chen, JJ Dai
ECS Journal of Solid State Science and Technology 1 (1), R7 (2012)
49.Step-Roughened N-face GaN Surface on InGaN Light-Emitting Diodes Using a Laser Decomposition Process
CF Lin, SH Chen, TH Hsieh, WC Huang, TY Yu, PH Tsai
ECS Transactions 45 (7), 245 (2012)
50.InGaN-based light-emitting diodes with a sawtooth-shaped sidewall on sapphire substrate
CM Lin, CF Lin, BC Shieh, TY Yu, SH Chen, PH Tsai, KT Chen, JJ Dai,TL Tsia
IEEE Photonics Technology Letters 24 (13), 1133-1135 (2012)
51.Micro-square-array InGaN-based light-emitting diode with an insulated Ga2O3 Layer through a photoelectrochemical process
CF Lin, CM Lin, RH Jiang
Japanese Journal of Applied Physics 51 (1S), 01AG03 (2012)
52.Enhancement of Light Extraction Efficiency of InGaN Light-Emitting Diodes with an Air-Hole-Array Structure
CF Lin, YC Huang, SH Chen, GM Wang, ZZ Yang
Japanese Journal of Applied Physics 51 (1S), 01AG05 (2012)
53.InGaN light emitting diodes with a laser-treated tapered GaN structure
WC Huang, CF Lin, TH Hsieh, SH Chen, MS Lin, KT Chen, CM Lin,SH Chen,P Han
Optics Express 19 (105), A1126-A1134 (2011)
54.Study of InGaN-based light-emitting diodes on a roughened backside GaN substrate by a chemical wet-etching process
YK Fu, BC Chen, YH Fang, RH Jiang, YH Lu, R Xuan, KF Huang, CF Lin,YK Su, JF Chen, CY Chang
IEEE Photonics Technology Letters 23 (19), 1373-1375 (2011)
55.Chemical–Mechanical Lift-Off Process for InGaN Epitaxial Layers
MS Lin, CF Lin, WC Huang, GM Wang, BC Shieh, JJ Dai, SY Chang, DS Wuu, PL Liu, RH Horng
Applied physics express 4 (6), 062101 (2011)
56.The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure …
YK Fu, RH Jiang, YH Lu, BC Chen, R Xuan, YH Fang, CF Lin, YK Su, ...
Applied Physics Letters 98 (12), 121115 (2011)
57.曲率を考慮に入れた 3 次元メッシュの展開図生成
高橋成雄
研究報告 グラフィクスと CAD (CG) 2011 (16), 1-6 (2011)
58.InGaN-based light-emitting diodes with an embedded conical air-voids structure
YC Huang, CF Lin, SH Chen, JJ Dai, GM Wang, KP Huang, KT Chen, ...
Optics Express 19 (101), A57-A63 26 (2011)
59.视频监控联网系统关键技术及在水利工程中的应用
周林虎， 宋放， 林长杰
水利水电技术 42 (7), 89-91 (2011)
60.Synthesis of ZnO nanorod grafted TiO 2 nanotube 3-D arrayed heterostructure as supporting platform for nanoparticle deposition
YC Huang, SY Chang, CF Lin, WJ Tseng
Journal of Materials Chemistry 21 (36), 14056-14061 (2011)
61.Increasing the PLED luminescence efficiency by exploiting the surface plasmon resonance effect
SH Chen, ST Yu, YY Liou, CF Yu, CF Lin, PC Kao
Journal of The Electrochemical Society 158 (3), J53 (2010)
62.New method to increase light extraction efficiency in light-emitting diodes
CF Lin
Advanced Manufacturing Technology 31 (11), 7-9 (2010)
63.Blue light-emitting diodes with an embedded native gallium oxide pattern structure
CF Lin, KT Chen, KP Huang
IEEE electron device letters 31 (12), 1431-1433 (2010)
64.InGaN light emitting solar cells with a roughened N-face GaN surface through a laser decomposition process
KT Chen, WC Huang, TH Hsieh, CH Hsieh, CF Lin
Optics express 18 (22), 23406-23412 (2010)
65.InGaN-based light-emitting solar cells with a pattern-nanoporous p-type GaN: Mg layer
KT Chen, CF Lin, CM Lin, CC Yang, RH Jiang
Thin Solid Films 518 (24), 7377-7380 (2010)
66.Fabrication of the selective-growth ZnO nanorods with a hole-array pattern on a p-type GaN: Mg layer through a chemical bath deposition process
MS Lin, CC Chen, WC Wang, CF Lin, SY Chang
Thin Solid Films 518 (24), 7398-7402 (2010)
67.Chemical lift-off process for blue light-emitting diodes
CF Lin, JJ Dai, GM Wang, MS Lin
Applied physics express 3 (9), 092101 (2010)
68.Enhanced the light extraction efficiency of an InGaN light emitting diodes with an embedded rhombus-like air-void structure
JJ Dai, CF Lin, GM Wang, MS Lin
Applied physics express 3 (7), 071002 (2010)
69.An AlN Sacrificial Buffer Layer Embedded into the InGaN Light Emitting Diodes for a Chemical Lateral Etching Process
CF Lin, JJ Dai, MS Lin, CC Chen
Electrochemical and Solid-State Letters 13 (9), H309 (2010)
70.Enhancement of light output power of GaN-based light-emitting diodes using a SiO2 nano-scale structure on a p-GaN surface
HW Huang, FI Lai, JK Huang, CH Lin, KY Lee, CF Lin, CC Yu, HC Kuo
Semiconductor Science and Technology 25 (6), 065007 (2010)
71.InGaN Light-Emitting Diode Structure on a Photoelectrochemical Treated GaN: Si Layer
KT Chen, CM Lin, CF Lin
ECS Transactions 28 (4), 155 (2010)
72.Light-Output-Power Enhancement of GaN-Based Light-Emitting Diodes on an n-GaN Layer Using aPhotonic Quasi-Crystal Overgrowth
HW Huang, JK Huang, KY Lee, CF Lin, HC Kuo
IEEE Electron Device Letters 31 (6), 573-575 (2010)
73.InGaN light-emitting diodes with the inverted cone-shaped pillar structures
CF Lin, CM Lin, KT Chen, JJ Dai, MS Lin
IEEE Electron Device Letters 31 (5), 458-460 (2010)
74.An AlN sacrificial buffer layer inserted into the GaN/patterned sapphire substrate for a chemical lift-off process
CF Lin, JJ Dai, MS Lin, KT Chen, WC Huang, CM Lin, RH Jiang, ...
Applied physics express 3 (3), 031001 (2010)
75.Green light-emitting diodes with a photoelectrochemically treated microhole-array pattern
CF Lin, CM Lin, KT Chen, MS Lin, JJ Dai
Electrochemical and Solid-State Letters 13 (3), H90 (2010)
76.Semiconductors, dielectrics, and organic materials-031001 An AlN Sacrificial Buffer Layer Inserted into the GaN/Patterned Sapphire Substrate for a Chemical Lift-Off Process
CF Lin, JJ Dai, MS Lin, KT Chen, WC Huang, CM Lin, RH Jiang, ...
Applied Physics Express 3 (3) (2010)
77.Blue light-emitting diodes with a roughened backside fabricated by wet etching
CF Lin, CM Lin, KT Chen, WC Huang, MS Lin, JJ Dai, RH Jiang, ...
Applied Physics Letters 95 (20), 201102 (2009)
78.Optical properties of InGaN-based light emitting diodes fabricated through dry and wet mesa etching process
CF Lin, RH Jiang, CC Yang, CM Lin, HC Liu, KP Huang
Journal of the Electrochemical Society 156 (12), H930 (2009)
79.InGaN-based light-emitting diodes with nanoporous microhole structures
CF Lin, KT Chen, CM Lin, CC Yang
IEEE electron device letters 30 (10), 1057-1059 (2009)
80.Investigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate (NHPSS) by nano-imprint lithography
81.HW Huang, CH Lin, JK Huang, KY Lee, CF Lin, CC Yu, JY Tsai, R Hsueh, ...
Materials Science and Engineering: B 164 (2), 76-79 (2009)
82.InGaN-Based Light-Emitting Diodes with a Multiple-Air-Gap Layer
CF Lin, CC Yang, CM Lin, KT Chen, CW Hu, JD Tsay
Electrochemical and Solid-State Letters 12 (10), H365 (2009)
83.InGaN-Based Light-Emitting Diodes with the Photoelectrochemical Treated Microhole Array Structures
CF Lin, CM Lin
ECS Meeting Abstracts, 2335 (2009)
84.Fabrication of the InGaN-based light-emitting diodes through a photoelectrochemical process
CF Lin, CC Yang, JF Chien, CM Lin, KT Chen, SK Yen
IEEE Photonics Technology Letters 21 (16), 1142-1144 (2009)
85.Effective heat dissipation and higher light extraction efficiency of GaN vertical light emitting diodes for solid state lighting applications
CF Chu, FH Fan, CC Cheng, WH Liu, JY Chu, HC Cheng, CF Lin, ...
physica status solidi c 6 (S2 2), S909-S912 (2009)
86.InGaN-based light-emitting diodes with a cone-shaped sidewall structure fabricated through a crystallographic wet etching process
CF Lin, CM Lin, CC Yang, WK Wang, YC Huang, JA Chen, RH Horng
Electrochemical and Solid-State Letters 12 (7), H233 (2009)
87.Higher light-extraction efficiency of Nitride-based light-emitting diodes with hexagonal inverted pyramids structures
CC Yang, CF Lin, HC Liu, CM Lin, RH Jiang, KT Chen, JF Chien
Journal of The Electrochemical Society 156 (5), H316 (2009)
88.在 NaCl 溶液中 CTAB, SDS 和钨酸钠对印刷电路板缓蚀作用研究
张敏， 林昌健
腐蚀科学与防护技术 21 (2), 170-172 (2009)
89.Zr-Cu-Al-Ni-Sr 非晶合金的腐蚀行为研究
叶陈清， 林昌健
腐蚀科学与防护技术 21 (2), 143-145 (2009)
90.Fabrication of mesa shaped InGaN-based light-emitting diodes through a photoelectrochemical process
CC Yang, CF Lin, JH Chiang, HC Liu, CM Lin, FH Fan, CY Chang
Journal of electronic materials 38 (1), 145-152 (2009)
91.Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous -type GaN:Mg surfaces
CC Yang, CF Lin, CM Lin, CC Chang, KT Chen, JF Chien, CY Chang
Applied Physics Letters 93 (20), 203103 (2008)
92.InGaN-based Light Emitting Diodes with Photoelectrochemical Lateral Etching Process on InGaN Active Layers
CF Lin, CC Yang, HC Liu, CM Lin, KT Chen, JF Chien
ECS Transactions 16 (7), 149 (2008)
93.Wet mesa etching process in InGaN-based light emitting diodes
CC Yang, CF Lin, RH Jiang, HC Liu, CM Lin, CY Chang, DS Wuu, ...
Electrochemical and Solid-State Letters 11 (7), H169 (2008)
94.Fabricated nano-disk InGaN/GaN multi-quantum well of the inverse hexagonal pyramids
CC Yang, JJ Dai, RH Jiang, JH Zheng, CF Lin, HC Kuo, SC Wang
Journal of Physics and Chemistry of Solids 69 (2-3), 589-592 (2008)
95.Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands
CH Chiu, TC Lu, HW Huang, CF Lai, CC Kao, JT Chu, CC Yu, HC Kuo, ...
Nanotechnology 18 (44), 445201 (2007)
96.The self-assemble GaN: Mg inverted hexagonal pyramids formatted by photoelectrochemical wet-etching process
CF Lin, ZJ Yang, JJ Dai, JH Zheng, SY Chang
Thin solid films 515 (10), 4492-4495 (2007)
97.Growth and characterization of 380-nm InGaN/AlGaN LEDs grown on patterned sapphire substrates
RH Horng, WK Wang, SC Huang, SY Huang, SH Lin, CF Lin, DS Wuu
Journal of crystal growth 298, 219-222 (2007)
98.Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template
DS Wuu, WK Wang, KS Wen, SC Huang, SH Lin, SY Huang, CF Lin, ...
Applied Physics Letters 89 (16), 161105 (2006)
99.Enhanced light output power in InGaN light-emitting diodes by fabricating inclined undercut structure
CF Lin, ZJ Yang, BH Chin, JH Zheng, JJ Dai, BC Shieh, CC Chang
Journal of The Electrochemical Society 153 (12), G1020 (2006)
100.White light LED assembly
WH Chen, HY Huang, KC Chang, CF Lin
US Patent 7,083,302 (2006)
101.BLU and module using the BLU
WH Chen, HY Huang, KC Chang, CF Lin
US Patent 7,080,933 (2006)
102.Nitride-based LEDs with nano-scale textured sidewalls using natural lithography
HW Huang, HC Kuo, JT Chu, CF Lai, CC Kao, TC Lu, SC Wang, RJ Tsai, ...
Nanotechnology 17 (12), 2998 (2006)
103.Fabricated the inclined-undercut structure in high efficiency InGaN-based light emitting diodes
ZJ Yang, JH Zheng, JJ Dai, CF Lin
Quantum Electronics and Laser Science Conference, JWB73 (2006)
104.Fabrication InGaN nanodisk structure in GaN reverse hexagonal pyramid
CF Lin, JJ Dai, JH Zheng, ZJ Yang
Japanese journal of applied physics 45 (4S), 3818 (2006)
105.The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5--SiO2 distributed Bragg reflectors
CC Kao, TC Lu, HW Huang, JT Chu, YC Peng, HH Yao, JY Tsai, TT Kao, ...
IEEE photonics technology letters 18 (7), 877-879 (2006)
106.High-efficiency -based light-emitting diodes with nanoporous structure
CF Lin, JH Zheng, ZJ Yang, JJ Dai, DY Lin, CY Chang, ZX Lai, CS Hong
Applied physics letters 88 (8), 083121 (2006)
107.Precision electroweak measurements on the Z resonance
K Lübelsmeyer, SR Lautenschlager, V Eschenburg, JA Bagger, ...(2006)
108.Immune Genetic Learning of Fuzzy Cognitive Map
林春梅， 何跃， 汤兵勇
东华大学学报: 英文版 23 (6), 10-14 (2006)
109.High-efficiency InGaN light-emitting diodes via sidewall selective etching and oxidation
CF Lin, ZJ Yang, JH Zheng, JJ Dai
Journal of The Electrochemical Society 153 (1), G39 (2005)
110.Self-assembled GaN: Mg inverted hexagonal pyramids formed through a photoelectrochemical wet-etching process
CF Lin, JJ Dai, ZJ Yang, JH Zheng, SY Chang
Electrochemical and Solid-State Letters 8 (12), C185 (2005)
111.Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall
CF Lin, ZJ Yang, JH Zheng, JJ Dai
IEEE photonics technology letters 17 (10), 2038-2040 (2005)
112.Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing and distributed Bragg reflector
CC Kao, YC Peng, HH Yao, JY Tsai, YH Chang, JT Chu, HW Huang, ...
Applied Physics Letters 87 (8), 081105 (2005)
113.Light emitting diode light source
WH Chen, H Huang, K Chang, CF Lin
US Patent App. 10/760,281 (2005)
114.Illumination apparatus with laser emitting diode
WH Chen, H Huang, K Chang, CF Lin
US Patent App. 10/760,416 (2005)
115.Effective video multicast over wireless internet
H Yin, C Lin, B Li, Q Ni
Institute of Electronics, Information and Communication Engineers (2005)
116.Light-output enhancement in a nitride-based light-emitting diode with 22 undercut sidewalls
CC Kao, HC Kuo, HW Huang, JT Chu, YC Peng, YL Hsieh, CY Luo, ...
IEEE photonics technology letters 17 (1), 19-21 (2004)
117.Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching
HW Huang, CC Kao, TH Hsueh, CC Yu, CF Lin, JT Chu, HC Kuo, ...
Materials Science and Engineering: B 113 (2), 125-129 (2004)
118.Investigation of GaN LED with Be-implanted Mg-doped GaN layer
HW Huang, CC Kao, JT Chu, HC Kuo, SC Wang, CC Yu, CF Lin
Materials Science and Engineering: B 113 (1), 19-23 (2004)
119.Study of GaN light-emitting diodes fabricated by laser lift-off technique
CF Chu, FI Lai, JT Chu, CC Yu, CF Lin, HC Kuo, SC Wang
Journal of Applied Physics 95 (8), 3916-3922 (2004)
120.Study of dry etching for GaN and InGaN-based laser structure using inductively coupled plasma reactive ion etching
CC Kao, HW Huang, JY Tsai, CC Yu, CF Lin, HC Kuo, SC Wang
Materials Science and Engineering: B 107 (3), 283-288 (2004)
121.MOCVD growth of AlN/GaN DBR structures under various ambient conditions
HH Yao, CF Lin, HC Kuo, SC Wang
Journal of crystal growth 262 (1-4), 151-156 (2004)
122.Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes
CF Lin, HH Yao, JW Lu, YL Hsieh, HC Kuo, SC Wang
Journal of crystal growth 261 (2-3), 359-363 (2004)
123.Etching damages on AlGaN, GaN and InGaN caused by hybrid inductively coupled plasma etch and photoenhanced chemical wet etch by Schottky contact characterizations
CY Fang, WJ Huang, EY Chang, CF Lin, MS Feng
Japanese journal of applied physics 42 (7R), 4207 (2003)
124.Comparison of p-side down and p-side up GaN light-emitting diodes fabricated by laser lift-off
CF Chu, CC Yu, HC Cheng, CF Lin, SC Wang
Japanese journal of applied physics 42 (2B), L147 (2003)
125.Electrical and optical properties of beryllium-implanted Mg-doped GaN
CC Yu, CF Chu, JY Tsai, CF Lin, SC Wang
Journal of applied physics 92 (4), 1881-1887 (2002)
126.Gallium nitride nanorods fabricated by inductively coupled plasma reactive ion etching
CC Yu, CF Chu, JY Tsai, HW Huang, TH Hsueh, CF Lin, SC Wang
Japanese journal of applied physics 41 (8B), L910 (2002)
127.A study of subbands in AlGaN/GaN high-electron-mobility transistor structures using low-temperature photoluminescence spectroscopy
CY Fang, CF Lin, EY Chang, MS Feng
Applied physics letters 80 (24), 4558-4560 (2002)
128.Fabrication the Nanoporous InGaN-based Light-Emitting Diodes
CF LIN, JH ZHENG, ZJ YANG
Appl. Phys. Lett 80, 980 (2002)
129.Measurement of the branching fractions for and
B Aubert, D Boutigny, JM Gaillard, A Hicheur, Y Karyotakis, JP Lees, ...
Physical Review D 65 (3), 031101 (2001)
130.Beryllium-implanted P-type GaN with high carrier concentration
CC Yu, CF Chu, JY Tsai, CF Lin, WH Lan, CI Chiang, SC Wang
Japanese Journal of Applied Physics 40 (5A), L417 (2001)
131.Measurement of the decays B-> ϕK and B-> ϕK
B Aubert, D Boutigny, JM Gaillard, A Hicheur, Y Karyotakis, JP Lees, ...
American Physical Society (2001)
132.Properties of Mg activation in thermally treated GaN: Mg films
CF Lin, HC Cheng, CC Chang, GC Chi
Journal of Applied Physics 88 (11), 6515-6518 (2000)
133.A measurement of the B^ 0-anti-B^ 0 oscillation frequency and determination of flavor-tagging efficiency using semileptonic and hadronic B^ 0 decays
B Aubert, BABAR Collaboration
Arxiv preprint hep-ex/0008052 (2000)
134.Measurement of branching fractions for two-body charmless B decays to charged pions and kaons at BABAR
B Aubert, BABAR Collaboration
Arxiv preprint hep-ex/0008057 (2000)
135.Electrical and optical characteristics of the GaN light-emitting diodes with multiple-pair buffer layer
CC Yang, MC Wu, CC Chuo, JI Chyi, CF Lin, GC Chi
Solid-State Electronics 44 (8), 1483-1486 (2000)
136.Improved contact performance of GaN film using Si diffusion
CF Lin, HC Cheng, GC Chi, CJ Bu, MS Feng
Applied Physics Letters 76 (14), 1878-1880 (2000)
137.W ohmic contact for highly doped n-type GaN films
CF Lin, HC Cheng, GC Chi
Solid-State Electronics 44 (4), 757-760 (2000)
138.Two-dimensional electron gas and persistent photoconductivity in heterostructures
TY Lin, HM Chen, MS Tsai, YF Chen, FF Fang, CF Lin, GC Chi
Physical Review B 58 (20), 13793 (1998)
139.Structure of rubescensin E
C Lin, Z Zhao
Zhongguo Zhong yao za zhi= Zhongguo Zhongyao Zazhi= China Journal of Chinese …(1997)
140.Growth and characterizations of GaN on SiC substrates with buffer layers
CF Lin, HC Cheng, GC Chi, MS Feng, JD Guo, J Minghuang Hong, ...
Journal of applied physics 82 (5), 2378-2382 (1997)
141.Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructures
CF Lin, HC Cheng, JA Huang, MS Feng, JD Guo, GC Chi
Applied physics letters 70 (19), 2583-2585 (1997)
142.The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer
CF Lin, GC Chi, MS Feng, JD Guo, JS Tsang, JM Hong
Applied physics letters 68 (26), 3758-3760 (1996)
143.X‐ray crystallographic study of GaN epitaxial films on Al2O3(0001) substrates with GaN buffer layers
CH Lee, GC Chi, CF Lin, MS Feng, JD Guo
Applied physics letters 68 (24), 3440-3442 (1996)