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#BSM100GD120DN2 Infineon BSM100GD120DN2 New IGBT Modules 1200V 100A FL BRIDGE, #BSM100GD120DN2

Email: sales@shunlongwei.com

Manufacturer: Infineon

Product Category: IGBT Modules

· Solderable Power module

· 3-phase full-bridge

· Including fast free-wheel diodes

· Package with insulated metal base plate Type BSM 100 GD 120 DN2

Maximum Ratings Parameter

Collector-emitter voltage Collector-gate voltage RGE = 20 k

Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C

Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C

Power dissipation per IGBT TC = 25 °C

Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min.

Specifications:

Collector Emitter Voltage V(br)ceo: 1.2kV

Collector Emitter Voltage Vces: 3 V

Current Ic Continuous a Max: 100 A

Current Temperature: 80°C

DC Collector Current: 150 A

Full Power Rating Temperature: 25°C

Module Configuration: Six

Mounting Type: Solder

Number of Pins: 39

Number of Transistors: 6

Operating Temperature Range: -40°C to +125°C

Package / Case: Econopack 3

Power Dissipation Max: 680 W

Power Dissipation Pd: 680 W

Power Dissipation: 680 W

Pulsed Current Icm: 200 A

Transistor Case Style: Econopack 3

Transistor Type:

Voltage Vce Sat Typ: 2.5 V

Voltage Vces: 1.2kV