Sell NXP BLF6G10LS-135R New Stock

BLF6G10LS-135R RF MOSFET Transistors LDMOS TNS ; BLF6G10LS-135R

• Part Number: BLF6G10LS-135R

• Category: Discrete Semiconductor

• Manufacturer: NXP

• Packaging: SMD/SMT

• Data Code: 2015+

• Qty Available: 359

Datasheets:BLF6G10(LS)-135R SOT502 BPCN Assembly Origin:RF Power Transistors Transfer PCN Packaging:Date Code Extended Standard Package:20 Category:Discrete Semiconductor Products Family:RF FETsSeries:-Packaging:TrayTransistor Type:LDMOSFrequency:871.5MHz ~ 891.5MHzGain:21dB Voltage - Test:28 VCurrent Rating:32A Noise Figure:-Current - Test:950mA Power - Output:26.5W Voltage - Rated:65V Package / Case:SOT-502BSupplier Device Package:SOT 502B Dynamic Catalog:RF HEMT HFET LDMOS FETsOther

NXP BLF6G10LS-135R New RF MOSFET Transistors LDMOS TNS , BLF6G10LS-135R pictures, BLF6G10LS-135R price, #BLF6G10LS-135R supplier

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Product Category: RF MOSFET Transistors BLF6G10LS-135R

Manufacturer: NXP

RoHS: RoHS Compliant YES

Transistor Polarity: N-Channel

Id - Continuous Drain Current: 32 A

Vds - Drain-Source Breakdown Voltage: 65 V

Rds On - Drain-Source Resistance: 100 mOhms

Technology: Si

Maximum Operating Temperature: + 150 C

Mounting Style: SMD/SMT

Package / Case: SOT502B

Packaging: Tube

Brand: NXP Semiconductors

Channel Mode: Enhancement

Configuration: Single

Height: 4.72 mm

Length: 20.7 mm

Minimum Operating Temperature: - 65 C

Factory Pack Quantity: 20

Type: RF Power MOSFET

Vgs - Gate-Source Voltage: 13 V

Width: 9.91 mm

Part # Aliases: BLF6G10LS-135R,112

RF MOSFET Transistors LDMOS TNS