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To conceive, to realize and to operate semiconductor laser devices for the generation and control of dissipative light bullets (LB).
To conceive, to realize and to operate semiconductor laser devices for the generation and control of dissipative light bullets (LB).
LB will be implemented in Vertical External Cavity Surface Emitting semiconductor devices (VECSEL). Devices will be developed for matching the parameters requirements for LB existence.
LB will be implemented in Vertical External Cavity Surface Emitting semiconductor devices (VECSEL). Devices will be developed for matching the parameters requirements for LB existence.
Once LB will be obtained and characterized, their application to information processing will be addressed by targeting a three-dimensional all-optical buffer.
Once LB will be obtained and characterized, their application to information processing will be addressed by targeting a three-dimensional all-optical buffer.
WP1 Design, technology and tests of the semiconductor gain and absorbing mirrors
WP1 Design, technology and tests of the semiconductor gain and absorbing mirrors
IES, C2N as subcontractor, Manager: A. Garnache
WP2 Implementation of Light Bullets in Laser Systems
WP2 Implementation of Light Bullets in Laser Systems
INPHYNI, Manager: M. Giudici
WP3 Applications of Light Bullets
WP3 Applications of Light Bullets
INPHYNI, IES, Manager: M. Giudici
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