1. Preparation of degenerate n-type AlxGa1−xN (0 < x ≤ 0.81) with record low resistivity by pulsed sputtering deposition
   Y. Nishikawa, K. Ueno, A. Kobayashi, H. Fujioka
   Applied Physics Letters 122, 232102 (2023).
   DOI: 10.1063/5.0144418

2. Positive impurity size effect in degenerate Sn-doped GaN prepared by pulsed sputtering
   Y. Nishikawa, K. Ueno, A. Kobayashi, H. Fujioka
   Applied Physics Letters 122, 082102 (2023).
   DOI: 10.1063/5.0118126

3. Electrical properties of N-polar Si-doped GaN prepared by pulsed sputtering
   K. Ueno, Y. Masuda, A. Kobayashi, H. Fujioka
   Applied Physics Express 16, 011002 (2023).

DOI: 10.35848/1882-0786/acb2b1

4. Epitaxial Junction of Inversion Symmetry Breaking AlN and Centrosymmetric NbN: A Polarity Control of Wide-Bandgap AlN
   A. Kobayashi*, S. Kihira, T. Akiyama, T. Kawamura, T. Maeda, K. Ueno, H. Fujioka
   ACS Applied Electronic Materials 5, 240 (2023).
   DOI: 10.1021/acsaelm.2c01288 

5. Schottky barrier height engineering in vertical p-type GaN Schottky barrier diodes for high-temperature operation up to 800 K
   K. Aoyama,  K. Ueno,  A. Kobayashi, H. Fujioka
   Applied Physics Letters 121, 232103 (2022).
   DOI: 10.1063/5.0123299 

6. Crystal-Phase Controlled Epitaxial Growth of NbNx Superconductors on Wide-Bandgap AlN Semiconductors
   A. Kobayashi*, S. Kihira, T. Takeda, M. Kobayashi, T. Harada, K. Ueno, H. Fujioka
   Advanced Materials Interfaces 9, 2201244 (2022).
   DOI: 10.1002/admi.202201244

7. AlN/Al0.5Ga0.5N HEMTs with heavily Si-doped degenerate GaN contacts prepared via pulsed sputtering
   R. Maeda, K. Ueno, A. Kobayashi, H. Fujioka
   Applied Physics Express 15, 031002 (2022).
   DOI: 10.35848/1882-0786/ac4fcf

8. Reduction of Twin Boundary in NbN Films Grown on Annealed AlN
   S. Kihira, A. Kobayashi*, K. Ueno, H. Fujioka,
   Crystal Growth & Design 22, 1720 (2022).
   DOI: 10.1021/acs.cgd.1c01287

9. Ultrathin rock-salt type NbN films grown on atomically flat AlN/sapphire substrates
   A. Kobayashi*, K. Ueno, H. Fujioka
   Journal of Crystal Growth 572, 126269 (2021).
   DOI: 10.1016/j.jcrysgro.2021.126269

10. High Electron Mobility AlN on Sapphire (0001) with a Low Dislocation Density Prepared via Sputtering and High-Temperature Annealing
    Y. Sakurai, K. Ueno, A. Kobayashi, K. Uesugi, H. Miyake, H. Fujioka
    Physics Status Solidi A 218, 2100074 (2021).
    DOI: 10.1002/pssa.202100074

11. Pulsed sputtering growth of heavily Si-doped GaN (20-21) for tunneling junction contacts on semipolar InGaN (20-21) LEDs
    S. Morikawa, K. Ueno, A. Kobayashi, H. Fujioka
    Applied Physics Express 14 051011 (2021).
    DOI: 10.35848/1882-0786/abf669

12. Heavily Si-doped pulsed sputtering deposited GaN for tunneling junction contacts in UV-A light emitting diodes
    T. Fudetani,  K. Ueno,  A. Kobayashi,  H. Fujioka
    Applied Physics Letters 118, 072101 (2021).
    DOI: 10.1063/5.0040500

13. Vertical p-type GaN Schottky barrier diodes with nearly ideal thermionic emission characteristics
    K. Ueno, K. Shibahara, A. Kobayashi, H. Fujioka
    Applied Physics Letters 118, 022102 (2021).
    DOI: 10.1063/5.0036093

14. Growth of InN ultrathin films on AlN for the application to field-effect transistors
    D. Jeong, A. Kobayashi, K. Ueno, H. Fujioka
    AIP Advances 10, 125221 (2020).  OPEN ACCESS
    DOI: 10.1063/5.0035203

15. Autonomous growth of NbN nanostructures on atomically flat AlN surfaces
    A. Kobayashi*,  K. Ueno, H. Fujioka
    Applied Physics Letters 117, 231601 (2020).
    DOI: 10.1063/5.0031604 

16. Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN
    B. Ma, M. Tang,  K. Ueno,  A. Kobayashi,  K. Morita,  H. Fujioka, Y. Ishitani
    Applied Physics Letters 117, 192103 (2020).
    DOI: 10.1063/5.0023112

17. Coherent epitaxial growth of superconducting NbN ultrathin films on AlN by sputtering
    A. Kobayashi*, K. Ueno, H. Fujioka
    Applied Physics Express 13, 061006 (2020). OPEN ACCESS
    DOI: 10.35848/1882-0786/ab916e

18. Optical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition
    K. Ueno, T. Fudetani, A. Kobayashi, H. Fujioka
    Scientific Reports 9, 20242 (2019). OPEN ACCESS

19. Improving the electron mobility of polycrystalline InN grown on glass substrates using AlN crystalline orientation layers
    M. Sakamoto, A. Kobayashi, Y. K. Fukai, K. Ueno, Y. Tokumoto, H. Fujioka
    Journal of Applied Physics 126, 075701 (2019).

20. Characteristics of unintentionally doped and lightly Si-doped GaN prepared via pulsed sputtering
    K. Ueno, A. Kobayashi, H. Fujioka
    AIP Advances 9, 075123 (2019).

21. Operations of hydrogenated diamond metal-oxide-semiconductor field-effect transistors after annealing at 500 °C
    J. Liu, H. Ohsato, B. Da, T. Teraji, A. Kobayashi, H. Fujioka, Y. Koide
    Journal of Physics D: Applied Physics 52, 315104 (2019).

22. AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature
    K. Nakamura, A. Kobayashi, K. Ueno, J. Ohta, H. Fujioka
    Scientific Reports 9, 6254 (2019). OPEN ACCESS

23. Wide range doping controllability of p-type GaN films prepared via pulsed sputtering
    T. Fudetani, K. Ueno, A. Kobayashi H. Fujioka
    Applied Physics Letters 114, 032102 (2019).

24. Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering
    Y. Sakurai, K. Ueno, A. Kobayashi, J. Ohta, H. Miyake, H. Fujioka
    APL Materials 6, 111103 (2018). OPEN ACCESS

25. Epitaxial Growth of Thick Polar and Semipolar InN Films on Yttria-Stabilized Zirconia Using Pulsed Sputtering Deposition
    A. Kobayashi, M. Oseki, J. Ohta, H. Fujioka
    Physica Status Solidi B 255, 1700320 (2018).

26. Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering
    K. Ueno, T. Fudetani, Y. Arakawa, A. Kobayashi, J. Ohta, H. Fujioka
    APL Materials 5, 126102 (2017).

27. Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO
    A. Kobayashi, J. Ohta, H. Fujioka
    Scientific Reports 7, 12820 (2017).

28. Highly conductive Ge-doped GaN epitaxial layers prepared by pulsed sputtering
    K. Ueno, Y. Arakawa, A. Kobayashi, J. Ohta, H. Fujioka
    Applied Physics Express 10, 101002 (2017).

29. Epitaxial growth of semipolar InAlN films on yttria-stabilized zirconia
    M. Oseki, A. Kobayashi, J. Ohta, M. Oshima, H. Fujioka
    Physica Status Solidi B 254, 1700211 (2017).

30. Characterization of GaN films grown on hafnium foils by pulsed sputtering deposition
    Hyeryun Kim, Jitsuo Ohta, Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka
    Physica Status Solidi A 214, 1700244 (2017).

31. Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils
    Hyeryun Kim, Jitsuo Ohta, Kohei Ueno, Atsushi Kobayashi, Mari Morita, Yuki Tokumoto, Hiroshi Fujioka
    Scientific Reports 7, 2112 (2017).

32. Electrical properties of Si-doped GaN prepared using pulsed sputtering
    Y. Arakawa, K. Ueno, H. Imabeppu, A. Kobayashi, J. Ohta, H. Fujioka
    Applied Physics Letters 110, 042103 (2017).

33. High-current-density indium nitride ultrathin-film transistors on glass substrates
    T. Itoh, A. Kobayashi, J. Ohta, and H. Fujioka
    Applied Physics Letters 109, 142104 (2016).

34. Epitaxial growth of In-rich InGaN on yttria-stabilized zirconia and its application to metal–insulator–semiconductor field-effect transistors
    A. Kobayashi, K. S. Lye, K. Ueno, J. Ohta, H. Fujioka
    Journal of Applied Physics 120, 085709 (2016).

35. High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering
    Y. Arakawa, K. Ueno, A. Kobayashi, J. Ohta, H. Fujioka
    APL Materials 4, 086103 (2016).

36. InN thin-film transistors fabricated on polymer sheets using pulsed sputtering deposition at room temperature
    K. S. Lye, A. Kobayashi, K. Ueno, J. Ohta, H. Fujioka
    Applied Physics Letters 109, 032106 (2016).

37. Epitaxial growth of GaN films on nearly lattice-matched hafnium substrates using a low-temperature growth technique
    H. R. Kim, J. Ohta, S. Inoue, K. Ueno, A. Kobayashi, and H. Fujioka
    APL Materials 4, 076104 (2016).

38. Fabrication of InGaN thin-film transistors using pulsed sputtering deposition
    T. Itoh, A. Kobayashi, K. Ueno, J. Ohta, and H. Fujioka
    Scientific Reports 6, 29500 (2016).

39. Investigation of anisotropic wafer bending curvature in a-plane GaN films grown on r-plane sapphire substrates
    J. W. Shon, J. Ohta, S. Inoue,  A. Kobayashi, and H. Fujioka
    Journal of Crystal Growth 424, 11 (2015). 

40. Structural properties of GaN films grown on multilayer graphene films by pulsed sputtering
    J. W. Shon, J. Ohta, K. Ueno,  A. Kobayashi, and H. Fujioka
    Applied Physics Express 7, 085502 (2014). 

41. Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering
    J. W. Shon, J. Ohta, K. Ueno,  A. Kobayashi, and H. Fujioka
    Scientific Reports 4, 5325 (2014). 

42. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering
    T. Watanabe, J. Ohta, T. Kondo, M. Ohashi, K. Ueno, A. Kobayashi, and H. Fujioka
    Applied Physics Letters 104, 182111 (2014).

43. Solid-phase epitaxy of InOxNy alloys via thermal oxidation of InN films on yttria-stabilized zirconia
    A. Kobayashi, T. Itoh, J. Ohta, M. Oshima, and H. Fujioka
    Phys. Status Solidi RRL 8, 3627 (2014).

44. Field-effect transistors based on cubic indium nitride
    M. Oseki, K. Okubo, A. Kobayashi, J. Ohta, and H. Fujioka
    Scientific Reports 4, 3951 (2014). 

45. Theoretical study of InN growth on Mn-stabilized zirconia (111) substrates
    Y. Guo, S. Inoue, A. Kobayashi, J. Ohta, and H. Fujioka
    Thin Solid Films 551, 110 (2014).

46. Atomic scattering spectroscopy for determination of the polarity of semipolar AlN grown on ZnO
    A. Kobayashi, K. Ueno, J. Ohta, M. Oshima, and H. Fujioka
    Appl. Phys. Lett. 103, 192111 (2013).

47. Electrical properties of amorphous-Al2O3/single-crystal ZnO heterointerfaces
    J. Liu, A. Kobayashi, J. Ohta, H. Fujioka, and M. Oshima
    Applied Physics Letters 103, 172101 (2013).

48. Structural Properties of m-Plane InAlN Films Grown on ZnO Substrates with Room-Temperature GaN Buffer Layers
    T. Kajima, A. Kobayashi, K. Ueno, J. Ohta, H. Fujioka, and M. Oshima
    Appl. Phys. Express 6, 021003 (2013).

49. Theoretical Investigation of the Polarity Determination for c-Plane InN Grown on Yttria-Stabilized Zirconia (111) Substrates with Yttrium Surface Segregation
    Y. Guo, S. Inoue, A. Kobayashi, J. Ohta, and H. Fujioka
    Appl. Phys. Express 6, 021002 (2013).

50. Electron mobility of ultrathin InN on yttria-stabilized zirconia with two-dimensionally grown initial layers
    K. Okubo, A. Kobayashi, J. Ohta, M. Oshima, and H. Fujioka
    Appl. Phys. Lett. 102, 022103 (2013).

51. Theoretical study of the initial stage of InN growth on cubic zirconia (111) substrates
    Y. Guo, S. Inoue, A. Kobayashi, J. Ohta, and H. Fujioka
    Phys. Status Solidi RRL 7, 207 (2013).

52. Band Configuration of SiO2/m-Plane ZnO Heterointerface Correlated with Electrical Properties of Al/SiO2/ZnO Structures
    J. Liu, A. Kobayashi, K. Ueno, J. Ohta, H. Fujioka, and M. Oshima
    Japanese Journal of Applied Physics 52, 011101 (2013).

53. Polarity control and growth mode of InN on yttria-stabilized zirconia (111) surfaces
    A. Kobayashi, K. Okubo, J. Ohta, M. Oshima, and H. Fujioka
    Phys. Status Solidi A 209, 2251 (2012).

54. Polarity replication across m-plane GaN/ZnO interfaces
    A. Kobayashi, T. Ohnishi, M. Lippmaa, Y. Oda, A. Ishii, J. Ohta, M. Oshima, and H. Fujioka
    Applied Physics Letters 99, 181910 (2011).

55. Coherent growth of r-plane GaN films on ZnO substrates at room temperature
    A. Kobayashi,  K. Ueno, J. Ohta, and H. Fujioka
    Phys. Status Solidi A 208, 834 (2011).

56. Demonstration of enhanced optical polarization for improved deep ultraviolet light extraction in coherently-grown semipolar Al0.83Ga0.17N/AlN on ZnO substrates
    K. Ueno, A. Kobayashi, J. Ohta, M. Oshima, and H. Fujioka
    Appl. Phys. Lett. 99, 121906 (2011).

57. X-ray reciprocal space mapping study on semipolar InAlN films coherently grown on ZnO substrates
    T. Kajima, A. Kobayashi, K. Shimomoto, K. Ueno, T. Fujii, J. Ohta, H. Fujioka, and M. Oshima
    Phys. Stat. Solidi RRL 5, 400 (2011).

58. Polarity dependence of structural and electronic properties of Al2O3/InN interfaces
    K. Okubo, A. Kobayashi, J. Ohta, H. Fujioka, and M. Oshima
    Appl. Phys. Express 4, 091002 (2011).

59. Dependence on composition of the optical polarization properties of m-plane InxGa1−xN commensurately grown on ZnO
    H. Tamaki, A. Kobayashi, J. Ohta, M. Oshima, and  H. Fujioka
    Applied Physics Letters 99, 061912 (2011).

60. Band offsets of polar and nonpolar GaN/ZnO heterostructures determined by synchrotron radiation photoemission spectroscopy
    J. W. Liu, A. Kobayashi, S. Toyoda, H. Kamada, A. Kikuchi, J. Ohta, H. Fujioka, H. Kumigashira, and M. Oshima
    Phys. Status Solidi B 248, 956 (2011).

61. Growth of group III nitride nanostructures on nano-imprinted sapphire substrates
    F.Y. Shih, A. Kobayashi, S. Inoue, J. Ohta, M. Oshima and H. Fujioka
    Thin Solid Films 519, 6534 (2011).

62. Fabrication of densely packed arrays of GaN nanostructures on nano-imprinted substrates
    F.Y. Shih, A. Kobayashi, S. Inoue, J. Ohta and H. Fujioka
    J. Cryst. Growth 319, 102 (2011).

63. Improvements in Optical Properties of Semipolar r-Plane GaN Films Grown Using Atomically Flat ZnO Substrates and Room-Temperature Epitaxial Buffer Layers
    A. Kobayashi, S. Kawano, K. Ueno, J. Ohta, and H. Fujioka
    Jpn. J. Appl. Phys. 49, 100202 (2010).

64. Optical polarization characteristics of m-plane InGaN films coherently grown on ZnO substrates
    A. Kobayashi, K. Shimomoto, J. Ohta, H. Fujioka, M. Oshima
    Phys. Status Solidi RRL 4, 188 (2010).

65. Electronic structures of c-plane and a-plane AlN/ZnO heterointerfaces determined by synchrotron radiation photoemission spectroscopy
    J. W. Liu, A. Kobayashi, K. Ueno, S. Toyoda, A. Kikuchi, J. Ohta, H. Fujioka, H. Kumigashira, M. Oshima
    Appl. Phys. Lett. 97, 252111 (2010).

66. Characteristics of Thick m-Plane InGaN Films Grown on ZnO Substrates Using Room Temperature Epitaxial Buffer Layers
    K. Shimomoto, A. Kobayashi, K. Ueno, J. Ohta, M. Oshima, H. Fujioka
    Appl. Phys. Express 3, 061001 (2010).

67. Improvement in the Crystalline Quality of Semipolar AlN(1-102) Films by Using ZnO Substrates with Self-Organized Nanostripes
    K. Ueno, A. Kobayashi, J. Ohta, and H. Fujioka
    Appl. Phys. Express 3, 041002 (2010).

68. Structural Characteristics of GaN/InN Heterointerfaces Fabricatedat Low Temperatures by Pulsed Laser Deposition
    T. Fujii, A. Kobayashi, K. Shimomoto, J. Ohta, M. Oshima, H. Fujioka
    Appl. Phys. Express 3, 021003 (2010).

69. Layer-by-Layer Growth of InAlN Films on ZnO(000-1) Substrates at Room Temperature
    T. Kajima, A. Kobayashi, K. Shimomoto, K. Ueno, T. Fujii, J. Ohta, , M. Oshima, H. Fujioka
    Appl. Phys. Express 3, 021001 (2010)

70. Investigation on the conversion efficiency of InGaN solar cells fabricated on GaN and ZnO substrates
    S. Inoue, M. Katoh, A. Kobayashi, J. Ohta, H. Fujioka
    Phys. Status Solidi RRL 4, 88 (2010).

71. Structural properties of semipolar AlxGa1-xN films grown on ZnO substrates using room temperature epitaxial buffer layers
    K. Ueno, A. Kobayashi, J. Ohta, and H. Fujioka
    Phys. Status Solidi A 207, 2149 (2010).

72. Structural characteristics of semipolar InN (11-2l) films grown on yttria stabilized zirconia substrates
    T. Fujii, A. Kobayashi, J. Ohta, M. Oshima, and H. Fujioka
    Phys. Status Solidi A 203, 2269 (2010).

73. Growth Orientation Control of Semipolar InN Films Using Yttria-Stabilized Zirconia Substrates
    T. Fujii, A. Kobayashi, K. Shimomoto, J. Ohta, M. Oshima, and H. Fujioka
    Jpn. J. Appl. Phys 49, 080204 (2010).

74. Characteristics of m-Plane InN Films Grown on ZnO Substrates at Room Temperature by Pulsed Laser Deposition
    K. Shimomoto, A. Kobayashi, K. Mitamura, K. Ueno, J. Ohta, M. Oshima, and H. Fujioka
    Jpn. J. Appl. Phys 49, 080202 (2010).

75. Room-Temperature Epitaxial Growth of High-Quality m-Plane InAlN Films on Nearly Lattice-Matched ZnO Substrates
    T. Kajima, A. Kobayashi, K. Ueno, K. Shimomoto, T. Fujii, J. Ohta, H. Fujioka, and M. Oshima
    Jpn. J. Appl. Phys. 49, 070202 (2010).

76. Structural and Optical Properties of Nonpolar AlN (11-20) Films Grown on ZnO (11-20) Substrates with a Room-Temperature GaN Buffer Layer
    K. Ueno, A. Kobayashi, J. Ohta, and H. Fujioka
    Jpn. J. Appl. Phys. 49, 060213 (2010).

77. Epitaxial growth of high purity cubic InN films on MgO substrates using HfN buffer layers by pulsed laser deposition
    R. Ohba, J. Ohta, K. Shimomoto, T. Fujii, K. Okamoto, A. Aoyama, T. Nakano, A. Kobayashi, H. Fujioka, M. Oshima
    J. Sol. Stat. Chem. 182, 2887 (2009).

78. Epitaxial growth of InN films on lattice-matched EuN buffer layers
    K. Shimomoto, J. Ohta, T. Fujii, R. Ohba, A. Kobayashi, M. Oshima, H. Fujioka
    J. Cryst. Growth 311, 4483 (2009).

79. Growth of group III nitride films by pulsed electron beam deposition
    J. Ohta, K. Sakurada, F.-Y. Shih, A. Kobayashi, H. Fujioka
    J. Sol. Stat. Chem. 182, 1241 (2009).

80. Room-temperature epitaxial growth of high-quality m -plane InGaN films on ZnO substrates
    K. Shimomoto, A. Kobayashi, K. Ueno,  J. Ohta, M. Oshima, H. Fujioka, H. Amanai, S. Nagao, H. Horie
    Phys. Status Solidi RRL 3, 124 (2009).

81. Room-Temperature Epitaxial Growth of High Quality AlN on SiC by Pulsed Sputtering Deposition
    K. Sato, J. Ohta, S. Inoue, A. Kobayashi, H. Fujioka
    Appl. Phys. Express 2, 011003 (2009).

82. Characteristics of InN grown directly on Al2O3 (0001) substrates by pulsed laser deposition
    K. Mitamura, T. Honke, J. Ohta, A. Kobayashi, H. Fujioka, M. Oshima
    J. Cryst. Growth 311, 1316 (2009).

83. Room temperature growth of semipolar AlN (1-102) films on ZnO (1-102) substrates by pulsed laser deposition
    K. Ueno, A. Kobayashi, J. Ohta, H. Fujioka, H. Amanai, S. Nagao, H. Horie
    Phys. Stat. Solidi RRL 3, 58 (2009).

84. Low-temperature growth of high quality AlN films on carbon face 6H-SiC
    M. H. Kim, J. Ohta, A. Kobayashi, H. Fujioka, M. Oshima
    Phys. Stat. Solidi RRL 2, 13 (2008).

85. Growth of a -plane GaN on lattice-matched ZnO substrates using a room-temperature buffer layer
    A. Kobayashi, S. Kawano, K. Ueno,  J. Ohta, H. Fujioka, H. Amanai, S. Nagao, and H. Horie
    Appl. Phys. Lett. 91, 191905 (2007).

86. Structural properties of GaN grown on Zn-face ZnO at room temperature
    A. Kobayashi , Y. Shirakura, K. Miyamura, J. Ohta, and H. Fujioka
    J. Cryst. Growth 305, 70 (2007).

87. Room temperature epitaxial growth of m-plane GaN on lattice-matched ZnO substrates
    A. Kobayashi, S. Kawano, Y. Kawaguchi, J. Ohta, and H. Fujioka
    Appl. Phys. Lett. 90, 041908 (2007).

88. Epitaxial growth mechanisms of AlN on SiC substrates at room temperature
    M. H. Kim, J. Ohta, A. Kobayashi, H. Fujioka, and M. Oshima
    Appl. Phys. Lett. 91 , 151903 (2007).

89. Epitaxial growth of nonpolar AlN films on ZnO substrates using room temperature grown GaN buffer layers
    K. Ueno, A. Kobayashi, J. Ohta, H. Fujioka, H. Amanai, S. Nagao, and H. Horie
    Appl. Phys. Lett. 91, 081915 (2007).

90. Low temperature epitaxial growth of GaN films on LiGaO2 substrates
    K. Sakurada, A. Kobayashi, Y. Kawaguchi, J. Ohta, and H. Fujioka
    Appl. Phys. Lett. 90 , 211913 (2007).

91. Growth temperature dependence of structural properties for AlN films on ZnO (000-1) substrates
    K. Ueno, A. Kobayashi, J. Ohta, and H. Fujioka
    Appl. Phys. Lett. 90 , 141908 (2007).

92. Room temperature epitaxial growth of AlGaN on ZnO by pulsed lased deposition
    A. Kobayashi, J. Ohta, Y. Kawaguchi, and H. Fujioka
    Appl. Phys. Lett. 89, 111918 (2006).

93. Characteristics of Single Crystal ZnO Annealed in a Ceramic ZnO Box and Its Application for Epitaxial Growth of GaN
    A. Kobayashi, J. Ohta, and H. Fujioka
    Jpn. J. Appl. Phys. 45, 5724 (2006).

94. Characteristics of InGaN with High In Concentrations Grown on ZnO at Low Temperatures
    A. Kobayashi, J. Ohta, and H. Fujioka
    Jpn. J. Appl. Phys. 45, L611 (2006).

95. Low temperature epitaxial growth of In0.25Ga0.75N on lattice-matched ZnO by pulsed laser deposition
    A. Kobayashi, J. Ohta, and H. Fujioka
    J. Appl. Phys. 99, 123513 (2006) .

96. Polarity control of GaN grown on ZnO (000-1) surfaces
    A. Kobayashi, Y. Kawaguchi, J. Ohta, H. Fujioka, K. Fujiwara, and A. Ishii
    Appl. Phys. Lett. 88, 181907 (2006) .

97. Layer-by-Layer Growth of AlN on ZnO (000-1) Substrates at Room Temperature
    K. Ueno, A. Kobayashi, J. Ohta, and H. Fujioka
    Jpn. J. Appl. Phys. 45 , L1139 (2006).

98. Effects of low-temperature-grown buffers on pulsed-laser deposition of GaN on LiNbO3
    Y. Tsuchiya, M. Oshima, A. Kobayashi, J. Ohta, and H. Fujioka
    J. Vac. Sci. Tech. A 24, 2021 (2006).

99. Characteristics of GaN/ZrB2 Heterointerfaces Prepared by Pulsed Laser Deposition
    Y. Kawaguchi, A. Kobayashi, J. Ohta, and H. Fujioka
    Jpn. J. Appl. Phys. 45, 6893 (2006).

100. Investigation of the initial stage of GaN epitaxial growth on 6H-SiC (0001) at room temperature
     M. H. Kim, M. Oshima, H. Kinoshita, Y. Shirakura, K. Miyamura, J. Ohta, A. Kobayashi, and H. Fujioka
     Appl. Phys. Lett. 89 , 031916 (2006).

101. Heteroepitaxial growth of GaN on atomically flat LiTaO3(0001) using low-temperature AIN buffer layers
     Y. Tsuchiya, A. Kobayashi, J. Ohta, H. Fujioka, and M. Oshima
     J. Cryst. Growth 293, 22 (2006).

102. Epitaxial growth of InN on nearly lattice-matched (Mn,Zn)Fe2O4
     J. Ohta, K. Mitamura, A. Kobayashi, T. Honke, H. Fujioka, and M. Oshima
     Solid State Commun. 137, 208 (2006).

103. Room-temperature epitaxial growth of GaN on lattice-matched ZrB2 substrates by pulsed-laser deposition
     Y. Kawaguchi, J. Ohta, A. Kobayashi, and H. Fujioka
     Appl. Phys. Lett. 87, 221907 (2005).

104. GaN Heteroepitaxial Growth on LiTaO3(0001) Step Substrates by Pulsed Laser Deposition
     Y. Tsuchiya, A. Kobayashi, J. Ohta, H. Fujioka, and M. Oshima
     Jpn. J. Appl. Phys. 44, L1522 (2005).

105. GaN heteroepitaxial growth on LiNbO3(0001) step substrates with AlN buffer layers
     Y. Tsuchiya, A. Kobayashi, J. Ohta, H. Fujioka, and M. Oshima
     Phys. Status Solidi A 202, R145 (2005).

106. Room Temperature Layer by Layer Growth of GaN on Atomically Flat ZnO
     A. Kobayashi, H. Fujioka, J. Ohta, and M. Oshima
     Jpn. J. Appl. Phys. 43, L53 (2004).

107. Effect of ambient gas on pulsed laser deposition of group III nitrides
     S. Ito, H. Fujioka, J. Ohta, A. Kobayashi, T. Honke, and M. Oshima
     Thin Solid Films 457, 118 (2004). 

1. "Epitaxial growth of NbN superconductors on lattice-matched AlN wide-bandgap semiconductors"
   Atsushi Kobayashi, Kohei Ueno, and Hiroshi Fujioka
   SPIE Photonics West 2023 - Gallium Nitride Materials and Devices XVIII (Conference 12421), San Francisco, 2023年1月30日

2. 「NbN/AlNヘテロ構造の作製とAlN極性反転技術への応用」
   小林篤，上野耕平，藤岡洋
   日本学術振興会 第R032産業イノベーションのための結晶成長委員会 第10回研究会「AlNおよびAlGaNの結晶成長と深紫外LEDの最前線」, 三重大学,  2023年1月12日

3. "Epitaxial integration of NbN superconductors with AlN",
   Atsushi Kobayashi, Shunya Kihira, Kohei Ueno, and Hiroshi Fujioka
   IWSingularity 2022, 名古屋国際会議場/Online, 2022年1月12日

4. 「窒化物半導体と超伝導体の融合をめざして」
   小林篤
   2021年度応用物理学会中国四国支部若手半導体研究会, オンライン, 2021年8月23日

5. "Superconducting NbN/AlN nanostructures prepared by sputtering"
   Atsushi Kobayashi, Kohei Ueno, and Hiroshi Fujioka
   ISPlasma2021/IC-PLANTS2021, オンライン, 2021年3月7-11日

6. 「InN系窒化物半導体のパルススパッタリング成長とFET応用」
   小林篤，上野耕平，藤岡洋
   第10回ナノ構造・エピタキシャル成長講演会，Fr-I3，名古屋大学，2018年7月13日

7. 「高移動度窒化物半導体の薄膜トランジスタ応用」
   小林篤，上野耕平，太田実雄，藤岡洋
   多元物質科学研究所 若手研究者交流講演会－機能性材料合成と特性計測－，東北大学，2017年2月15日

8. 「酸化亜鉛基板上への窒化物半導体低温成長」
   小林篤，太田実雄，藤岡洋
   第6回窒化物半導体結晶成長講演会，I-St-2，名城大学，2014年7月

9. "Low-temperature epitaxial growth of nonpolar and semipolar group-III nitrides on ZnO substrates"
   A. Kobayashi, T. Kajima, H. Tamaki, J. Ohta, M. Oshima, H. Fujioka
   2013 JSAP-MRS Joint Symposia Symposium J, Kyoto  18p-M6-3, 2013年9月

10. 「パルススパッタ堆積法によるZnO基板上へのm面InGaN低温成長」（講演奨励賞記念講演）
    小林篤，太田実雄，藤岡洋，尾嶋正治，天内英貴，長尾哲，堀江秀善
    第56回 応用物理学関係連合講演会，30a-ZJ-31，筑波大学，2009年3月

1. "Feasibility of Fabricating Large-Area Inorganic Crystalline Semiconductor Devices"
   J. Ohta, K. Ueno, A. Kobayashi, H. Fujioka
   in Intelligent Nanosystems for Energy, Information and Biological Technologies, edited by J. Sone and S. Tsuji, Springer, 2016.

2. 「窒化物基板および格子整合基板の成長とデバイス特性」　監修：天野浩、シーエムシー出版 (2009)
   (分筆)第3章5節 『PXD法を用いたZnO基板上への窒化物成長』 小林篤、藤岡洋

1. 「AlNワイドギャップ半導体上へのNbN超伝導体エピタキシャル成長」
   小林 篤、上野 耕平、藤岡 洋
   応用物理 91, 411-415 (2022).
   英語版 "Epitaxial growth of superconducting NbN on wide-bandgap AlN"
   A. Kobayashi, K. Ueno, H. Fujioka
   JSAP Reiew, 220408 (2022). 

2. 2021年の化学 ＜注目の論文＞超伝導体と半導体の機能融合
   小林 篤
   化学, 2021年10月号

3. 「スパッタリング法による高品質窒化物半導体の形成とデバイス応用」
   藤岡 洋、上野 耕平、小林 篤、太田 実雄
   応用物理 86, 576 (2017).

4. "GaN-Based Light-Emitting Diodes with Graphene Buffers for Their Application to Large-Area Flexible Devices"
   J. Ohta, J.-W. Shon, K. Ueno, A. Kobayashi, H. Fujioka
   IEICE Ttans. Electron. Vol.E100–C, NO.2, 161 (2017).

5. 「室温結晶成長技術を用いた高輝度緑色発光素子用材料の開発」
   小林 篤、藤岡 洋
   未来材料 11, 36 (2011).

6. 「室温結晶成長を用いたフレキシブルエレクトロニクスの開発」
   小林篤、太田実雄、藤岡洋
   未来材料 9, 16 (2009).

7. 「III族窒化物室温成長バッファー層の評価」
   太田実雄、小林篤、藤岡洋、尾嶋正治
   日本結晶成長学会誌 32、82 (2005).

1. "Feasibility of Low-Cost Micro-LED Manufacturing with Sputtering"
   H. Fujioka, K. Ueno, A. Kobayashi
   International Display Workshops Volume 28 (IDW '21) pp. 213, Virtual Conference (2021).
   DOI: https://doi.org/https://doi.org/10.36463/idw.2021.0213