AtLv-AlGaN
Atomic-level control of AlGaN hetero-interfaces for deep-UV LED
FY2023〜FY2025
Project overview
FY2023-FY2025: The purpose of this project is to develop deep-ultraviolet LEDs that contribute to the destruction and inactivation of RNA and DNA of coronaviruses and bacteria. Specifically, (1) a team from Poland and Japan will analyze physical properties such as adsorption probabilities of precursor atoms and molecules on the crystal growth surface, and (2) a team from Bulgaria will develop a digital twin (a digital replica of real space): step dynamics simulation code implementing the obtained physical properties. (3) A team from Japan will predict the crystal growth conditions to obtain atomically flat surfaces/interfaces by machine learning using the developed digital twin. Based on the above findings, (4) a team from Japan will fabricate deep-ultraviolet LEDs by AlGaN metal-organic vapor phase epitaxy (MOVPE), contributing to the realization of a clean, safe, and secure society through joint research by four teams from three countries.
Yoshihiro Kangawa
Kyushu University, Japan
Process informatics for III-Nitride MOVPE
Vesselin Tonchev
Sofia University, Bulgaria
Combining analytical and numerical approaches to elucidate the model systems behavior with an eye on validating these findingfindings with data from real experiments
Paweł Kempisty
Institute of High Pressure Physics, Polish Academy of Sciences, Poland
First-principles calculations for physical parameters of surface processes