As electronic devices shrink, their nanoscale properties become more and more important. We use nanoscale spectroscopy techniques to study local structure and conductivity of inorganic, organic, and hybrid semiconductor devices, to resolve changes in dopant incorporation, activation, and mobility.

Silicon nanowires:

We use infrared spectroscopic near-field techniques to study dopants and interfaces in silicon nanowires, in collaboration with the Cahoon group.

For more details, see our publications in Nano Letters and ACS Nano.