• Selected as a participant in NextProf Nexus 2024 cohort.

• Our new work on superlattice materials for a 'universal' memory is described in a Stanford School of Engineering news story (Feb 2024). IEEE Spectrum also covered our work.

• Asir Intisar Khan served as a session chair at MRS Fall 2023, Symposium 1D and 2D Materials—Electronic Properties and Device Applications); Session: EL07.12: 1D and 2D Materials—Memory Devices and Neuromorphic Computing (Dec 2023).

• Asir Intisar Khan is awarded the Best Presenter Award in the Electronic Materials and Photonics Division at AVS69 Conference (Nov 2023).

• Asir Intisar Khan gave an invited talk at EPCOS 2023 and at IBM Research, Zurich (Oct 2023).

• Asir Intisar Khan wins a Best Student Presenter Award at TechCon 2023 (Sept. 2023).

• Asir Intisar Khan joined EECS, University of California, Berkeley as a Postdoctoral Scholar (Sept. 2023)

• Asir Intisar Khan received his PhD in Electrical Engineering from Stanford University (August 2023).

• Asir Khan received the AVS Russell & Sigurd Varian Award for his work on "novel materials for low-power memory and energy-efficient nanoelectronics" (August 2023)

• Asir Intisar Khan offered an invited colloquium seminar at Physics & Astronomy colloquia at San Francisco State University (2023). "Superlattice and Nanocomposite Chalcogenides for Energy Efficient Phase-Change Memory"

• Asir Khan received the 2022 MRS Fall Meeting Gold Student Award (2022)

He also received the Best Student Presenter Award at the 2022 MRS Fall Meeting, for the talk "Chalcogenide-Superlattice Interfaces and Intermixing Modulating Phase-Change Memory Performance"

And here is the Stanford EE news story, about both awards.

•  Asir Intisar Khan delivered an invited tutorial talk at 2022 IEEE Integrated Reliability Workshop (IIRW) (2022). "Reliability of Energy-Efficient Phase Change Memory Based on Novel Superlattices and Nanocomposites"

• Asir Intisar Khan offered an invited colloquium seminar at Materials Science and Engineering, University of Texas at Dallas (2022). "Superlattice and Nanocomposite Chalcogenides for Energy Efficient Phase-Change Memory"

• Asir Intisar Khan offered a seminar on energy-efficient phase-change memory at IBM TJ Watson Research Center, NY (2022).

• Asir Intisar Khan and Xiangjin Wu's work on the interface-controlled low resistance drift in phase-change memory is highlighted on the Cover of IEEE Electron Device Letters (2022). 

• Asir Intisar Khan receives the IEEE EDS PhD Student Fellowship (2022)

 Stanford Electrical Engineering department also puts out a press release

• Asir Intisar Khan wins Best Student Paper Award at the IEEE VLSI Symposium (2022). Here is the Stanford EE news story.

• Asir Intisar Khan is awarded a travel grant at the IEEE VLSI Symposium (2022)

• Asir Intisar Khan's work is selected as a conference highlight at the IEEE VLSI Symposium (2022)

This is paper T4-1: "First Demonstration of Ge2Sb2Te5-Based Superlattice Phase Change Memory with Low Reset Current Density (~3 MA/cm2) and Low Resistance Drift (~0.002 at 105ºC)"

• Asir Intisar Khan's paper on flexible phase-change memory is covered in a Stanford/Precourt press release (2021)

very good IEEE Spectrum article: This Memory Tech is Better when It's Bendy

other good stories at Forbes, C&EN (Flexible Memory Uses Less Power) and at ScienceLine

additional coverage from EE Times, Physics World, Ars Technica, and tom'sHARDWARE, and Stanford EE

also picked up by EurekAlert!, SCIENMAG, TechXplore, eurasiareview, MIRAGE News, The Hack Posts, NEWSBREAK, TechnoSports, MINNEWS, Aroged, Insider Voice, California18, sciencesprings, Hardware Upgrade (in Italian), and some social media posts

• Asir Intisar Khan receives the Stanford Graduate Fellowship (2020)