2025
Integrated Design of Electrically Configurable Ferroelectric and Redox-Based Memristors for Hardware-Implemented Reservoir Computing
Jung-Kyu Lee, Yongjin Park, Euncho Seo, Jong-Ho Lee, Sungjoon Kim, and Sungjun Kim*
Advanced Science (2025), IF: 14.3, JCR: 6.6%
Strategy for the Integrated Design of Ferroelectric and Resistive Memristors for Neuromorphic Computing Applications
Jung-Kyu Lee, Yongjin Park, Euncho Seo, Woohyun Park, Chaewon Youn, Sejoon Lee,* and Sungjun Kim*
ACS Applied Electronic Materials (2025)
2024
Investigation of the Versatile Utilization of Three-Dimensional Vertical Resistive Random-Access Memory in Neuromorphic Computing
Dongyeol Ju, Minseo Noh, Subaek Lee, Jungwoo Lee, Sungjun Kim,* and Jung-Kyu Lee*
ACS Applied Materials & Interfaces (2024), IF: 8.5
Impact of HfO2 Dielectric Layer Placement in Hf0.5Zr0.5O2-Based Ferroelectric Tunnel Junctions for Neuromorphic Applications
Juri Kim, Yongjin Park, Jungwoo Lee, Eunjin Lim, Jung-Kyu Lee,* and Sungjun Kim*
Advanced Materials Technologies (2024)
Multifunctional HfAlO thin film: Ferroelectric tunnel junction and resistive random access memory
Yongjin Park, Jong-Ho Lee, Jung-Kyu Lee,* and Sungjun Kim*
Journal of Chemical Physics (2024)
Synaptic Characteristics and Vector-Matrix Multiplication Operation in Highly Uniform and Cost-Effective Four-Layer Vertical RRAM Array
Jihyung Kim, Subaek Lee, Sungjoon Kim, Seyoung Yang, Jung-Kyu Lee, Tae-Hyeon Kim, Muhammad Ismail, Chandreswar Mahata, Yoon Kim, Woo Young Choi,* and Sungjun Kim*
Advanced Functional Materials (2024), IF: 18.5, JCR: 4.3%
2023
Preliminary investigation on the implementation of an artificial synapse using TaOx-based memristor with thermally oxidized active layer
Juri Kim, Yongjin Park, Jung-Kyu Lee,* and Sungjun Kim*
Journal of Chemical Physics (2023)
Noise-assisted transport mechanism analysis and synaptic characteristics in ZrOX/HfAlOX-based memristor for neuromorphic systems
Jungang Heo, Youngboo Cho, Hyeonseung Ji, Min-Hwi Kim, Jong-Ho Lee, Jung-Kyu Lee,* and Sungjun Kim*
APL Materials (2023)
Reservoir Computing for Temporal Data Processing Using Resistive Switching Memory Devices Based on ITO Treated With O2 Plasma
Jung-Kyu Lee, Osung Kwon, Beomki Jeon, and Sungjun Kim*
IEEE Transactions on Electron Devices (2023)
Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems
Seyeong Yang, Taegyun Kim, Sunghun Kim, Daewon Chung, Tae-Hyeon Kim, Jung Kyu Lee, Sungjoon Kim, Muhammad Ismail, Chandreswar Mahata, Sungjun Kim,* and Seongjae Cho*
Nanoscale (2023)
Short-term memory characteristics in n-type-ZnO/p-type-NiO heterojunction synaptic devices for reservoir computing
Hyojin So, Jung-Kyu Lee,* Sungjun Kim*
Applied Surface Science (2023)
Comparative analysis of low-frequency noise based resistive switching phenomenon for filamentary and interfacial RRAM devices
Jung-Kyu Lee, Sungjun Kim*
Chaos, Solitons and Fractals (2023), IF: 5.3, JCR: 3.3%
Low-Frequency Noise-Based Mechanism Analysis of Endurance Degradation in Al/αTiOx/Al Resistive Random Access Memory Devices
Jung-Kyu Lee, Juyeong Pyo and Sungjun Kim*
Materials (2023)
2022 ~
Synergistic improvement of sensing performance in ferroelectric transistor gas sensors using remnant polarization
Wonjun Shin, Jiyong Yim, Jong-Ho Bae, Jung-Kyu Lee, Seongbin Hong, Jaehyeon Kim, Yujeong Jeong, Dongseok Kwon, Ryun-Han Koo, Gyuweon Jung, Changhyeon Han, Jeonghan Kim, Byung-Gook Park, Daewoong Kwon,* and Jong-Ho Lee*
Materials Horizons (2022), IF: 12.2, JCR: 8.8%
Improved CO gas detection of Si MOSFET gas sensor with catalytic Pt decoration and pre-bias effect
Seongbin Hong, Yoonki Hong, Yujeong Jeong, Gyuweon Jung, Wonjun Shin, Jinwoo Park, Jung-Kyu Lee, Dongkyu Jang, Jong-Ho Bae, Jong-Ho Lee*
Sensors and Actuators B: Chemical (2019), IF: 8.0, JCR: 1.3%
Flicker Noise Behavior in Resistive Memory Devices With Double-Layered Transition Metal Oxide
Jung-Kyu Lee, Sunghun Jung, Byeong-In Choe, Jinwon Park, Sung-Woong Chung, Jae Sung Roh, Sung-Joo Hong, Chan Hyeong Park, Byung-Gook Park, and Jong-Ho Lee*
IEEE Electron Device Letters (2013)
Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices
Jung-Kyu Lee, Sunghun Jung, Jinwon Park, Sung-Woong Chung, Jae Sung Roh, Sung-Joo Hong, Il Hwan Cho, Hyuck-In Kwon, Chan Hyeong Park, Byung-Gook Park, and Jong-Ho Lee*
Applied Physics Letters (2012), Citations: 69
Phenomenological Analysis of Random Telegraph Noise in Amorphous TiOx-Based Bipolar Resistive Switching Random Access Memory Devices
Jung-Kyu Lee, Ju-Wan Lee, Jong-Ho Bae, Jinwon Park, Sung-Woong Chung, Jae Sung Roh, Sung-Joo Hong, and Jong-Ho Lee*
Journal of Nanoscience and Nanotechnology (2012)
Relationship Between Conduction Mechanism and Low-Frequency Noise in Polycrystalline-TiOx-Based Resistive-Switching Memory Devices
Jung-Kyu Lee, In-Tak Cho, Hyuck-In Kwon, Cheol Seong Hwang, Chan Hyeong Park, and Jong-Ho Lee*
IEEE Electron Device Letters (2012)
Reliability of bottom-gate graphene field-effect transistors prepared by using inductively coupled plasma-chemical vapor deposition
Jung-Kyu Lee, Hyun-Jong Chung, Jinseong Heo, Sunae Seo, Il Hwan Cho, Hyuck-In Kwon, and Jong-Ho Lee*
Applied Physics Letters (2011)
Extraction of trap location and energy from random telegraph noise in amorphous TiOx resistance random access memories
Jung-Kyu Lee, Ju-Wan Lee, Jinwon Park, Sung-Woong Chung, Jae Sung Roh, Sung-Joo Hong, Il-whan Cho, Hyuck-In Kwon, and Jong-Ho Lee*
Applied Physics Letters (2011), Citations: 62
Conduction and Low-Frequency Noise Analysis in Al/α-TiOX/Al Bipolar Switching Resistance Random Access Memory Devices
Jung-Kyu Lee, Jung-Kyu Lee, Hu Young Jeong, In-Tak Cho, Jeong Yong Lee, Sung-Yool Choi, Hyuck-In Kwon, and Jong-Ho Lee*
IEEE Electron Device Letters (2010), Citations: 56