Last update: May. 2025

INTERNATIONAL PATENTS             

1. France, FR3066043B1, Composant semi-conducteur memoire integrant une nano-batterie, dispositif semi-conducteur comprenant un tel composant et procede utilisant un tel dispositif

2. Europe, EP3563378B1, Verwendung elektrochemischer bauelementen zur speicherung von elektrischer energie unf information und zugehörige elektronische schaltung

3. United States, US10878900B2, Method for using electrochemical components for storage of energy and information and associated electronic circuit

INTERNATIONAL JOURNALS             

1. 2025.02 Interface effect based nano-scale TiOx vertical synapse device for high-density integration in neuromorphic computing system (Nanotechnology)

2. 2025.01 Improvement of the weight update and retention characteristics of Pr0.7Ca0.3MnO3-x ECRAM via elevated temperature training (NANOSCALE)

3. 2024.08 Linear Synaptic Weight Update in Selector-Less HfO₂ RRAM Using Al₂O₃ Built-In Resistor for Neuromorphic Computing Systems (IEEE TRANSACTIONS ON ELECTRON DEVICES)

4. 2024.05 Synapse device based neuromorphic system for biomedical applications (BIOMEDICAL ENGINEERING LETTERS)

5. 2024.01 Internal Resistor Effect of Multilayer-Structured Synaptic Device for Low-Power Operation (NANOMATERIALS)

6. 2023.12 Three dimensional vertical structural electrochemical random access memory for high density integrated synapse device (Scientific Reports)

7. 2023.07 Impact of Oxygen Reservoir Layer on 3T Oxygen Ion-based Electrochemical Random Access Memory Performance (Advanced Electronic Materials)

8. 2023.03 Role of the electrolyte layer in CMOS-compatible and oxide-based vertical three-terminal ECRAM (Journal of Materials Chemistry C)

9. 2022.11  Solid state thin electrolyte to overcome transparency-capacity dilemma of transparent supercapacitor (Scientific Reports)

10. 2022.09  Ag-Ion-Based Transparent Threshold Switching Selector with Filament-Size-Dependent Rectifying Behavior (Micromachines)

11. 2022.06  Novel training method for metal-oxide memristive synapse device to overcome trade-off between linearity and dynamic range (NANOTECHNOLOGY)

12. 2022.03  Ion-Driven Electrochemical Random-Access Memory-Based Synaptic Devices for Neuromorphic Computing Systems: A Mini-Review (Micromachines)

13. 2021.12  Alternative negative weight for simpler hardware implementation of synapse device based neuromorphic system (Scientific Report)

14. 2021.06  Multinary Data Processing Based on Nonlinear Synaptic Devices (JOURNAL OF ELECTRONIC MATERIALS)

15. 2021.05  Gradual transmittance controllable device via ion intercalation for spatial light modulators (OPTICAL MATERIALS EXPRESS)

16. 2021.01  Li memristor-based MOSFET synapse for linear I-V characteristic and processing analog input neuromorphic system (Japanese Journal of Applied Physics)

17. 2019.12  Structural Engineering of Li-Based Electronic Synapse for High Reliability (IEEE Electron Device Letters)

18. 2019.11 Electrical Effect of High-Field Induced Diffusive Metal in the Ceramic Film Deposited by the Aerosol Deposition Method (Electronic Materials Letters)

19. 2019.10 Energy-Storing Hybrid 3D Vertical Memory Structure (IEEE Electron Device Letters)

20. 2019.07 High-density BaTiO3-Cu composite films with optimized BaTiO3 matrix for embedded capacitors (Ceramics International)

21. 2019.05 Bipolar charge transport in intrinsic SiC on p- and n-Si heterostructures prepared by a room temperature aerosol deposition process (Ceramics international)

22. 2019.05 Microstructural engineering in interface-type synapse device for enhancing linear and symmetric conductance changes (Nanotechnology)

23. 2019.04 Effect of post annealing on the microstructure, mechanical properties, and failure of MoxW1-xSi2 heaters produced by self-propagating high temperature synthesis (Intermetallics)

24. 2019.02 Applicability of Aerosol Deposition Process for flexible electronic device and determining the Film Formation Mechanism with Cushioning Effects (Scientific Report)

25. 2019.02 Two-Terminal Structured Synaptic Device Using Ionic Electrochemical Reaction Mechanism for Neuromorphic System (IEEE Electron Device Letters)

26. 2018.12 Evaluation of structural and mechanical properties of aerosol-deposited bioceramic films for orthodontic brackets (Ceramics International)

27. 2018.11 Experimental and numerical study for Cu metal coatings at room temperature via powder spray process (Surface & Coatings Technology)

28. 2018.11 Titanium-oxide based nanoscale and embeddable subzero temperature sensor using MIT deformation characteristics (Nanotechnology)

29. 2018.07 Fabrication of TiO2/Cu hybrid composite films with near zero TCR and high adhesive strength via aerosol deposition (Ceramics International)

30. 2018.05 Selectable titanium-oxide-based critical and differential temperature sensor in a single devices (IEEE Electron Device Letters)

31. 2018.04 Reliability and characteristics of magnetron sputter deposited tantalum nitride for thin film resistors (Thin Solid Films)

32. 2018.03 Compensated synaptic device for improved recognition accuracy of neuromorphic system (IEEE Journal of the Electron Devices Society)

33. 2017.05 Memory and Energy Storage Dual Operation in Chalcogenide-Based CBRAM (IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY)

34. 2016.05 Effects of High-Pressure Hydrogen Annealing (HPHA) on Reliability Characteristics of RRAM (JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY)

35. 2016.04 Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application (APPLIED PHYSICS LETTERS)

36. 2015.11 The band-gap energy dependence of metal oxides on non-linear characteristics in the HfO2-based resistive random access memory (MICROELECTRONIC ENGINEERING)

37. 2015.11 Improved threshold switching characteristics of multi-layer NbOx for 3-D selector application (MICROELECTRONIC ENGINEERING)

38. 2015.09 Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application (APPLIED PHYSICS LETTERS)

39. 2015.07 Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array (IEEE ELECTRON DEVICE LETTERS)

40. 2015.04 Comprehensive analysis of electro thermally driven nanoscale insulator-metal transition SmNiO3-based selector for cross-point memory array (JAPANESE JOURNAL OF APPLIED PHYSICS)

41. 2015.03 Trade-off between number of conductance states and variability of conductance change in Pr0.7Ca0.3MnO3-based synapse device (APPLIED PHYSICS LETTERS)

42. 2015 Effects of N-Doped GeSbTe Buffer Layer on Switching Characteristics of Cu/Al2O3-Based CBRAM (ECS SOLID STATE LETTERS)

43. 2015 Structurally Engineered Stackable and Scalable 3D Titanium-Oxide Switching Devices for High-Density Nanoscale Memory (ADVANCED MATERIALS)

44. 2014.12 Hardware implementation of associative memory characteristics with analogue-type resistive-switching device (NANOTECHNOLOGY)

45. 2014.09 Effects of High-Pressure Hydrogen Annealing on the Formation of Conducting Filaments in Filament-Type Resistive Random-Access Memory (JOURNAL OF ELECTRONIC MATERIALS)

46. 2014.07 Internal resistor of multi-functional tunnel barrier for selectivity and switching uniformity in resistive random access memory (NANOSCALE RESEARCH LETTERS)

47. 2014.06 Low-temperature spin-on-glass method involving high-pressure annealing for filling high-aspect-ratio structures (JAPANESE JOURNAL OF APPLIED PHYSICS)

48. 201406 Effects of RESET Current Overshoot and Resistance State on Reliability of RRAM (IEEE ELECTRON DEVICE LETTERS)

49. 2014.02 Optimized Lightning-Rod Effect to Overcome Trade-Off Between Switching Uniformity and On/Off Ratio in ReRAM (IEEE ELECTRON DEVICE LETTERS)

50. 2014.01 Control of Cu Conductive Filament in Complementary Atom Switch for Cross-Point Selector Device Application (IEEE ELECTRON DEVICE LETTERS)

51. 2014 Engineering Oxygen Vacancy of Tunnel Barrier and Switching Layer for Both Selectivity and Reliability of Selector-Less ReRAM (IEEE ELECTRON DEVICE LETTERS)

52. 2014 Stepwise set operation for reliable switching uniformity and low operating current of ReRAMs (SOLID-STATE ELECTRONICS)

53. 2014 Dependence of reactive metal layer on resistive switching in a bi-layer structure Ta/HfOx filament type resistive random access memory (APPLIED PHYSICS LETTERS)

54. 2014 A nitrogen-treated memristive device for tunable electronic synapses (SEMICONDUCTOR SCIENCE AND TECHNOLOGY)

55. 2014 Tunnel barrier engineering of titanium oxide for high non-linearity of selector-less resistive random access memory (APPLIED PHYSICS LETTERS)

56. 2014 Non-Linear I-V Characteristics of TiOy Film by Optimizing Thickness and Trap Density for Selector-Less ReRAM (ECS SOLID STATE LETTERS)

57. 2013.12 Highly Reliable Resistive Switching Without an Initial Forming Operation by Defect Engineering (IEEE ELECTRON DEVICE LETTERS)

58. 2013.12 Vertically Stacked ReRAM Composed of a Bidirectional Selector and CB-RAM for Cross-Point Array Applications (IEEE ELECTRON DEVICE LETTERS)

59. 2013.10 Defect Engineering Using Bilayer Structure in Filament-Type RRAM (IEEE ELECTRON DEVICE LETTERS)

60. 2013.09 Interface engineering for low power and uniform resistive switching in bi-layer structural filament type ReRAM (MICROELECTRONIC ENGINEERING)

61. 2013.09 Selector-less RRAM with non-linearity of device for cross-point array applications (MICROELECTRONIC ENGINEERING)

62. 2013.07 Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories (MICROELECTRONIC ENGINEERING)

63. 2013.02 Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices (IEEE ELECTRON DEVICE LETTERS)

64. 2013 Thermally activated non-linearity of device in resistance-switching memory for cross-point array applications (APPLIED PHYSICS LETTERS)

65. 2013 Multilayer-oxide-based bidirectional cell selector device for cross-point resistive memory applications (APPLIED PHYSICS LETTERS)

66. 2012.11 Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications (PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS)

67. 2012.09 "High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx, Structure for One Selector-One Resistor Arrays" (ACS NANO)

68. 2012.08 Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices (NANOTECHNOLOGY)

69. 2012.05 Improved Switching Variability and Stability by Activating a Single Conductive Filament (IEEE ELECTRON DEVICE LETTERS)

70. 2012.05 Self-Selective Characteristics of Nanoscale VOx Devices for High-Density ReRAM Applications (IEEE ELECTRON DEVICE LETTERS)

71. 2012.04 Operation Voltage Control in Complementary Resistive Switches Using Heterodevice (IEEE ELECTRON DEVICE LETTERS)

72. 2012.04 Improved switching uniformity in resistive random access memory containing metal-doped electrolyte due to thermally agglomerated metallic filaments (APPLIED PHYSICS LETTERS)

73. 2012.02 Co-Occurrence of Threshold Switching and Memory Switching in Pt/NbOx/Pt Cells for Crosspoint Memory Applications (IEEE ELECTRON DEVICE LETTERS)

74. 2011.12 Proton Irradiation Effects on Resistive Random Access Memory With ZrOX/HfOX Stacks (IEEE TRANSACTIONS ON NUCLEAR SCIENCE)

75. 2011.10 Characterization of Resistive Switching States in W/Pr(0.7)Ca(0.3)MnO(3) for a Submicron (phi 250 nm) Via-Hole Structure (JAPANESE JOURNAL OF APPLIED PHYSICS)

76. 2011.07 Effect of Program/Erase Speed on Switching Uniformity in Filament-Type RRAM (IEEE ELECTRON DEVICE LETTERS)

77. 2011.07 Estimation of Interfacial Fixed Charge at Al2O3/SiO2 Using Slant-Etched Wafer for Solar Cell Application (JAPANESE JOURNAL OF APPLIED PHYSICS)

78. 2011.07 Noise-analysis-based model of filamentary switching ReRAM with ZrO x}/HfOx Stacks (IEEE Electron Device Letters)

79. 2011.03 Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors (Applied Physics Letters)

80. 2011.01 Improved switching characteristics of perovskite oxide-based resistance random access memory by high-pressure oxygen annealing at low temperature (Physica Status Solidi (A) Applications and Materials)

81. 2011 Thermally assisted resistive switching in Pr(0.7)Ca(0.3)MnO(3)/Ti/Ge(2)Sb(2)Te(5) stack for nonvolatile memory applications (APPLIED PHYSICS LETTERS)

82. 2011 Filament-Type Resistive Switching in Homogeneous Bi-Layer Pr0.7Ca0.3MnO3 Thin Film Memory Devices (ELECTROCHEMICAL AND SOLID STATE LETTERS)