The ferrimagnetic nodal-line semiconductor Mn3⁢Si2⁢Te6 exhibits colossal magnetoresistance (CMR) owing to chiral orbital currents (COC). COC are developed because of spin-orbit interaction (SOI) associated with the tellurium (Te) atoms. Here, we observe that upon chemical substitution of Te atoms with selenium (Se), the COC, which run along the Te-Te edges of the MnTe6 octahedra, become weaker and thus affects the angular magnetoresistance (MR) of Mn3⁢Si2⁢Te6. We find that the application of magnetic field along the easy axis leads to a considerable drop in resistance in substituted crystals, which otherwise exhibit weak MR. On the other hand, the CMR effect along the partially polarized magnetization direction is found to be only marginally affected by the substitution and persists even at a significantly high concentration of Se.