External Funding

1. Phase and Bandgap Engineering of III-Oxides in Quest of Interfacial 2DEG (approved)

Funded by Scheme for Translational and Advanced Research in Sciences (STARS), MoE 

 Scheme: STARS, Duration: 3 years. Role: PI, Approved Fund: To be sanctioned.

2. Integration of group-III oxide and III-nitride-based wide bandgap semiconductors for next-generation electronics applications (Ongoing)

Funded by Indian National Academy of Engineering, INAE

 Scheme: India - Taiwan Programme of Cooperation in S&T, Duration: 3 years. Role: PI, Approved Fund: 40.80 Lakhs.

3. Collaborative Research for Accelerated Development of Materials & devices for Energy harvesting and conservation Technologies (Ongoing)

Funded by Department of Science and Technology (DST), Government of India.

Scheme: Integrated Clean Energy Materials Acceleration Program, Duration: 3 years. Role: PI, Sanctioned Fund: 85.86 Lakhs.

4. Indigenous design and development of wideband tunable dosimeters for UV exposed environment (Ongoing).

     Funded by Science and Engineering Research Board (SERB), Department of Science and Technology (DST), Government of India.

     Scheme: Core Research Grant (CRG), Duration: 3 Years (2022-2025), Role: PI, Sanctioned Fund: 57.55 Lakhs.

5. Growth technology development of beta -gallium oxide for solar blind UV photodetector (Ongoing).

Funded by Department of Science and Technology (DST), Government of India.

Scheme: National Post-doctoral Fellowship (NPDF), Duration: 2 years, Role: Mentor, Sanctioned Fund: 19.20 Lakhs.

6. Technology Development of Compound Semiconductor Devices for Electronic and Optoelectronic Applications (Ongoing).

    Funded by Ministry of Education (MoE), Government of India.

    Scheme for Promotion of Academic and Research Collaboration Duration: 3 Years (2019-2022), Role: PI, Sanctioned Fund: 49.58 Lakhs.

7. Development of Gallium Oxide based Next Generation Power and Sensor Devices (Completed).

     Funded by Science and Engineering Research Board (SERB), Department of Science and Technology (DST), Government of India .

     Scheme: Early Career Research Award, Duration: 3 Years (2017-2021), Role: PI, Sanctioned Fund: 51.85 Lakhs.

Internal Funding

1. Growth Tool Development for Gallium Oxide Devices

Funded by Startup Research Grant, IIT Guwahati, Duration: 2 years, Role: PI, Fund: 5 lakhs.