AJAY SHANBHAG
SENIOR RESEARCH FELLOW
INDIAN INSTITUTE OF TECHNOLOGY MADRAS, INDIA
SENIOR RESEARCH FELLOW
INDIAN INSTITUTE OF TECHNOLOGY MADRAS, INDIA
Journal publications
Sruthi, M. P., Shanbhag, A., Nair, D. R., Chakravorty, A., Alam, M. A., Dasgupta, N., & Dasgupta, A. (2023). Scalable Charge-Based Compact Model for Drain Current in Fin-Shaped GaN HEMTs. IEEE Transactions on Electron Devices.
S. Sarkar, R. P. Khade, A. Shanbhag, N. DasGupta and A. DasGupta, "Suppression of Kink in the Output Characteristics of AlInN/GaN High Electron Mobility Transistors by Post-Gate Metallization Annealing," in IEEE Journal of the Electron Devices Society, doi: 10.1109/JEDS.2022.3224500.
S. Sarkar, R. P. Khade, A. Shanbhag, N. DasGupta and A. DasGupta, "Near-Ideal Subthreshold Swing in InAlN/GaN Schottky Gate High Electron Mobility Transistor Using Carbon-Doped GaN Buffer," in IEEE Transactions on Electron Devices, 2022, doi: 10.1109/TED.2022.3181539.
A. Shanbhag, M. P. Sruthi, A. Chakravorty, N. DasGupta and A. DasGupta, "Compact Modeling of Static and Transient Effects of Buffer Traps in GaN HEMTs," in IEEE Transactions on Electron Devices, vol. 69, no. 3, pp. 999-1005, March 2022, doi: 10.1109/TED.2022.3145334.
M. P. Sruthi, A. Shanbhag, A. Chakravorty, N. Dasgupta and A. Dasgupta, "Analytical Model for Gate Capacitance and Threshold Voltage in Fin-Shaped GaN HEMTs," in IEEE Transactions on Electron Devices, vol. 68, no. 9, pp. 4793-4796, Sept. 2021, doi: 10.1109/TED.2021.3096497.
Conference proceedings
Sruthi, M. P., Nidhin, K., Shanbhag, A., Nair, D. R., Chakravorty, A., DasGupta, N., & Gupta, A. D. (2022, October). "Significance of Equivalent Channel Temperature in Compact Modeling of GaN HEMTs," 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) (pp. 33-36). IEEE.
A. Shanbhag, S. M P, F. Medjdoub, A. Chakravorty, N. DasGupta and A. DasGupta, "Optimized Buffer Stack with Carbon-Doping for Performance Improvement of GaN HEMTs," 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2021, pp. 1-4, doi: 10.1109/BCICTS50416.2021.9682203.
S. M P, A. Shanbhag, A. Chakravorty, N. DasGupta and A. DasGupta, "Physics based Compact Model for Drain Current in Fin-Shaped GaN MIS-HEMTs," 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2021, pp. 1-4, doi: 10.1109/BCICTS50416.2021.9682482.
A. Shanbhag, A. P. Kholkar, S. Sawant, A. Vicente, S. Martires and S. Patil, "P300 analysis using deep neural network," 2017 International Conference on Energy, Communication, Data Analytics and Soft Computing (ICECDS), 2017, pp. 3142-3147, doi: 10.1109/ICECDS.2017.8390035.