Research

A. Ul Haq Pampori, S. A. Ahsan, S. Ghosh, S. Khandelwal and Y. S. Chauhan, "Physics-based Compact Modeling of MSM-2DEG GaN-based Varactors for THz Applications," 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM), Kobe, 2018, pp. 349-351, doi: 10.1109/EDTM.2018.8421498.

S. A. Ahsan, A. Pampori, S. Ghosh, S. Khandelwal and Y. S. Chauhan, "Impact of Via-Inductance on Stability Behavior of Large Gate-Periphery Multi-finger RF Transistors," 2019 IEEE Conference on Modeling of Systems Circuits and Devices (MOS-AK India), Hyderabad, India, 2019, pp. 47-50, doi: 10.1109/MOS-AK.2019.8902354.

S. Aamir Ahsan, A. Pampori, S. Ghosh, S. Khandelwal and Y. S. Chauhan, "A New Small-Signal Parameter Extraction Technique for Large Gate-Periphery GaN HEMTs," in IEEE Microwave and Wireless Components Letters, vol. 27, no. 10, pp. 918-920, Oct. 2017, doi: 10.1109/LMWC.2017.2746661.

S. Khandelwal et al., "ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model," in IEEE Transactions on Electron Devices, vol. 66, no. 1, pp. 80-86, Jan. 2019, doi: 10.1109/TED.2018.2867874.

Ghosh, S., Ahsan, S. A., Khandelwal, S., Pampori, A., Dangi, R., & Chauhan, Y. S. (2018). ASM-HEMT: industry standard GaN HEMT model for power and RF applications (invited paper). In M. Laudon, & B. Romanowicz (Eds.), TechConnect briefs 2018: informatics, electronics and microsystems (Vol. 4, pp. 236-239). Danville: TechConnect.