RESEARCH EXPERIENCE

• Graduate Research Assistant, Emerging Nanoscale Device (END) Research Group                   

    May 2024-present

• Undergraduate Research Assistant, Emerging Nanoscale Device (END) Research Group                   

    January 2023-April 2024

MASTER'S THESIS

Research Topics:

        • 2D Steep-Slope Field-Effect Transistors for Highly Sensitive Gas Sensors.

      • Enhanced Gas Sensing Performance of In₂O₃-Based Sensors: A Combined Experimental and DFT Study.

      • Optimization of h-BN/graphene FET based biosensors.

      • AlGaN/GaN HEMT based highly sensitive gas sensors.
Collaborator: Nazmul Hasan Naime
Supervisor: Dr. Mainul Hossain

UNDERGRADUATE THESIS
Title: Negative Capacitance Nanowire FET's for Highly Sensitive Gas Sensors
Collaborator: Nazmul Hasan Naime
Supervisor: Dr. Mainul Hossain

Field-effect transistor (FET) based gas sensors have attracted a lot of attention in recent years, due to their compact size, high sensitivity, excellent reliability, and compatibility with existing CMOS process technology. Here, we present a class of novel nanowire FET-based catalytic metal gate gas sensors with a ferroelectric layer introduced into the metal gate stack. The resulting negative capacitance (NC) effect lowers the subthreshold swing below the Boltzmann limit of 60 mV/decade and offers steep switching characteristics, leading to enhanced sensitivity. 

Title: Highly sensitive detection of ammonia gas using steep-switching organic field-effect transistors

Collaborator: Nazmul Hasan Naime

Supervisor: Dr. Mainul Hossain

Organic field-effect transistor (OFET) based gas sensors have attracted a lot of attention in recent years, due to their flexibility, solution processability, transparency, excellent reliability, low power consumption, and potential for use in wearable sensors for personalized health monitoring. In this work, we present a class of novel OFET-based catalytic metal gate gas sensor that can detect ammonia with high sensitivity. The signal transduction is based on the change in work function of the platinum metal gate when ammonia is absorbed on its surface. The proposed OFET consists of an organic ferroelectric layer in its gate stack. The resulting negative capacitance (NC) effect lowers the subthreshold swing and offers steep-switching characteristics, leading to enhanced sensitivity. The performance of the proposed sensor is evaluated by combining the solutions of one-dimensional (1D) Landau-Khalatnikov (L-K) equation with three-dimensional (3D) technology computer-aided (TCAD) device simulations. For a work function change of 50 meV in a double gate NC-OFET device, results show a sensitivity as high as 7.14 µA/eV, paving the way for flexible, lightweight, and highly sensitive gas sensing platforms for wearable applications.