Publications
Patent Filed:
A. Kumar and A. Dasgupta, “Ferroelectric Field Effect Transistor and Method to Perform the Multi-Bit Operation Using the Ferroelectric Field Effect Transistor,” May 2024, Indian Patent, Application No. 202411038573.
Journals:
A. Kumar, N. Mishra, A. Bulusu, S. Mehrotra, and A. Dasgupta, “Impact of Doped Hafnium Oxides on Memory Window and Low-Frequency Noise in Ferroelectric FETs,” in IEEE Transactions on Electron Devices, May 2024. [Early Access]
M. Ehteshamuddin, K. Sheelvardhan, A. Kumar, S. Guglani, S. Roy, and A. Dasgupta, “Machine Learning-Assisted Multiobjective Optimization of Sub-2nm Node Gate-All-Around Transistor for Logic and RF Applications,” in IEEE Transactions on Electron Devices, vol. 71, no. 2, pp. 976–982, Feb. 2024.
A. Kumar, M. Ehteshamuddin, A. D. Gaidhane, A. Bulusu, S. Mehrotra, and A. Dasgupta, “Universal Compact Model of Flicker Noise in Ferroelectric Logic and Memory Transistors,” in IEEE Transactions on Electron Devices, vol. 71, no. 1, pp. 18–22, Jan. 2024.
S. Sarker, A. Kumar, M. Ehteshamuddin, and A. Dasgupta, “Compact Modeling of Parasitic Capacitances in GAAFETs for Advanced Technology Nodes,” in IEEE Journal of the Electron Devices Society, vol. 11, pp. 510–517, 2023.
Conferences:
A. Kumar and A. Dasgupta, “Compact Modeling of Compound Semiconductor Memory ULTRARAM: A Universal Memory Device,” 82nd Device Research Conference (DRC), Maryland, USA, Jun. 2024.
A. K. Behera, N. Chauhan, A. Kumar, T. Rampal, S. De, A. Dasgupta, S. Dasgupta, and A. Bulusu, “Assessing the Performance of Ferroelectric Junctionless FET for NVM,” 2024 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Athens, Greece, May 2024.
A. Kumar, M. Ehteshamuddin, A. Bulusu, S. Mehrotra, and A. Dasgupta, “A Physics-based Compact Model for ULTRARAM Memory Device,” 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Bangalore, India, 2024, pp. 1-3.
A. Kumar, A. Bulusu, and A. Dasgupta, “Performance Projection of Negative Capacitance Complementary FET (NC-CFET): Device-Circuit Co-design,” 2024 8th IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Bangalore, India, 2024, pp. 1-3.
S. Sarker, A. Garg, P. Ranjan, A. Kumar, and A. Dasgupta, “Physics-Based Core Compact Model of 2D MoS2 FET Considering Fermi-Dirac Statistics,” 2024 8th IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Bangalore, India, 2024, pp. 1-3.
K. Sheelvardhan, S. Parandiyal, M. Ehteshamuddin, A. Kumar, S. Roy, and A. Dasgupta, “Neural Network augmented Physics based Hybrid Compact Model for Computational Efficiency Improvement,” 2024 8th IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Bangalore, India, 2024, pp. 1-3.
A. Kumar, A. Bulusu, S. Mehrotra, and A. Dasgupta, “A Landau Based Compact Model for Multi Domain Ferroelectric Field Effect Transistors,” International Workshop on Physics of Semiconductor Devices (IWPSD), Dec. 2023.
M. Ehteshamuddin, A. Kumar, S. Roy, and A. Dasgupta, “Optimizing Memory Window and Polarization of a Fe-CAP Using Machine Leaning Assisted Genetic Algorithm Framework,” International Workshop on Physics of Semiconductor Devices (IWPSD), Dec. 2023.
M. Shukla, M. Ehteshamuddin, A. Kumar, K. Sheelvardhan, and A. Dasgupta, “Novel Charge Partitioning Compact Model including Field-Dependent Mobility Degradation Effect for Nanoscale MOSFETs,” International Workshop on Physics of Semiconductor Devices (IWPSD), Dec. 2023.
A. Kumar, G. Pahwa, A. K. Behera, A. Bulusu, S. Mehrotra, and A. Dasgupta, “Analysis and Modeling of Flicker Noise in Ferroelectric FinFETs,” 2022 IEEE International Conference on Emerging Electronics (ICEE), Bangalore, India, 2022, pp. 1-5.
S. Manikandan, N. Chauhan, N. Bagga, A. Kumar, S. Banchhor, S. Roy, A. Bulusu, A. Dasgupta, and S. Dasgupta, “Analysis and Modeling of Leakage Currents in Stacked Gate-All-Around Nanosheet Transistors,” 2022 IEEE International Conference on Emerging Electronics (ICEE), Bangalore, India, 2022, pp. 1-4.
Invited Talks:
A. Kumar, “Ferroelectric devices for advanced memory technologies”, IEEE EDS Workshop on Devices and Circuits (WDC), Khajuraho, India, Jan. 2023.