2MBI100N-120 High speed switching Voltage drive Low inductance module structure;
Part Number: 2MBI100N-120
Category: IGBT Module
Manufacturer: Fuji
Packaging: IGBT Module
Data Code: 2019+
Qty Available: 300
#2MBI100N-120 Fuji 2MBI100N-120 New High speed switching Voltage drive Low inductance module structure, 2MBI100N-120 pictures, 2MBI100N-120 price, #2MBI100N-120 supplier
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Features
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Collector-Emitter voltage VCES 1200V
Gate-Emitter voltaga VGES ±20V
Collector Continuous IC 100A
current 1ms IC pulse 200A
Max. power dissipation PC 780W
Operating temperature Tj +150°C
Storage temperature Tstg -40 to +125°C
Zero gate voltage collector current VGE=0V, VCE=1200V
Gate-Emitter leakage current VCE=0V, VGE=±20V
Gate-Emitter threshold voltage VCE=20V, IC=100mA
Collector-Emitter saturation voltage VGE=15V, IC=100A