Our research group, based at the Tyndall Institute, UCC, is equipped with state-of-the-art resources to support both experimental and simulation-based research in nanoelectronics and 2D materials. These include:
First-principles simulation platforms
We have access to advanced first-principles simulation platforms, enabling detailed investigations into the electronic properties, transport characteristics, and device performance of 2D materials. These capabilities are supported by Tyndall’s recently upgraded large-scale computer cluster, the computational resources of the Irish Centre for High-End Computing (ICHEC), and access to the MeluXina supercomputer in Luxembourg through ICHEC.
TCAD modeling tools
We utilize advanced TCAD simulation tools to model and optimize 2D materials-based logic and memory devices. These tools enable precise simulations of MOSFETs, RRAM, and other nanoscale devices, facilitating in-depth analysis and optimization. Our work is supported by access to Tyndall’s recently upgraded large-scale computer cluster.
Fabrication facilities
We largely benefit from the state-of-the-art cleanroom environment where we fabricate 2D materials-based devices such as FETs and memristors. The facility is equipped with tools for patterning (EBL and photolithography), metal and dielectric deposition, wet and dry etching, essential for advanced device fabrication.
Characterization facilities
Wide suite of precision measurement tools for characterizing electrical, structural, chemical, and optical properties of 2D materials and fabricated devices.
These resources enable us to carry out cutting-edge research, from computational modeling and design to experimental fabrication and characterization, ensuring that our work stays at the forefront of nanoelectronics innovation.