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Title: Crystal growth behavior of AlN on Fe-Al solutions using electromagnetic levitation and computer vision technique
Keywords: Crystal growth, nitrides, thermophysical property, high temperature melts
Abstract: Aluminum nitride single crystal has a good lattice matching with AlGaN, high thermal conductivity, wide bandgap energy, high UV transparency, and high dielectric breakdown strength. Therefore, bulk AlN single crystal has a great demand for a substrate material AlGaN-based optic and electronic devices such as deep UV-LED and high-power transistors. In Prof. Fukuyama group at Tohoku University, solution growth methods of AlN crystal using Al-contained binary alloys have been developed. To understand the growth behavior and design an optimum growth technique, an in-situ observation system for solution growth of AlN crystal using electromagnetic levitation has been developed. In this system, crystal formation behavior is recorded using high-speed camera. To consider the optimum condition of AlN growth, quantitative data is strongly beneficial. From this demand, an international and interdisciplinary research project between Prof. Fukuyama group at Tohoku University and Prof. French group at Case Western Reserve University started. In this project, the driving force of AlN crystal growth in Ni-Al solutions have been evaluated based on thermodynamics, and the relationship between the driving force and AlN growth behavior was studied using our original in-situ observation system. Recently, we are focusing on the Fe-Al system as a solution for the AlN growth. The AlN growth behavior in the Fe-Al solution has been investigated using the original in-situ observation system. The recent results of the in-situ observation of AlN crystals in the Fe-Al solution will be presented in this symposium.
