MPL specializes primarily in the growth, characterization and modeling of heterostructures made with semiconducting materials such as Hg-based semiconducting alloys and/or superlattices deposited on GaAs or Si substrates, ZnSe and related wide gap II-VI materials and III-V semiconducting materials.
Prominent areas of research at present are:
Growth of epilayers and heterostructures using Molecular Beam Epitaxy (MBE).
Heteroepitaxy of dissimilar materials.
Structural and electrical properties.
in-situ surface physics experiments.
Electronic properties of two dimensional systems.
Electronic devices such as photodiodes, MIS structures and infrared lasers.
Device modeling.
Optical characterization using modulation spectroscopic techniques.
Theoretical investigation of the electronic structure of the semiconductor heterostructures.