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SiC Power Semiconductors: Device Technology and Potential for Power Electronics and Energy Systems
SiC Power Semiconductors: Device Technology and Potential for Power Electronics and Energy Systems
Abstract
The escalating demand for energy efficiency, miniaturization, and robustness in power systems has significantly propelled the development of silicon carbide (SiC)-based technologies. In Brazil, the federal government invested 220 million Brazilian Reais in 2025 to adapt CEITEC for the development of SiC chips, making it the country’s most relevant electronic semiconductor device technology. This presentation offers a comprehensive overview of the evolution of SiC power semiconductors, with a focus on advancements in devices such as SiC MOSFETs and Schottky diodes. It will also cover the associated fabrication techniques and reliability challenges that come with these devices. Furthermore, the presentation explores the impact of this technology on energy conversion efficiency across various power electronics applications, emphasizing its growing relevance in modern systems. The discussion concludes with a prospective analysis of SiC technology’s potential for Brazil, highlighting recent scientific achievements in this field within the country.
Biography - Dr. Renato A. Minamisawa
Dr. Renato A. Minamisawa is a Professor at the School of Engineering and Environment at the University of Applied Sciences and Arts of Northwestern Switzerland (FHNW), where he leads the Digital Power Systems laboratory. He holds a Bachelor's degree in Medical Physics from the University of São Paulo (2005), a Master’s degree in Physics from Alabama A&M University (2008), and a Ph.D. in Physics from RWTH Aachen University, Germany. His doctoral research at Forschungszentrum Jülich focused on the development of CMOS devices with strained silicon channels. He later served as a scientist at the Paul Scherrer Institute in Switzerland, working on nanoelectronics and photonics. He subsequently joined the ABB Corporate Research Center as a technology manager, leading initiatives in SiC power semiconductor development. Dr. Minamisawa has authored over 100 international publications and holds 60 patents in the field of power semiconductors. His work spans both academic and industrial environments, integrating advanced device physics with real-world energy system applications.
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