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Evolution of Dielectrics from Field Effect Transistors to Nano-Systems
Evolution of Dielectrics from Field Effect Transistors to Nano-Systems
Abstract 1
IEEE Electron Device Society is celebrating 100 years of the Field Effect Transistor (FET) in 2025. The first Canadian patent was filed by Julius Lilienfeld on 22 October 1925. During the past century, there were phenomenal developments and innovations of the FET that contributed to many applications, including computing and communications. The contribution of dielectrics to FETs’ development is highly significant. Historically, SiO₂ was the main driver of MOSFETs as the transistor’s gate dielectric. Once the thickness of SiO₂ reached the onset of the direct tunneling region (<1.5 nm), HfO₂-based high-k insulators were introduced to suppress the direct-tunneling leakage current. The transistor has transformed from a planar device to a three-dimensional device to a gate-all-around device. Several applications of high-k dielectrics have emerged, including ferroelectric FETs and resistive random-access memory (RRAM) devices that are being investigated for the possible implementation of artificial intelligence hardware. The electrical performance in these devices depends on the dielectric deposition process, precise selection of deposition parameters, pre-deposition surface treatments, and subsequent thermal budget. The talk will outline the role of dielectrics from FETs to modern nanoelectronics devices.
Biography – Prof. Durga Misra, Ph.D., IEEE Fellow, ECS Fellow
Prof. Durga Misra is a Professor and Chair of the Department of Electrical and Computer Engineering at the New Jersey Institute of Technology (NJIT), Newark, USA. He received his M.S. and Ph.D. degrees in Electrical Engineering from the University of Waterloo, Canada, in 1985 and 1988, respectively. His research focuses on nanoelectronic devices and circuits, with particular expertise in CMOS gate stacks and energy-efficient switching devices. Prof. Misra has published over 200 peer-reviewed journal and conference papers and has delivered more than 100 invited talks worldwide. He has also edited or co-edited over 50 technical books and conference proceedings. A Fellow of IEEE and the Electrochemical Society (ECS), he serves as a Distinguished Lecturer of the IEEE Electron Devices Society. He is a recipient of the ECS Thomas Collinan Award from the Dielectric Science & Technology Division and the ECS Electronic and Photonic Division Award.nProf. Misra has mentored more than 20 Ph.D. and 55 M.S. students. His work has significantly contributed to the understanding and engineering of dielectric materials in advanced transistor technologies and AI-enabling hardware.
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