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Celebrating 100 Years of FETs: The Journey of High-k Materials from Research to High Volume Manufacturing an Industry Perspective
Celebrating 100 Years of FETs: The Journey of High-k Materials from Research to High Volume Manufacturing an Industry Perspective
Abstract
For the past 50 years, the semiconductor industry has enjoyed tremendous growth largely due to transistor dimensional scaling. However, in recent years, the growth in industry has come from new applications driven by data and connectedness such as IoT, 5G and AI. The focus of research has broadened from finding new materials to continue dimensional scaling to searching the right material for new applications. As HfO 2 high-k material is well established as a fab friendly material, the industry is motivated to find more uses of HfO2. In this presentation, we will discuss the applications of HfO2 as ferroelectric films for AI applications focusing on current progress and challenges in manufacturing implementation.
Biography - Dr. Dina Triyoso
Dina is a Technologist & Senior Member of Technical Staff at TEL Technology Center, America, LLC. She received her PhD in Chemical Engineering from Texas A&M University. Prior to joining Tokyo Electron in 2019, she spent 18 years at Motorola/Freescale and GLOBALFOUNDRIES working on process and integration of new materials in CMOS (planar, FINFET and FDSOI). Her current research is focused on new materials and new process technologies for future logic and memory devices. Dina has 38 issued US patents and over 150 publications. She is an IEEE Fellow and has served as the 2023 IEDM General Chair.
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