Presentation - Reliability Challenges of Emerging MOSFET Devices
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Abstract
The transistor of today has no similarities with the one invented by Shockley in the 40’s and very few common features with CMOS invented in the 60’s. The technology of nowadays, that is powering the AI and green energy revolutions, is based on numerous materials and allows discovered recently and on complicated 3D integration schemes. A fundamental (and quite) enabler of the exponential computational power increase of last century is the reliability study of such devices. Upon detailed understandings of the device degradation physics, engineers can not only predict the device lifetime but improve it so that the transition to new technology nodes happens seamlessly. This talk will give an overview of the reliability challenges of emerging MOSFET devices and how they can be exploited to create new products such as odometers and physically unclonable functions (PUFs).
Biography - Dr. Adrian Chasin
Adrian Chasin is a Principal Member of Technical Staff (PMTS) and the R&D team leader of the FEOL Reliability team at imec. He is involved in several logic/memory projects ranging from advanced devices architectures through new memory concepts to use of non-conventional semiconducting materials. He received the PhD in Electrical Engineering from the University of Leuven in 2014, when he developed devices based on new semiconducting oxides for display and flexible electronics targeting RF applications. After working at NXP on modelling/evaluation of CMOS technologies, he joined the imec reliability group in 2015 as a researcher. His main research interests are FEOL/MOL reliability in advanced CMOS technologies and thin-film devices for memory and BEOL applications. He authored and co-authored more than 150 publications.
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