ISiC Power Semiconductors: Device Technology and Potential for Power Electronics and Energy Systems

Abstract

The escalating demand for energy efficiency, miniaturization, and robustness in power systems has significantly propelled the development of silicon carbide (SiC)-based technologies. In Brazil, the federal government invested 220 million Brazilian Reais in 2025 to adapt CEITEC for the development of SiC chips, making it the country's most relevant electronic semiconductor device technology. This presentation offers a comprehensive overview of the evolution of SiC power semiconductors, with a focus on advancements in devices such as SiC MOSFETs and Schottky diodes. It will also cover the associated fabrication techniques and reliability challenges. Furthermore, the presentation explores the impact of this technology on energy conversion efficiency across various power electronics applications. The discussion concludes with a prospective analysis of SiC technology's potential for Brazil, highlighting recent scientific achievements in this field within the country.

Bio

Dr. Renato A. Minamisawa holds a Bachelor's degree in Medical Physics from the University of São Paulo, awarded in 2005. He earned his Master's degree in Physics from Alabama A&M University in 2008 and completed his Ph.D. in Physics at RWTH Aachen University, Germany. His doctoral research at Forschungszentrum Jülich focused on the development of CMOS devices with strained silicon channels. Subsequently, he served as a scientist at the Paul Scherrer Institute in Switzerland, specializing in nanoelectronics and photonics. Following this, he worked as a technology manager for SiC power semiconductor development at the ABB Corporate Research Center in Switzerland. Currently, he is a professor at the School of Engineering and Environment at the University of Applied Sciences and Arts of Northwestern Switzerland (FHNW), where he leads the Digital Power Systems laboratory. He has authored over 100 international publications and holds 60 patents in the field of power semiconductors.