25. Dae Seon Kwon*, Jasper Bizindavyi, Pradyumna Kumar Parida, Gourab De, Hyun-Cheol Kim, Olivier Richard, Paola Favia, Attilio Belmonte, Annelies Delabie, Laura Nyns, Gouri Sankar Kar, Jan Van Houdt, and Mihaela Ioana Popovici*
"Seed layer effect on the phase evolution of the La-doped hafnium zirconium oxide with back-end-of-line compatibility"
Applied Surface Science, 717, 164786-164797 (2026), Link
24. Heewon Paik, Dohyun Kim, Junil Lim, Haengha Seo, Tae Kyun Kim, Jonghoon Shin, Haewon Song, Hansub Yoon, Dae Seon Kwon, Dong Gun Kim, Jung-Hae Choi, and Cheol Seong Hwang*
"The leakage current suppression mechanism in a RuO2/SrTiO3/Ru capacitor induced by introduction of an ultra-thin GeO2 interfacial layer at the bottom interface"
Journal of Materials Chemistry C, 13, 21347-21356 (2025), Link
23. Tae Kyun Kim, Haengha Seo, Junil Lim, Heewon Paik, Jonghoon Shin, Haewon Song, Dae Seon Kwon*, and Cheol Seong Hwang*
"Effect of Yttrium Feeding Time on the Electrical and Structural Properties of Atomic Layer Deposited Y-doped TiO2 Films for Dynamic Random-Access Memory Capacitor"
Journal of Materials Chemistry C, 13, 16969-16980 (2025), Link
22. Heewon Paik, Junil Lim, Haengha Seo, Tae Kyun Kim, Jonghoon Shin, Haewon Song, Dong Gun Kim, Woongkyu Lee, Dae Seon Kwon*, and Cheol Seong Hwang*
"Enhanced Crystallization and Dielectric Properties of Atomic Layer Deposited SrTiO3 Thin Films on Ru Electrode by Inserting GeO2 Interfacial Layer"
Materials Horizons, 12, 7305-7317 (2025), Link
21. Gourab De*, Mihaela Ioana Popovici, Shankha Mukherjee, Dae Seon Kwon, Federica Luciano, Tony Murphy, Gouri Sankar Kar, Annelies Delabie, and Jan Van Houdt
"Investigation of the role of in-plane stress behavior on ferroelectric properties of scaled-up hafnium zirconium oxide superlattices"
Nanoscale, 17, 10006-10012 (2025), Link
20. Hyun-Cheol Kim*, Mihaela Ioana Popovici, Javier Herrero-Martin, Johan Meersschaut, Harold Dekkers, Dae Seon Kwon, and Jan Van Houdt
"Soft X-Ray Absorption Spectroscopy Investigation of HfO2 and ZrO2 Thin Films with Modulated Crystalline Phase by Varying Dopants (Al, Si, Gd) for Ferroelectric and High-k Dielectric Applications"
physica status solidi (RRL)-Rapid Research Letters, 2400385-2400391 (2025), Link
19. Luigi Colombo*, Salim El Kazzi, Mihaela Popovici, Gilles Delie, Dae Seon Kwon, Sean RC McMitchell, and Christoph Adelmann
"Future materials for beyond Si integrated circuits: a Perspective"
IEEE Transactions on Materials for Electron Devices, 1, 178-193 (2024), Link
18. Dae Seon Kwon*, Jasper Bizindavyi, Gourab De, Attilio Belmonte, Annelies Delabie, Laura Nyns, Gouri Sankar Kar, Jan Van Houdt, and Mihaela Ioana Popovici
"Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line Compatibility"
ACS Applied Materials and Interfaces, 16(31), 41704-41715 (2024), Link
17. Jonghoon Shin, Haengha Seo, Kun Hee Ye, Yoon Ho Jang, Dae Seon Kwon, Junil Lim, Tae Kyun Kim, Heewon Paik, Haewon Song, Ha Ni Kim, Seungyong Byun, Seong Jae Shin, Kyung Do Kim, Yong Bin Lee, In Soo Lee, Jung-Hae Choi, and Cheol Seong Hwang*
“Understanding phase evolution of ferroelectric Hf0.5Zr0.5O2 thin films with Al2O3 and Y2O3 inserted layers”
Journal of Materials Chemistry C, 12, 5035-5046 (2024), Link
16. Haewon Song, Bowen Wang, Jonghoon Shin, Yu-Kyung Park, Tae Kyun Kim, Heewon Paik, Haengha Seo, Junil Lim, Dae Seon Kwon, Keonuk Lee, Young Sin Kim, Dong Hoon Shin, and Cheol Seong Hwang*
“Improved electrical performance of ultra-thin BexMg1-xO films using super-cycle atomic layer deposition”
Journal of Materials Chemistry C, 12, 2714-2722 (2024), Link
15. Junil Lim, Kun Hee Ye, Dae Seon Kwon, Haengha Seo, Tae Kyun Kim, Heewon Paik, Jonghoon Shin, Haewon Song, Yoon Ho Jang, Sukin Kang, Jung-Hae Choi*, and Cheol Seong Hwang*
“Enhancing the Crystallization and Properties of the SrRuO3 Electrode Film Grown by Atomic-Layer-Deposited SrO and Pulsed-Chemical Vapor-Deposited RuO2 through Al Substitution”
ACS Applied Electronic Materials, 5(8), 4187-4197 (2023), Link
14. Junil Lim, Dae Seon Kwon, Haengha Seo, Tae Kyun Kim, Heewon Paik, Jonghoon Shin, Haewon Song, Yoon Ho Jang, Yu-Kyung Park, Keonuk Lee, Young Sin Kim, Jung-Hae Choi*, and Cheol Seong Hwang*
“Improving the Properties of SrRuO3 Electrode Films Grown by Atomic Layer-Deposited SrO and Pulsed Chemical Vapor-Deposited RuO2 Using Al2O3 Capping Layers”
ACS Applied Electronic Materials, 5(8), 4494-4503 (2023), Link
13. Dae Seon Kwon, Tae Kyun Kim, Junil Lim, Haengha Seo, Heewon Paik, and Cheol Seong Hwang*
“Enhanced Electrical Properties of Al-doped TiO2 Dielectric Film on the TiN Electrode by Adopting Atomic Layer Deposited Ru Interlayer”
ACS Applied Electronic Materials, 4(4), 2005-2014 (2022), Link
12. Haengha Seo, In Won Yeu, Dae Seon Kwon, Dong Gun Kim, Junil Lim, Tae Kyun Kim, Heewon Paik, Jung-Hae Choi, and Cheol Seong Hwang*
“The Contrasting Impacts of the Al2O3 and Y2O3 Insertion Layers on the Crystallization of ZrO2 Films for Dynamic Random Access Memory Capacitors”
Advanced Electronic Materials, 8(7), 2200099-2200117 (2022), Link
11. Dae Seon Kwon, Woojin Jeon, Dong Gun Kim, Tae Kyun Kim, Haengha Seo, Junil Lim, and Cheol Seong Hwang*
“Improved Properties of the Atomic Layer Deposited Ru Electrode for Dynamic Random-Access Memory Capacitor Using Discrete Feeding Method”
ACS Applied Materials and Interfaces, 13(20), 23915-23927 (2021), Link
10. Dong Gun Kim, Hae-Ryoung Kim, Dae Seon Kwon, Junil Lim, Haengha Seo, Tae Kyun Kim, Heewon Paik, Woongkyu Lee* and Cheol Seong Hwang*
“Comparison of High-k Y2O3/TiO2 Bilayer and Y-doped TiO2 Thin Films on Ge Substrate”
Journal of Physics D: Applied Physics, 54(18), 185110 (2021), Link
9. Dong Gun Kim, Dae Seon Kwon, Junil Lim, Haengha Seo, Tae Kyun Kim, Woongkyu Lee* and Cheol Seong Hwang*
“Trap Reduction through O3 Post‐Deposition Treatment of Y2O3 Thin Films Grown by Atomic Layer Deposition on Ge Substrates”
Advanced Electronic Materials, 7(2), 2000819-2000829 (2021), Link
8. Dong Gun Kim, Cheol Hyun An, Sang Hyeon Kim, Dae Seon Kwon, Junil Lim, Woojin Jeon* and Cheol Seong Hwang*
“Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate”
Journal of Materials Chemistry C, 9(5), 1572-1583 (2021), Link
7. Dae Seon Kwon, Cheol Hyun An, Sang Hyeon Kim, Dong Gun Kim, Junil Lim, Woojin Jeon*, and Cheol Seong Hwang*
“Atomic Layer Deposition of Ru Thin Films Using (2,4-dimethyloxopentadienyl)(ethylcyclopentadienyl)Ru and the Effect of Ammonia Treatment during the Deposition”
Journal of Materials Chemistry C, 8(21), 6993-7004 (2020), Selected as a Back cover, Link
6. Cheol Hyun An, Woojin Jeon, Sang Hyeon Kim, Cheol Jin Cho, Dae Seon Kwon, Dong Gun Kim, Woongkyu Lee*, and Cheol Seong Hwang*
“Substrate Effects on the Growth Behavior of Atomic-Layer-Deposited Ru Thin Films Using RuO4 Precursor and N2/H2 Mixed Gas”
The Journal of Physical Chemistry C, 123(36), 22539-22549 (2019), Link
5. Sang Hyeon Kim, Woongkyu Lee, Cheol Hyun An, Yumin Kim, Dae Seon Kwon, Dong-Gun Kim, Soon Hyung Cha, Seong Tak Cho, Junil Lim, and Cheol Seong Hwang*
“Leakage Current Control of SrTiO3 Thin Films through Al Doping at the Interface between Dielectric and Electrode Layers via Atomic Layer Deposition”
physica status solidi (RRL)–Rapid Research Letters, 13(11), 1900373 (2019), Link
4. Soon Hyung Cha, Cheol Hyun An, Seong Tak Cho, Dong-Gun Kim, Dae Seon Kwon, Jun Il Lim, Woojin Jeon*, and Cheol Seong Hwang*
“Scaling the Equivalent Oxide Thickness by Employing a TiO2 Thin Film on a ZrO2–Al2O3-Based Dielectric for Further Scaling of Dynamic Random Access Memory”
physica status solidi (RRL)-Rapid Research Letters, 13(10), 1900282 (2019), Link
3. Sang Hyeon Kim, Woongkyu Lee, Cheol Hyun An, Dong-Gun Kim, Dae Seon Kwon, Seong Tak Cho, Soon Hyung Cha, Jun Il Lim, and Cheol Seong Hwang*
“Effect of the Annealing Temperature of the Seed Layer on the Following Main Layer in Atomic-Layer-Deposited SrTiO3 Thin Films”
physica status solidi (RRL)-Rapid Research Letters, 13(5), 1800557 (2019), Link
2. Cheol Hyun An, Woongkyu Lee, Sang Hyeon Kim, Cheol Jin Cho, Dong-Gun Kim, Dae Seon Kwon, Seong Tak Cho, Soon Hyung Cha, Jun Il Lim, Woojin Jeon*, and Cheol Seong Hwang*
“Controlling the Electrical Characteristics of ZrO2/Al2O3/ZrO2 Capacitors by Adopting a Ru Top Electrode Grown via Atomic Layer Deposition”
physica status solidi (RRL)-Rapid Research Letters, 13(3), 1800454 (2019), Link
1. Sang Hyeon Kim, Woongkyu Lee, Cheol Hyun An, Dae Seon Kwon, Dong-Gun Kim, Soon Hyung Cha, Cheol Seong Hwang*
“Effect of Growth Temperature During the Atomic Layer Deposition of the SrTiO3 Seed Layer on the Properties of RuO2/SrTiO3/Ru Capacitors for Dynamic Random Access Memory Applications”
ACS Applied Materials and Interfaces, 10(48), 41544-41551 (2018), Link