Conference proceedings

2014

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1. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol and Siddharth Rajan, "Design of Ga-polar low resistance polarization engineered GaN/InGaN tunnel junctions", 56th Electronic Materials Conference, UCSB, Santa Barbara (Jun. 25 – 27, 2014).
2. Z. C. Yang, D. N. Nath, Y. W. Zhang and S. Rajan, “Tunneling hot electron transfer amplifier based on N-polar AlGaN/GaN heterostructures”, 72nd Device Research Conference, UCSB, Santa Barbara (Jun. 22 – 25, 2014).
3. Z. C. Yang, D. N. Nath, Y. Zhang and S. Rajan, “Common Emitter Current and Voltage Gain in III-Nitride Tunneling Hot Electron Transistors”, LEC, Cornell University, Ithaca (Aug. 5 – 8, 2014).

2015

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4. Sriram Krishnamoorthy, Yuewei Zhang, Jared M Johnson, Fatih Akyol, Andrew Allerman, Michael W Moseley, Andrew Armstrong, Jinwoo Hwang, Siddharth Rajan," UV Tunnel Junction LEDs" WOCSEMMAD 2015 (Workshop on Compound Semiconductor Materials and Devices) February 16-19, 2015.

5. Zhichao Yang, Yuewei Zhang, Digbijoy N. Nath, Jacob B. Khurgin and Siddharth Rajan, “GaN Tunneling Hot Electron Transistors with Common Emitter Current Gain”, WOCSEMMAD 2015 (Workshop on Compound Semiconductor Materials and Devices) February 16-19, 2015.

6. Zhichao Yang, Yuewei Zhang, Sriram Krishnamoorthy, Digbijoy N. Nath, Jacob B. Khurgin, and Siddharth Rajan, "Modeling and Experimental Demonstration of Sub-10 nm Base III-Nitride Tunneling Hot Electron Transistors", 73rd Device Research Conference (DRC), June 21-24, 2015.

7. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sadia Khandaker Monika, Andrew Allerman, Michael W. Moseley, Andrew Armstrong, and Siddharth Rajan, "Sub 300 nm Wavelength III-Nitride Tunnel-Injected Ultraviolet LEDs", 73rd Device Research Conference (DRC), June 21-24, 2015.

8. Zhichao Yang, Yuewei Zhang, Sriram Krishnamoorthy, Digbijoy N. Nath, Jacob B. Khurgin, and Siddharth Rajan, “GaN Tunneling Hot Electron Transistors with Common Emitter Current Gain”, 57th Electronic Materials Conference June 24 - 26, 2015.

9. Yuewei Zhang, Sriram Krishnamoorthy, Jared M. Johnson, Fatih Akyol, Andrew Allerman, Michael W. Moseley, Andrew Armstrong, Jinwoo Hwang and Siddharth Rajan, "Tunneling Injection of Holes in III-Nitride Ultraviolet Emitters ", 57th Electronic Materials Conference June 24 - 26, 2015.

10. Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang and Siddharth Rajan, "3-Junction GaN Bipolar Cascade LEDs with Low On-Resistance", 57th Electronic Materials Conference June 24 - 26, 2015.

11. (Invited) Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol and Siddharth Rajan, "Tunnel Junctions for III-Nitride Ultraviolet Optoelectronics", 42nd International Symposium on Compound Semiconductors June 28-July 2, 2015 University of California, Santa Barbara, CA, 2015.

12. Zhichao Yang, Yuewei Zhang, Digbijoy N. Nath, Jacob B. Khurgin, and Siddharth Rajan, “Design and Demonstration of GaN Tunneling Hot Electron Transistors”, 42nd International Symposium on Compound Semiconductors June 28-July 2, 2015 University of California, Santa Barbara, CA, 2015.

13. Zhichao Yang, Yuewei Zhang, Sriram Krishnamoorthy, Digbijoy N. Nath, Jacob B. Khurgin, and Siddharth Rajan, “Quasi-ballistic transport in AlGaN/GaN tunneling hot electron transistors”, 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China (August 30th - September 4th, 2015).

14. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sadia Khandaker Monika, Andrew Allerman, Michael W. Moseley, Andrew Armstrong, and Siddharth Rajan, “Polarization engineered Al0.55Ga0.45N tunnel junctions for ultraviolet emitters”, 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China (August 30th - September 4th, 2015).

2016

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15. Sanyam Bajaj, Fatih Akyol , Sriram Krishnamoorthy, Yuewei Zhang, Andrew Armstrong, Andrew Allerman and Siddharth Rajan， “Ultra-Wide Bandgap AiGaN Channel MISFET with Polarization Engineered Ohmics”, 74th Device Research Conference (DRC), June 19-22, 2016 Newark, Delaware.

16. Zhichao Yang, Yuewei Zhang, Sriram Krishnamoorthy, Digbijoy N. Nath, Jacob B. Khurgin, and Siddharth Rajan, "Current Gain above 10 in sub-10 nm Base III-Nitride Tunneling Hot Electron Transistors with GaN/AlN Emitter", 74th Device Research Conference (DRC), June 19-22, 2016 Newark, Delaware.

17. Sriram Krishnamoorthy, Edwin Lee, Choong Hee Lee, William McCulloch, Yuewei Zhang, Jared Johnson, Lu Ma, Jinwoo Hwang, Yiying Wu and Siddharth Rajan, "High Current Density p-MoS2/n-GaN Inter-Band 2D/3D Tunnel Junctions", 58th Electronic Materials Conference (EMC), June 22 - 24, 2016.

18. Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang, Jared Johnson, Jinwoo Hwang and Siddharth Rajan, "Ultra-Low Resistance GaN Tunnel Homojunctions with Repeatable Differential Resistance and 150 kA/cm2 Current", 58th Electronic Materials Conference (EMC), June 22 - 24, 2016.

19. Sanyam Bajaj, Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang, Andrew Armstrong, Andrew Allerman and Siddharth Rajan, "Heterostructure Engineered Ohmic Contacts to Ultra-Wide Bandgap AlGaN", 58th Electronic Materials Conference (EMC), June 22 - 24, 2016.

20. Siddharth RAJAN, Yuewei ZHANG, Fatih AKYOL, Sriram KRISHNAMOORTHY, "Tunnel Junctions for Next-Generation Visible and UV Optoelectronics", International Union of Materials Research Societies - International Conference on Electronic Materials (IUMRS-ICEM 2016), July 04 - 08, 2016, Suntec Singapore.

21. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Zane Jamal-Eddine, Andrew Allerman, Michael W. Moseley, Andrew Armstrong, and Siddharth Rajan, "Graded P-AlGaN Superlattice for Reduced Electron Overflow in Tunneling Injected UVC LEDs", 2016 Lester Eastman Conference on High Performance Devices, August 2 - 4, 2016, Bethelehem PA.

22. Zhichao Yang, Yuewei Zhang, Sriram Krishnamoorthy, Digbijoy N. Nath, Jacob B. Khurgin, and Siddharth Rajan, "Current Gain above 10 in III-Nitride Tunneling Hot Electron Transistors", 2016 Lester Eastman Conference on High Performance Devices, August 2 - 4, 2016, Bethelehem PA.

23. S. Bajaj, F. Akyol, Y. Zhang, S. Krishnamoorthy, A. Armstrong, A. Allerman and S. Rajan, "Heterostructure-Engineered Ohmics-based UBWG Al0.75Ga0.25N Channel MISFET", 2016 Lester Eastman Conference on High Performance Devices, August 2 - 4, 2016, Bethelehem PA.

24. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Zane Jamal-Eddine, Andrew Allerman, Michael Moseley, Andrew Armstrong and Siddharth Rajan, "Engineering of Hole Transport in Tunneling Injected UV-A LEDs", International Workshop on Nitride Semiconductors (IWN 2016), October 2-7, 2016, Orlando, Florida.

25. Sanyam Bajaj, Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang, Andrew Armstrong, Andrew Allerman and Siddharth Rajan, "Ultra-Wide Bandgap AlGaN Channel MISFET with Low-Resistance Ohmics", International Workshop on Nitride Semiconductors (IWN 2016), October 2-7, 2016, Orlando, Florida.

26. Zhichao Yang, Yuewei Zhang, Sriram Krishnamoorthy, Digbijoy N. Nath, Jacob B. Khurgin2 and Siddharth Rajan, "III-Nitride Tunneling Hot Electron Transistors with Current Gain above 10", International Workshop on Nitride Semiconductors (IWN 2016), October 2-7, 2016, Orlando, Florida.

27. Sriram Krishnamoorthy, Yuewei Zhang, Edwin Lee, Choong Hee Lee, William D. McCulloch, Jared M. Johnson, Jinwoo Hwang, Yiying Wu and Siddharth Rajan, "Modeling and Demonstration of High Current MoS2/GaN Interband Tunnel Junctions", International Workshop on Nitride Semiconductors (IWN 2016), October 2-7, 2016, Orlando, Florida.

28. Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang, Siddharth Rajan, "Ultra-Low Resistance GaN/InGaN/GaN Tunnel Junctions with Indium Content < 15%", International Workshop on Nitride Semiconductors (IWN 2016), October 2-7, 2016, Orlando, Florida.