Dr. Yen-Kai Lin (林彥愷) was born in Tainan (台南), Taiwan (台灣), on September 28, 1990. He received B.S. degree in Physics (highest honor) and M.S. degree in Electronics Engineering from National Taiwan University (NTU) in 2013 and 2014 respectively, and Ph.D. degree in Electrical Engineering and Computer Sciences from University of California, Berkeley (UC Berkeley) in 2019. He is a IEEE Member. 

His research interest includes semiconductor device simulations/modeling and circuit design. From 2013 to 2014 at NTU, he was involved in physics and design of the silicon-based MOS devices with ultrathin oxides for temperature sensor and photodiode applications. After one-year military service, he joined BSIM Group and Berkeley Device Modeling Center (BDMC) at UC Berkeley from 2015 to 2019, to develop the industry-standard BSIM compact models for MOSFETs/UTB-SOI/FinFETs/LDMOS/TFETs/NCFETs/STTMTJ-MRAM aiming to the logic/analog/RF/memory circuit applications. From 2019 to 2021, he joined Samsung Semiconductor in San Jose to develop compact models and circuit benchmark for MBCFET and NCFET, and to build up neuromorphic computing infrastructure (memory compact models, peripheral circuit blocks, python-based software-hardware co-design). Since 2021, he has been with Apple in Cupertino, where he led the panel end-to-end circuit modeling from electrics to optics and currently he focuses on SRAM circuit design using advanced silicon technology. He has authored/co-authored more than 40 peer-reviewed journal/conference papers with citations > 900 as of 2023/12 (please refer to Publications).

He serves as a reviewer of IEEE Transactions on Electron Devices (on the lists of golden reviewers since 2017), IEEE Electron Device Letters (on the lists of golden reviewers since 2021), IEEE Journal of the Electron Devices Society, IEEE Transactions on Nanotechnology, IEEE Photonics Technology Letters, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control (TUFFC), Journal of Applied Physics, IEEE Access, and ECS Journal of Solid State Science and Technology.